Patent US5316795A successfully refreshed from Google Patents.
US5316795A
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Halogen-assisted chemical vapor deposition of diamond
Assignee: Houston Advanced Research Center
•
Filing: 1991-05-07
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Granted: 1994-05-31
•
Expires: 2011-05-07
Abstract
Abstract The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen, (3) a halogen and, preferably, (4) a chalcogen through a reactor over the substrate material. The reactant gases may be premixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pretreatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.
Inventors
- 👤 Donald E. Patterson
- 👤 Robert H. Hauge
- 👤 C. Judith Chu
- 👤 John L. Margrave
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:14
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/26; C23C16/27; C23C16/277; Y; Y10; Y10S; Y10S427/00; Y10S427/103; Y10T; Y10T428/00; Y10T428/30
Claims Analysis
Total Claims: 99
Claim 1
Independent Claim
86 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture at a temperature of from about 250° C. to about 750° C. but without pretreatment for activation of said gas mixture to a high energy level, over a substrate heated to a temperature of from about 250° C. to about 750° C., so as to deposit diamond on at least a portion of said substrate.
Claim 2
Independent Claim
86 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture at a temperature of from about 250° C. to about 750° C. but without pretreatment for activation of said gas mixture to a high energy level, over a substrate heated to a temperature of from about 250° C. to about 750° C., so as to deposit diamond on at least a portion of said substrate.
Claim 3
Dependent Claim
14 words
The method according to claim 1 wherein said gas mixture comprises additionally a chalcogen.
Claim 4
Dependent Claim
19 words
The method according to claim 2 wherein said chalcogen is selected from the group consisting of oxygen and sulfur.
Claim 5
Dependent Claim
25 words
The method according to claim 1 wherein said halogen in said halogen-containing species is selected from the group consisting of fluorine, chlorine, bromine and iodine.
Claim 6
Dependent Claim
28 words
The method according to claim 1 wherein said gas mixture comprises a chlorofluorocarbon, a hydrogen-containing species and a chalcogen selected from the group consisting of oxygen and sulfur.
Claim 7
Dependent Claim
28 words
The method according to claim 1 wherein said gas mixture comprises a halohydrocarbon, a hydrogen-containing species and a chalcogen selected from the group consisting of oxygen and sulfur.
Claim 8
Dependent Claim
21 words
The method according to claim 1 wherein said gas mixture comprises less than approximately 10% by volume of said carbon-containing species.
Claim 9
Dependent Claim
18 words
The method according to claim 1 wherein said gas mixture contains more atoms of hydrogen than of carbon.
Claim 10
Dependent Claim
24 words
The method according to claim 8 wherein said gas mixture contains approximately at least four times as many atoms of hydrogen as of carbon.
Claim 11
Dependent Claim
30 words
The method according to claim 1 wherein said gas mixture comprises additionally an inert gas selected from the group consisting of helium, neon, argon, krypton, xenon, carbon monoxide and nitrogen.
Claim 12
Dependent Claim
25 words
The method according to claim 1 wherein said gas mixture flowing over said substrate is at from about one-half to about several atmospheres of pressure.
Claim 13
Dependent Claim
31 words
The method according to claim 1 wherein said substrate is suspended in said gas mixture flowing through said reactor, whereby all sides of said substrate are exposed to said gas mixture.
Claim 14
Dependent Claim
36 words
The method according to claim 1 comprising additionally the step of rubbing at least a portion of the surface of said substrate with a fine polishing grit prior to flowing said gas mixture over said substrate.
Claim 15
Dependent Claim
13 words
The method according to claim 13 wherein said grit comprises a diamond grit.
Claim 16
Dependent Claim
14 words
The method according to claim 1 wherein said diamond comprises a polycrystalline diamond film.
Claim 17
Dependent Claim
12 words
The method according to claim 1 wherein said diamond comprises diamond particles.
Claim 18
Independent Claim
64 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen containing-species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture without pre-treatment for activation of said gas mixture to a high energy level, over a substrate so as to deposit said diamond on at least a portion of said substrate.
Claim 19
Independent Claim
64 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen containing-species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture without pre-treatment for activation of said gas mixture to a high energy level, over a substrate so as to deposit said diamond on at least a portion of said substrate.
Claim 20
Dependent Claim
25 words
The method according to claim 17 wherein said halogen in said halogen-containing species is selected from the group consisting of fluorine, chlorine, bromine and iodine.
Claim 21
Dependent Claim
23 words
The method according to claim 17 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 22
Dependent Claim
21 words
The method according to claim 17 wherein said gas mixture comprises less than approximately 10% by volume of said carbon-containing species.
