US4108685A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device manufacture
Assignee: General Electric Co
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Filing: 1977-03-31
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Granted: 1978-08-22
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Expires: 1997-03-31
Abstract
Abstract An improved method of initiating the moving of a molten zone of an aluminum rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies alloying the aluminum metal to the semiconductor material of the surface of the body in contact therewith at a temperature of from 577 DEG to 660 DEG C. The alloying process enables one to migrate two or more intersecting "wires" simultaneously, as well as three "wires" intersecting at a common point of origin, through the body.
Inventors
- 👤 Mike F. Chang
- 👤 Harvey E. Cline
- 👤 Thomas R. Anthony
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:22
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/06; C30B13/02; C30B13/08; C30B13/10; H; H10; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
361 words
An improved method for migrating a melt of aluminum-rich semiconductor material through a solid body of the semiconductor material including the process steps of: (a) selecting a body of single crystal semiconductor material, wherein the semiconductor material is one selected from the group consisting of silicon, silicon carbide, germanium and gallium arsenide, and having two major opposed surfaces comprising the top and bottom surfaces thereof, a predetermined type conductivity, a predetermined level of resistivity, a preferred diamond cubic crystal structure, a preferred planar crystal orientation for at least one of the major surfaces which is one selected from the group consisting of (111), (100) and (110), a vertical axis substantially perpendicular to the opposed major surfaces, and a first preferred crystal axis substantially parallel with the vertical axis and substantially perpendicular to the opposed major surfaces; (b) vapor depositing a layer of aluminum metal on the major surface having a preferred planar crystal orientation, the layer having a preferred width and a preferred thickness and so oriented as to form at least one aluminum metal wire having a longitudinal axis substantially aligned parallel with a second preferred crystal axis of the crystal structure of the material of the body; (c) heating the body and the layer of aluminum metal to an elevated temperature of from about 577° C to about 660° C for a predetermined period of time sufficient to alloy the aluminum metal of the layer to at least that portion of the semiconductor material of the major surface of the body in contact therewith; (d) heating the body and the alloyed aluminum metal wire to a predetermined elevated temperature sufficient to form a melt of aluminum-rich semiconductor material on the surface of the body; (e) establishing a temperature gradient substantially parallel to the vertical axis of the body and the first axis of the crystal structure; and (f) migrating the melt of aluminum-rich semiconductor material through the solid body, substantially aligned with the first axis of the crystal structure, to a predetermind depth beneath that major surface to form a planar region of recrystallized material of the body having solid solubility of the aluminum metal of the layer therein.
Claim 2
Dependent Claim
361 words
An improved method for migrating a melt of aluminum-rich semiconductor material through a solid body of the semiconductor material including the process steps of: (a) selecting a body of single crystal semiconductor material, wherein the semiconductor material is one selected from the group consisting of silicon, silicon carbide, germanium and gallium arsenide, and having two major opposed surfaces comprising the top and bottom surfaces thereof, a predetermined type conductivity, a predetermined level of resistivity, a preferred diamond cubic crystal structure, a preferred planar crystal orientation for at least one of the major surfaces which is one selected from the group consisting of (111), (100) and (110), a vertical axis substantially perpendicular to the opposed major surfaces, and a first preferred crystal axis substantially parallel with the vertical axis and substantially perpendicular to the opposed major surfaces; (b) vapor depositing a layer of aluminum metal on the major surface having a preferred planar crystal orientation, the layer having a preferred width and a preferred thickness and so oriented as to form at least one aluminum metal wire having a longitudinal axis substantially aligned parallel with a second preferred crystal axis of the crystal structure of the material of the body; (c) heating the body and the layer of aluminum metal to an elevated temperature of from about 577° C to about 660° C for a predetermined period of time sufficient to alloy the aluminum metal of the layer to at least that portion of the semiconductor material of the major surface of the body in contact therewith; (d) heating the body and the alloyed aluminum metal wire to a predetermined elevated temperature sufficient to form a melt of aluminum-rich semiconductor material on the surface of the body; (e) establishing a temperature gradient substantially parallel to the vertical axis of the body and the first axis of the crystal structure; and (f) migrating the melt of aluminum-rich semiconductor material through the solid body, substantially aligned with the first axis of the crystal structure, to a predetermind depth beneath that major surface to form a planar region of recrystallized material of the body having solid solubility of the aluminum metal of the layer therein.
