Patent US5308594A successfully refreshed from Google Patents.
US5308594A
Expired / Lapsed
US
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Edge-heat-sink technique for zone melting recrystallization of semiconductor-on-insulator films
Assignee: Massachusetts Institute of Technology
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Filing: 1992-09-10
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Granted: 1994-05-03
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Expires: 2012-09-10
Abstract
Abstract Wafers of silicon-on-insulator (SOI) produced by the zone melting recrystallization technique are known to exhibit warping and edge defects which prohibit their use in automated silicon wafer processing equipment. These deficiencies arise from excess heat buildup at the periphery of the wafer because the wafer edge acts as a barrier to heat transfer. Dissipation of heat from the edge by varying the heat dissipation efficiency of the environment about the periphery of the wafer allows wafers with substantially fewer defects to be produced.
Inventors
- 👤 Chenson K. Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 08:25
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B13/00; C30B13/32; C30B25/12; C30B29/00; C30B29/02; C30B29/06; F; F27; F27B; F27B17/00; F27B17/0016; F27B17/0025; H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0432; H10P72/0434; H10P72/0436; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1076; Y10T117/1088
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
54 words
An apparatus for dissipating heat about the periphery of a semiconductor wafer during Zone Melting Recrystallization (ZMR) comprising: a platen; and a substantially annular heat sink on said platen in contact with and supporting the periphery of the wafer to dissipate a buildup of excess heat from the periphery of the wafer during ZMR.
Claim 2
Independent Claim
54 words
An apparatus for dissipating heat about the periphery of a semiconductor wafer during Zone Melting Recrystallization (ZMR) comprising: a platen; and a substantially annular heat sink on said platen in contact with and supporting the periphery of the wafer to dissipate a buildup of excess heat from the periphery of the wafer during ZMR.
Claim 3
Dependent Claim
15 words
The apparatus of claim 1 wherein said annular heat sink is integral with said platen.
Claim 4
Dependent Claim
45 words
The apparatus of claim 1 further comprising a chamber disposed about said annular heat sink to encapsulate an ambient gas for varying the heat dissipation efficiency of central portions of the wafer relative to the periphery of the wafer in contact with said heat sink.
Claim 5
Independent Claim
87 words
An apparatus for dissipating heat about the periphery of a semiconductor wafer during Zone Melting Recrystallization (ZMR) comprising: a hollow annular member surrounding and supporting the wafer; an annular plenum within the perimeter of said member for conducting fluid flow within said member; and a substantially continuous annular vent formed in the upper surface of said member from said plenum to the ambient atmosphere for inducing a fluid stream approximately perpendicular to the plane of said member, the fluid stream thermally contacting the periphery of the wafer.
Claim 6
Independent Claim
87 words
An apparatus for dissipating heat about the periphery of a semiconductor wafer during Zone Melting Recrystallization (ZMR) comprising: a hollow annular member surrounding and supporting the wafer; an annular plenum within the perimeter of said member for conducting fluid flow within said member; and a substantially continuous annular vent formed in the upper surface of said member from said plenum to the ambient atmosphere for inducing a fluid stream approximately perpendicular to the plane of said member, the fluid stream thermally contacting the periphery of the wafer.
Claim 7
Dependent Claim
30 words
The apparatus of claim 4 further including a platen support spanning said member for supporting a wafer of diameter less than or equal to the inner diameter of said member.
Claim 8
Independent Claim
98 words
An apparatus for Zone Melting Recrystallization (ZMR) of a semiconductor wafer comprising a platen; an annular thermally conductive wafer support on said platen; a ring heater substantially about the outer diameter of said platen for stabilizing the base temperature of the wafer; a heating member disposed beneath said platen for heating said platen and the wafer; an annular thermal shield member extending about the outer periphery of said wafer support for shielding the edge of the wafer; and an upper strip heater disposed above the wafer, said strip heater being in a plane parallel to the wafer plane.
Claim 9
Independent Claim
98 words
An apparatus for Zone Melting Recrystallization (ZMR) of a semiconductor wafer comprising a platen; an annular thermally conductive wafer support on said platen; a ring heater substantially about the outer diameter of said platen for stabilizing the base temperature of the wafer; a heating member disposed beneath said platen for heating said platen and the wafer; an annular thermal shield member extending about the outer periphery of said wafer support for shielding the edge of the wafer; and an upper strip heater disposed above the wafer, said strip heater being in a plane parallel to the wafer plane.
Claim 10
Dependent Claim
29 words
The apparatus of claim 6 wherein said wafer support comprises a transverse opening to allow gaseous communication between the inner portion of said wafer support and the ambient atmosphere.
Claim 11
Dependent Claim
25 words
The apparatus of claim 4 further comprising an inlet traversing said member for introducing a gas from the exterior of said member to said plenum.
Claim 12
Dependent Claim
10 words
The apparatus of claim 6 wherein said platen is disk-shaped.
References Cited (Backward Citations)
US3158505A
Cited
US3539759A
Cited
US3627590A
Cited
US4135027A
Cited
US4113547A
Cited
US4435447A
Cited
US4277320A
Cited
US4280989A
Cited
US4371421A
Cited
US4448632A
Cited
EP0071731A1
Cited
US4479846A
Cited
US4493977A
Cited
US4503807A
Cited
US4535227A
Cited
JPS61219130A
Cited
JPS624315A
Cited
JPS624314A
Cited
US5160575A
Cited
JPS62282431A
Cited
WO1989004386A1
Cited
US5033407A
Cited
US4990374A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-02 | 1997-11-01 | 1998-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-02 | 2001-11-01 | 2002-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-02 | 2005-11-01 | 2006-05-03 | $7700.00 | Window Closed / Lapsed |