Claim 23
Dependent Claim
18 words
The method according to claim 17 wherein said gas mixture contains more atoms of hydrogen than of carbon.
Claim 24
Dependent Claim
24 words
The method according to claim 21 wherein said gas mixture contains approximately at least four times as many atoms of hydrogen as of carbon.
Claim 25
Dependent Claim
25 words
The method according to claim 15 wherein said gas mixture flowing over said substrate is at from about one-half to about several atmospheres of pressure.
Claim 26
Dependent Claim
26 words
The method according to claim 17 wherein said substrate is heated to a temperature in the range of from about 250° C. to about 750° C.
Claim 27
Dependent Claim
65 words
The method according to claim 17 wherein said gas mixture flowing over said substrate is heated to a first temperature of from about 400° C. to about 920° C., is cooled to a second temperature of from about 250° C. to about 750° C. and is flowed over said substrate with at least a portion of said substrate being heated to approximately said second temperature.
Claim 28
Dependent Claim
14 words
The method according to claim 17 wherein said diamond comprises a polycrystalline diamond film.
Claim 29
Dependent Claim
12 words
The method according to claim 17 wherein said diamond comprises diamond particles.
Claim 30
Independent Claim
105 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; heating said gas mixture to a first temperature of from about 400° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture over a substrate, at least a portion of said substrate being heated to approximately said second temperature, so as to deposit said diamond on at least a part of said portion of said substrate.
Claim 31
Independent Claim
105 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; heating said gas mixture to a first temperature of from about 400° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture over a substrate, at least a portion of said substrate being heated to approximately said second temperature, so as to deposit said diamond on at least a part of said portion of said substrate.
Claim 32
Dependent Claim
29 words
The method according to claim 28 wherein said gas mixture is not pre-treated for activation of said gas mixture to a high energy level before flowing over said substrate.
Claim 33
Dependent Claim
25 words
The method according to claim 28 wherein said halogen in said halogen-containing species is selected from the group consisting of fluorine, chlorine, bromine and iodine.
Claim 34
Dependent Claim
23 words
The method according to claim 28 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 35
Dependent Claim
20 words
The method according to claim 28 wherein said gas mixture comprises a chlorofluorocarbon, a chalcogen-containing species and a hydrogen-containing species.
Claim 36
Dependent Claim
20 words
The method according to claim 28 wherein said gas mixture comprises natural gas, a halogen-containing species and an inert gas.
Claim 37
Dependent Claim
16 words
The method according to claim 28 wherein said gas mixture comprises methanol and a halogen-containing species.
Claim 38
Dependent Claim
18 words
The method according to claim 28 wherein said gas mixture comprises a chlorofluorocarbon, a hydrogen-containing species and oxygen.
Claim 39
Dependent Claim
18 words
The method according to claim 28 wherein said gas mixture comprises a halohydrocarbon, a hydrogen-containing species and oxygen.
Claim 40
Dependent Claim
19 words
The method according to claim 28 wherein said gas mixture comprises a sulfur containing hydrocarbon and a halogen-containing species.
Claim 41
Dependent Claim
14 words
The method according to claim 28 wherein said diamond comprises a polycrystalline diamond film.
Claim 42
Dependent Claim
12 words
The method according to claim 28 wherein said diamond comprises diamond particles.
Claim 43
Dependent Claim
13 words
The method according to claim 28 wherein said halogen-containing species comprises mixed halogens.
Claim 44
Dependent Claim
22 words
The method according to claim 28 wherein said second temperature is at least approximately several degrees Celsius cooler than said first temperature.
Claim 45
Dependent Claim
21 words
The method according to claim 28 wherein said second temperature is at least approximately 100° C. cooler than said first temperature.
Claim 46
Independent Claim
122 words
A method for depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; heating said gas mixture to a first temperature of from about 400° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C., said second temperature being at least approximately 100° C. cooler than said first temperature; and flowing said gas mixture over a substrate, at least a portion of said substrate being heated to approximately said second temperature so as to deposit a film comprising substantially pure diamond on at least part of said portion of said substrate.
Claim 47
Independent Claim
122 words
A method for depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; heating said gas mixture to a first temperature of from about 400° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C., said second temperature being at least approximately 100° C. cooler than said first temperature; and flowing said gas mixture over a substrate, at least a portion of said substrate being heated to approximately said second temperature so as to deposit a film comprising substantially pure diamond on at least part of said portion of said substrate.