Claim 3
Dependent Claim
31 words
The method of claim 1 wherein the temperature gradient is from 50° to 200° C per centimeter, and the migration is practiced at a temperature of from 700° to 1350° C.
Claim 4
Dependent Claim
47 words
The method of claim 1 wherein the preferred planar crystal orientation is (100), the first preferred crystal axis is < 100 > , and the second preferred crystal axis is at least one selected from the group consisting of < 011 > and < 011 > .
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein the preferred planar crystal orientation is (111), and the first preferred crystal axis is < 111 >.
Claim 6
Dependent Claim
11 words
The method of claim 1 wherein the semiconductor material is silicon.
Claim 7
Dependent Claim
23 words
The method of claim 5 wherein the alloying temperature is 590° ± 10° C, and the alloying time is at least 20 minutes.
Claim 8
Dependent Claim
92 words
The method of claim 1 including the additional process step of forming a planar region having two opposed major surfaces in the body and so oriented that the two opposed major surfaces are substantially parallel to the two major opposed surfaces of the body; one of the opposed major surfaces of the planar region being contiguous and coextensive with one of the major opposed surfaces of the body, and each melt is migrated a predetermined distance through the body to at least intersect the other major opposed surface of the planar region.
Claim 9
Dependent Claim
58 words
The method of claim 7 wherein each of the planar regions is of a second and opposite type conductivity than that of the body, and the intersecting planar regions divide the body into a plurality of regions of semiconductor material of the same type conductivity as that of the body and each is electrically isolated from one another.
Claim 10
Dependent Claim
23 words
The method of claim 8 wherein the semiconductor material is silicon of N-type conductivity, and the planar regions are each of P-type conductivity.
Claim 11
Dependent Claim
23 words
The method of claim 9 wherein the alloying temperature is 590° ± 10° C, and the alloying time is at least 20 minutes.
Claim 12
Dependent Claim
48 words
The method of claim 1 including the additional process step prior to depositing the layer of metal on the surface of the body of forming a mask on the major surface having a preferred planar crystal orientation to define a preferred geometrical configuration for the layer of metal.
Claim 13
Dependent Claim
48 words
The method of claim 4 wherein the preferred geometrical configuration defines at least two intersecting lines, one line being oriented substantially parallel with the first preferred crystal axis, and the second line being oriented substantially parallel with a third preferred crystal axis of the material of the body.
Claim 14
Dependent Claim
11 words
The method of claim 12 wherein the semiconductor material is silicon.
Claim 15
Dependent Claim
23 words
The method of claim 13 wherein the alloying temperature is 590° ± 10° C, and the alloying time is at least 20 minutes.
Claim 16
Dependent Claim
31 words
The method of claim 12 wherein the temperature gradient is from 50° to 200° C per centimeter, and the migration is practiced at a temperature of from 700° to 1350° C.
Claim 17
Independent Claim
36 words
The method of 12 16 wherein the preferred planar crystal orientation is (100), the first preferred crystal axis is <100>, and the second preferred crystal axis is <011>, and the third preferred crystal axis is <011>.
Claim 18
Independent Claim
36 words
The method of 12 16 wherein the preferred planar crystal orientation is (100), the first preferred crystal axis is <100>, and the second preferred crystal axis is <011>, and the third preferred crystal axis is <011>.
Claim 19
Dependent Claim
52 words
The method of claim 12 wherein the preferred planar crystal orientation is (111), the first preferred crystal axis is <111>, the second preferred crystal axis is any crystal axis substantially parallel with the (111) plane, and the third preferred crystal axis is any remaining crystal axis substantially parallel with the (111) plane.
