Patent US5310990A successfully refreshed from Google Patents.
US5310990A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of laser processing ferroelectric materials
Assignee: United States Department of the Navy
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Filing: 1991-06-03
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Granted: 1994-05-10
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Expires: 2011-06-03
Abstract
Abstract Processing methods transform ferroelectric precursor films into a desired crystalline structure without adversely heating nearby materials and circuitry such as those found associated with lead zirconate titanate films. The thin film sample is placed within an appropriate chamber, where a suitable ambient is in contact with the thin film sample. The ambient may be air, oxygen or any other ambient which is known in the art to be appropriate for annealing ferroelectric materials. In this regard annealing in air can done without the processing chamber. The process for annealing relies upon continuous wave (CW) laser annealing, pulse UV annealing with or without a laser and various combinations of thermal pretreatment and processing to allow solid state diffusion in accordance with parameters appropriate for a particular application. Methods of laser patterning thin film ferroelectrics without adversely damaging adjacent or underlying layers, e.g. electrodes, are also disclosed.
Inventors
- 👤 Stephen D. Russell
- 👤 Douglas A. Sexton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:59
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; B; B23; B23K; B23K26/00; B23K26/36; B23K26/361; C; C21; C21D; C21D8/00; C21D8/12; C21D8/1294; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/285; H10P95/00
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
124 words
A method of laser patterning a region of a thin film ferroelectric material comprising: placing said thin film ferroelectric material in an appropriate processing chamber; contacting said region of said thin film ferroelectric material with a suitable ambient; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric material in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with the proper amount of fluence to cause substantial uniform ablation of said region of said thin film ferroelectric material to create said laser patterning without damage to adjacent or underlying materials.
Claim 2
Independent Claim
124 words
A method of laser patterning a region of a thin film ferroelectric material comprising: placing said thin film ferroelectric material in an appropriate processing chamber; contacting said region of said thin film ferroelectric material with a suitable ambient; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric material in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with the proper amount of fluence to cause substantial uniform ablation of said region of said thin film ferroelectric material to create said laser patterning without damage to adjacent or underlying materials.
Claim 3
Dependent Claim
33 words
A method of laser patterning according to claim 1 in which the step of illuminating is repeated to effect a desired depth of ablation and said patterning in said thin film ferroelectric material.
Claim 4
Dependent Claim
26 words
A method of laser patterning according to claim 1 or 2 in which said laser light is pulsed in the UV region of the electromagnetic spectrum.
Claim 5
Dependent Claim
29 words
A method of laser patterning according to claim 3 in which said fluence is between about 20 mJ/cm 2 and 500 mJ/cm 2 with pulse durations exceeding 10 nsec..
Claim 6
Dependent Claim
23 words
A method of laser patterning according to claim 4 in which the pulsed laser light is at the XeF wavelength of 351 nm.
Claim 7
Independent Claim
172 words
A method of laser annealing a region of a thin film ferroelectric precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric precursor in an appropriate processing chamber; contacting said thin film ferroelectric precursor with a suitable ambient; preheating said region of said thin film ferroelectric precursor to provide a thermal pretreatment to prevent volatilization and ablation thereof; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to allow solid state diffusion of said precursor into the ferroelectric phase to effect said annealing of said region of said precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said pretreatment being above 100° C. in vacuum for duration for at least one hour.
Claim 8
Independent Claim
172 words
A method of laser annealing a region of a thin film ferroelectric precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric precursor in an appropriate processing chamber; contacting said thin film ferroelectric precursor with a suitable ambient; preheating said region of said thin film ferroelectric precursor to provide a thermal pretreatment to prevent volatilization and ablation thereof; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to allow solid state diffusion of said precursor into the ferroelectric phase to effect said annealing of said region of said precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said pretreatment being above 100° C. in vacuum for duration for at least one hour.
Claim 9
Independent Claim
198 words
A method of laser annealing a region of a thin film ferroelectric precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric precursor in an appropriate processing chamber; contacting said thin film ferroelectric precursor with a suitable ambient; preheating said region of said thin film ferroelectric precursor to provide a thermal pretreatment to prevent volatilization and ablation thereof; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to allow solid state diffusion of said precursor into the ferroelectric phase to effect said annealing of said region of said precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which the step of illuminating with UV laser light being repeated to effect a desired depth of annealing in said thin film ferroelectric precursor and in which said pretreatment being above 100° C. in vacuum for duration for at least one hour.