Claim 48
Dependent Claim
29 words
The method according to claim 43 wherein said gas mixture is not pre-treated for activation of said gas mixture to a high energy level before flowing over said substrate.
Claim 49
Dependent Claim
25 words
The method according to claim 43 wherein said halogen in said halogen-containing species is selected from the group consisting of fluorine, chlorine, bromine and iodine.
Claim 50
Dependent Claim
23 words
The method according to claim 43 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 51
Independent Claim
104 words
A method for depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; heating said gas mixture to a first temperature of from about 800° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture over a substrate, at least a portion of said substrate being heated to approximately said second temperature, so as to deposit said diamond on at least part of said portion of said substrate.
Claim 52
Independent Claim
104 words
A method for depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; heating said gas mixture to a first temperature of from about 800° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture over a substrate, at least a portion of said substrate being heated to approximately said second temperature, so as to deposit said diamond on at least part of said portion of said substrate.
Claim 53
Dependent Claim
29 words
The method according to claim 47 wherein said gas mixture is not pre-treated for activation of said gas mixture to a high energy level before flowing over said substrate.
Claim 54
Dependent Claim
25 words
The method according to claim 47 wherein said halogen in said halogen-containing species is selected from the group consisting of fluorine, chlorine, bromine and iodine.
Claim 55
Dependent Claim
23 words
The method according to claim 47 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 56
Independent Claim
77 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, over a heated substrate so as to deposit said diamond on at least a portion of said substrate, said halogen-containing species not including elemental chlorine and not including carbon tetrachloride.
Claim 57
Independent Claim
77 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, over a heated substrate so as to deposit said diamond on at least a portion of said substrate, said halogen-containing species not including elemental chlorine and not including carbon tetrachloride.
Claim 58
Dependent Claim
23 words
The method according to claim 51 wherein said substrate is heated to a temperature of from about 250° C. to about 750° C.
Claim 59
Dependent Claim
28 words
The method according to claim 51 wherein said gas mixture flowing over said substrate is heated to a temperature of from about 250° C. to about 750° C.
Claim 60
Dependent Claim
24 words
The method according to claim 51 wherein said halogen in said halogen-containing species is selected from the group consisting of fluorine, bromine and iodine.
Claim 61
Dependent Claim
21 words
The method according to claim 51 wherein said gas mixture comprises a chlorofluorocarbon, a chalcogen-containing species and a hydrogen containing species.
Claim 62
Dependent Claim
20 words
The method according to claim 51 wherein said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 63
Independent Claim
112 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, through a reactor, heating said gas mixture to a first temperature of from about 400° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture at said second temperature over a substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 64
Independent Claim
112 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, through a reactor, heating said gas mixture to a first temperature of from about 400° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture at said second temperature over a substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 65
Dependent Claim
23 words
The method according to claim 57 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 66
Independent Claim
112 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, through a reactor, heating said gas mixture to a first temperature of from about 800° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture at said second temperature over a substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 67
Independent Claim
112 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species, a hydrogen-containing species and a carbon-containing species; flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, through a reactor, heating said gas mixture to a first temperature of from about 800° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture at said second temperature over a substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 68
Dependent Claim
23 words
The method according to claim 59 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 69
Independent Claim
66 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising mixed halogens, a chalcogen-containing species, a hydrogen containing species and a carbon containing species; and flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, over a heated substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 70
Independent Claim
66 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising mixed halogens, a chalcogen-containing species, a hydrogen containing species and a carbon containing species; and flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, over a heated substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 71
Dependent Claim
21 words
The method according to claim 61 wherein said mixed halogens comprise a single molecule having a plurality of different halogens therein.
Claim 72
Dependent Claim
23 words
The method according to claim 61 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 73
Independent Claim
62 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species and a carbon-containing species; and flowing said gas mixture without pre-treatment for activation of said gas mixture to a high energy level, over a heated substrate so as to deposit said diamond on at least a portion of said substrate.
Claim 74
Independent Claim
62 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species and a carbon-containing species; and flowing said gas mixture without pre-treatment for activation of said gas mixture to a high energy level, over a heated substrate so as to deposit said diamond on at least a portion of said substrate.
Claim 75
Dependent Claim
23 words
The method according to claim 64 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 76
Dependent Claim
25 words
The method according to claim 64 wherein said halogen in said halogen-containing species is selected from the group consisting of fluorine, chlorine, bromine and iodine.
Claim 77
Dependent Claim
16 words
The method according to claim 64 wherein said halogen is fluorine and said chalcogen is sulfur.