Claim 20
Dependent Claim
55 words
The method of claim 12 wherein the preferred planar crystal orientation is (111), the first preferred crystal axis is <111>, the second preferred crystal axis is one selected from the group consisting of <011>, <101> and <110>, and the third preferred crystal axis is any of the remaining axes substantially parallel with the (111) plane.
Claim 21
Dependent Claim
54 words
The method of claim 12 wherein the preferred crystal orientation is (111), the first preferred crystal axis is <111>, the second preferred crystal axis is one selected from the group consisting of <112>, <211> and <121>, and the third preferred crystal axis is any of the remaining axes substantially parallel with the (111) plane.
Claim 22
Dependent Claim
43 words
The method of claim 11 including the additional process step after forming the mask and prior to depositing the layer of metal of: etching selectively the major surface of the body to form at least one trough-like depression therein of a predetermined depth.
Claim 23
Dependent Claim
11 words
The method of claim 20 wherein the semiconductor material is silicon.
Claim 24
Dependent Claim
23 words
The method of claim 21 wherein the alloying temperature is 590° ± 10° C, and the alloying time is at least 20 minutes.
Claim 25
Dependent Claim
31 words
The method of claim 20 wherein the temperature gradient is from 50° to 200° C per centimeter, and the migration is practiced at a temperature of from 700° to 1350° C.
Claim 26
Dependent Claim
39 words
The method of claim 20 wherein the preferred planar crystal orientation is (100), the first preferred crystal axis is <100>, and the second preferred crystal axis is at least one selected from the group consisting of <011> and <011>.
Claim 27
Dependent Claim
21 words
The method of claim 20 wherein the preferred planar crystal orientation is (111), and the first preferred crystal axis is <111>.
Claim 28
Dependent Claim
32 words
The method of claim 20 wherein the major surface has a preferred planar crystal orientation of (110); the first preferred crystal axis is <110>, and the second preferred crystal axis is <110>.
Claim 29
Dependent Claim
43 words
The method of claim 20 wherein the preferred planar crystal orientation is (111), and the geometrical configuration of the mask defines at least three lines, each line being oriented substantially parallel with a crystal axis which is substantially parallel with the (111) plane.
Claim 30
Dependent Claim
11 words
The method of claim 27 wherein the semiconductor material is silicon.
Claim 31
Dependent Claim
23 words
The method of claim 28 wherein the alloying temperature is 590° ± 10° C, and the alloying time is at least 20 minutes.
Claim 32
Dependent Claim
12 words
The method of claim 27 wherein the geometrical configuration defines a hexagon.
Claim 33
Dependent Claim
92 words
The method of claim 30 including the additional process step of forming a planar region having two opposed major surfaces in the body and so oriented that the two opposed major surfaces are substantially parallel to the two major opposed surfaces of the body, one of the opposed major surfaces of the planar region being contiguous and coextensive with one of the major opposed surfaces of the body, and each melt is migrated a predetermined distance through the body to at least intersect the other major opposed surface of the planar region.
Claim 34
Dependent Claim
58 words
The method of claim 31 wherein each of the planar regions is of a second and opposite type conductivity than that of the body, and the intersecting planar regions divide the body into a plurality of regions of semiconductor material of the same type conductivity as that of the body and each is electrically isolated from one another.
Claim 35
Dependent Claim
23 words
The method of claim 32 wherein the semiconductor material is silicon of N-type conductivity, and the planar regions are each of P-type conductivity.
Claim 36
Dependent Claim
23 words
The method of claim 33 wherein the alloying temperature is 590° ± 10° C, and the alloying time is at least 20 minutes.
References Cited (Backward Citations)
US4040868A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-08-21 | 1982-02-20 | 1982-08-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-08-21 | 1986-02-20 | 1986-08-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-08-21 | 1990-02-20 | 1990-08-22 | $7700.00 | Window Closed / Lapsed |