Claim 10
Independent Claim
198 words
A method of laser annealing a region of a thin film ferroelectric precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric precursor in an appropriate processing chamber; contacting said thin film ferroelectric precursor with a suitable ambient; preheating said region of said thin film ferroelectric precursor to provide a thermal pretreatment to prevent volatilization and ablation thereof; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to allow solid state diffusion of said precursor into the ferroelectric phase to effect said annealing of said region of said precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which the step of illuminating with UV laser light being repeated to effect a desired depth of annealing in said thin film ferroelectric precursor and in which said pretreatment being above 100° C. in vacuum for duration for at least one hour.
Claim 11
Independent Claim
175 words
A method of laser annealing a region of a thin film ferroelectric precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric precursor in an appropriate processing chamber; contacting said thin film ferroelectric precursor with a suitable ambient; preheating said region of said thin film ferroelectric precursor to provide a thermal pretreatment to prevent volatilization and ablation thereof; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to allow solid state diffusion of said precursor into the ferroelectric phase to effect said annealing of said region of said precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said thermal pretreatment being above 300° C. for duration for at least one hour in a gaseous ambient.
Claim 12
Independent Claim
175 words
A method of laser annealing a region of a thin film ferroelectric precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric precursor in an appropriate processing chamber; contacting said thin film ferroelectric precursor with a suitable ambient; preheating said region of said thin film ferroelectric precursor to provide a thermal pretreatment to prevent volatilization and ablation thereof; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to allow solid state diffusion of said precursor into the ferroelectric phase to effect said annealing of said region of said precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said thermal pretreatment being above 300° C. for duration for at least one hour in a gaseous ambient.
Claim 13
Independent Claim
201 words
A method of laser annealing a region of a thin film ferroelectric precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric precursor in an appropriate processing chamber; contacting said thin film ferroelectric precursor with a suitable ambient; preheating said region of said thin film ferroelectric precursor to provide a thermal pretreatment to prevent volatilization and ablation thereof; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to allow solid state diffusion of said precursor into the ferroelectric phase to effect said annealing of said region of said precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which the step of illuminating with UV laser light being repeated to effect a desired depth of annealing in said thin film ferroelectric precursor and in which said thermal pretreatment being above 300° C. for duration for at least one hour in a gaseous ambient.
Claim 14
Independent Claim
201 words
A method of laser annealing a region of a thin film ferroelectric precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric precursor in an appropriate processing chamber; contacting said thin film ferroelectric precursor with a suitable ambient; preheating said region of said thin film ferroelectric precursor to provide a thermal pretreatment to prevent volatilization and ablation thereof; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to allow solid state diffusion of said precursor into the ferroelectric phase to effect said annealing of said region of said precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which the step of illuminating with UV laser light being repeated to effect a desired depth of annealing in said thin film ferroelectric precursor and in which said thermal pretreatment being above 300° C. for duration for at least one hour in a gaseous ambient.
Claim 15
Independent Claim
191 words
A method of laser annealing a region of a thin film ferroelectric sol-gel precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric sol-gel precursor in an appropriate processing chamber; contacting said thin film ferroelectric sol-gel precursor with a suitable ambient; preheating said region of said thin film ferroelectric sol-gel precursor to provide a thermal pretreatment to prevent volatilization and ablation of said sol-gel precursor; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric sol-gel precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to densify said thin film ferroelectric sol-gel precursor and allow solid state diffusion of said sol-gel precursor into the ferroelectric phase to effect said annealing of said region of said sol-gel precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said thermal pretreatment being above 100° C. in vacuum for duration for at least one hour.
Claim 16
Independent Claim
191 words
A method of laser annealing a region of a thin film ferroelectric sol-gel precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric sol-gel precursor in an appropriate processing chamber; contacting said thin film ferroelectric sol-gel precursor with a suitable ambient; preheating said region of said thin film ferroelectric sol-gel precursor to provide a thermal pretreatment to prevent volatilization and ablation of said sol-gel precursor; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric sol-gel precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to densify said thin film ferroelectric sol-gel precursor and allow solid state diffusion of said sol-gel precursor into the ferroelectric phase to effect said annealing of said region of said sol-gel precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said thermal pretreatment being above 100° C. in vacuum for duration for at least one hour.
Claim 17
Independent Claim
191 words
A method of laser annealing a region of a thin film ferroelectric sol-gel precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric sol-gel precursor in an appropriate processing chamber; contacting said thin film ferroelectric sol-gel precursor with a suitable ambient; preheating said region of said thin film ferroelectric sol-gel precursor to provide a thermal pretreatment to prevent volatilization and ablation of said sol-gel precursor; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric sol-gel precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to densify said thin film ferroelectric sol-gel precursor and allow solid state diffusion of said sol-gel precursor into the ferroelectric phase to effect said annealing of said region of said sol-gel precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said thermal pretreatment being above 100° C. in vacuum for duration for at least one hour.