Claim 78
Dependent Claim
18 words
The method according to claim 64 wherein said gas mixture comprises carbon disulfide and a halogen containing species.
Claim 79
Dependent Claim
16 words
The method according to claim 64 wherein said gas mixture comprises carbon disulfide and elemental fluorine.
Claim 80
Dependent Claim
25 words
The method according to claim 64 wherein said substrate is heated to a temperature in the range from about 250° C. to about 750° C.
Claim 81
Dependent Claim
31 words
The method according to claim 64 wherein said gas mixture flowing over said substrate is heated to a temperature in the range of from about 250° C. to about 750° C.
Claim 82
Independent Claim
101 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species and a carbon-containing species; heating said gas mixture to a first temperature of from about 800° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture over a substrate, at least a portion of said substrate being heated to approximately said second temperature, so as to deposit said diamond on at least part of said portion of said substrate.
Claim 83
Independent Claim
101 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species and a carbon-containing species; heating said gas mixture to a first temperature of from about 800° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture over a substrate, at least a portion of said substrate being heated to approximately said second temperature, so as to deposit said diamond on at least part of said portion of said substrate.
Claim 84
Dependent Claim
29 words
The method according to claim 72 wherein said gas mixture is not pre-treated for activation of said gas mixture to a high energy level before flowing over said substrate.
Claim 85
Dependent Claim
25 words
The method according to claim 72 wherein said halogen in said halogen-containing species is selected from the group consisting of fluorine, chlorine, bromine and iodine.
Claim 86
Dependent Claim
23 words
The method according to claim 72 wherein said chalcogen in said chalcogen-containing species is selected from the group consisting of oxygen and sulfur.
Claim 87
Dependent Claim
18 words
The method according to claim 72 wherein said gas mixture comprises carbon disulfide and a halogen containing species.
Claim 88
Dependent Claim
16 words
The method according to claim 72 wherein said gas mixture comprises carbon disulfide and elemental fluorine.
Claim 89
Independent Claim
109 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species and a carbon-containing species; flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, through a reactor; heating said gas mixture to a first temperature of from about 400° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture at said second temperature over a substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 90
Independent Claim
109 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a chalcogen-containing species and a carbon-containing species; flowing said gas mixture, without pre-treatment for activation of said gas mixture to a high energy level, through a reactor; heating said gas mixture to a first temperature of from about 400° C. to about 920° C.; reducing the temperature of said gas mixture to a second temperature of from about 250° C. to about 750° C.; and flowing said gas mixture at said second temperature over a substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 91
Dependent Claim
29 words
The method according to claim 78 wherein said gas mixture is not pre-treated for activation of said gas mixture to a high energy level before flowing over said substrate.
Claim 92
Dependent Claim
16 words
The method according to claim 78 wherein said chalcogen is sulfur and said halogen is fluorine.
Claim 93
Dependent Claim
16 words
The method according to claim 78 wherein said gas mixture comprises carbon disulfide and elemental fluorine.
Claim 94
Independent Claim
73 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture, without pretreatment for activation of said gas mixture to a high energy level, over a substrate heated to a temperature of from about 250° C. to about 400° C. so as to deposit diamond on at least a portion of said substrate.
Claim 95
Independent Claim
73 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture, without pretreatment for activation of said gas mixture to a high energy level, over a substrate heated to a temperature of from about 250° C. to about 400° C. so as to deposit diamond on at least a portion of said substrate.
Claim 96
Independent Claim
73 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture, without activation of said gas mixture to a high energy level, over a substrate heated to substantially the same temperature as the gas mixture flowing over said substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 97
Independent Claim
73 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture, without activation of said gas mixture to a high energy level, over a substrate heated to substantially the same temperature as the gas mixture flowing over said substrate, so as to deposit said diamond on at least a portion of said substrate.
Claim 98
Independent Claim
88 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture, without pretreatment for activation of said gas mixture to a high energy level, over a heated substrate so as to deposit said diamond on at least a portion of said substrate, wherein said substrate is heated by said flowing gas mixture and is not in contact with a conductive heating element other than said flowing gas mixture.
Claim 99
Independent Claim
88 words
A method of depositing diamond on a substrate, said method comprising: providing a gas mixture comprising a halogen-containing species, a hydrogen-containing species and a carbon-containing species; and flowing said gas mixture, without pretreatment for activation of said gas mixture to a high energy level, over a heated substrate so as to deposit said diamond on at least a portion of said substrate, wherein said substrate is heated by said flowing gas mixture and is not in contact with a conductive heating element other than said flowing gas mixture.
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