Claim 18
Independent Claim
191 words
A method of laser annealing a region of a thin film ferroelectric sol-gel precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric sol-gel precursor in an appropriate processing chamber; contacting said thin film ferroelectric sol-gel precursor with a suitable ambient; preheating said region of said thin film ferroelectric sol-gel precursor to provide a thermal pretreatment to prevent volatilization and ablation of said sol-gel precursor; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric sol-gel precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to densify said thin film ferroelectric sol-gel precursor and allow solid state diffusion of said sol-gel precursor into the ferroelectric phase to effect said annealing of said region of said sol-gel precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said thermal pretreatment being above 100° C. in vacuum for duration for at least one hour.
Claim 19
Independent Claim
193 words
A method of laser annealing a region of a thin film ferroelectric sol-gel precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric sol-gel precursor in an appropriate processing chamber; contacting said thin film ferroelectric sol-gel precursor with a suitable ambient; preheating said region of said thin film ferroelectric sol-gel precursor to provide a thermal pretreatment to prevent volatilization and ablation of said sol-gel precursor; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric sol-gel precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to densify said thin film ferroelectric sol-gel precursor and allow solid state diffusion of said sol-gel precursor into the ferroelectric phase to effect said annealing of said region of said sol-gel precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said thermal pretreatment being above 300° C. for duration for at least one hour in a gaseous ambient.
Claim 20
Independent Claim
193 words
A method of laser annealing a region of a thin film ferroelectric sol-gel precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric sol-gel precursor in an appropriate processing chamber; contacting said thin film ferroelectric sol-gel precursor with a suitable ambient; preheating said region of said thin film ferroelectric sol-gel precursor to provide a thermal pretreatment to prevent volatilization and ablation of said sol-gel precursor; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric sol-gel precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to densify said thin film ferroelectric sol-gel precursor and allow solid state diffusion of said sol-gel precursor into the ferroelectric phase to effect said annealing of said region of said sol-gel precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which said thermal pretreatment being above 300° C. for duration for at least one hour in a gaseous ambient.
Claim 21
Independent Claim
221 words
A method of laser annealing a region of a thin film ferroelectric sol-gel precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric sol-gel precursor in an appropriate processing chamber; contacting said thin film ferroelectric sol-gel precursor with a suitable ambient; preheating said region of said thin film ferroelectric sol-gel precursor to provide a thermal pretreatment to prevent volatilization and ablation of said sol-gel precursor; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric sol-gel precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to densify said thin film ferroelectric sol-gel precursor and allow solid state diffusion of said sol-gel precursor into the ferroelectric phase to effect said annealing of said region of said sol-gel precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which the step of illuminating with pulsed laser light is repeated to effect a desired depth of annealing in said thin film ferroelectric said sol-gel precursor and in which said thermal pretreatment being above 300° C. for duration for at least one hour in a gaseous ambient.
Claim 22
Independent Claim
221 words
A method of laser annealing a region of a thin film ferroelectric sol-gel precursor to form a thin film ferroelectric material comprising: placing said thin film ferroelectric sol-gel precursor in an appropriate processing chamber; contacting said thin film ferroelectric sol-gel precursor with a suitable ambient; preheating said region of said thin film ferroelectric sol-gel precursor to provide a thermal pretreatment to prevent volatilization and ablation of said sol-gel precursor; providing a beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region; and illuminating said region of said thin film ferroelectric sol-gel precursor in said suitable ambient with said beam of UV laser light having a substantially flat homogenized-intensity-profile response that is shaped to cover said region with sufficient fluence to densify said thin film ferroelectric sol-gel precursor and allow solid state diffusion of said sol-gel precursor into the ferroelectric phase to effect said annealing of said region of said sol-gel precursor to form said thin film ferroelectric material without damage to adjacent or underlying materials, in which the step of illuminating with pulsed laser light is repeated to effect a desired depth of annealing in said thin film ferroelectric said sol-gel precursor and in which said thermal pretreatment being above 300° C. for duration for at least one hour in a gaseous ambient.
References Cited (Backward Citations)
US4114018A
Cited
US4275288A
Cited
US4305640A
Cited
US4316074A
Cited
US4370175A
Cited
US4475027A
Cited
US4427723A
Cited
US4437139A
Cited
US4508749A
Cited
US4874920A
Cited
US4668304A
Cited
US4733944A
Cited
US4793694A
Cited
US4752668A
Cited
US4786358A
Cited
US4882200A
Cited
US4946710A
Cited
US5132248A
Cited
US4963390A
Cited
US5119760A
Cited
US4932747A
Cited
US5068515A
Cited
US5164324A
Cited
US5145713A
Cited
US5094977A
Cited
US5106211A
Cited
US5188902A
Cited
US5155658A
Cited
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