EP0071731A1
Expired / Lapsed
EP
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Production of single crystal semiconductors
Assignee: Texas Instruments Inc
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Filing: 1982-06-24
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Granted: —
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Expires: 2002-06-24
Abstract
Abstract Polycrystalline semiconductor material is treated to form a skin of a thermally stable substance and melted with the molten material retained by the film. Upon cooling, the material solidifies as single crystal and the skin is removed.
Inventors
- 👤 Jules David Levine
- 👤 William Randall Mckee
- 👤 Kent Randall Carson
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 13:32
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/002; C30B29/00; C30B29/60
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
65 words
The method comprising: (a) thermally treating a polycrystalline semiconductor material in a fluid environment for forming a skin thereon of a thermally stable compound of said material and a constituent of said gas; (b) thereafter melting the material within said skin while the molten material is retained by said film; and (c) cooling the material to form a solid single crystal body within said skin.
Claim 2
Independent Claim
65 words
The method comprising: (a) thermally treating a polycrystalline semiconductor material in a fluid environment for forming a skin thereon of a thermally stable compound of said material and a constituent of said gas; (b) thereafter melting the material within said skin while the molten material is retained by said film; and (c) cooling the material to form a solid single crystal body within said skin.
Claim 3
Dependent Claim
19 words
The method of Claim 1 wherein said material is one of the class comprising silicon, germanium and gallium arsenide.
Claim 4
Dependent Claim
19 words
The method of Claim 1 wherein said material is silicon and said environment is a gaseous atmosphere of oxygen.
Claim 5
Dependent Claim
21 words
The method of Claim 1 wherein said material is germanium and said environment is a gaseous atmosphere of silicon and ammonia.
Claim 6
Dependent Claim
20 words
The method of Claim 1 wherein said material is gallium arsenide and the skin is formed by chemical vapor deposition.
Claim 7
Independent Claim
96 words
A method for producing particles of single crystal semiconductor material from irregular particles of polycrystalline material, comprising the steps of: (a) heating said polycrystalline particles to a tempertaure below the melting point thereof in an environment containing a reactive gas capable of growth of a coating over the surface of each particle; (b) heating said polycrystalline materials inside each said coating to a tempertaure above the melting point of said polysilicon material in the pressure of a reactive gas; and (c) cooling the particles to allow the molten material to solidify in a single crystal structure.
Claim 8
Independent Claim
96 words
A method for producing particles of single crystal semiconductor material from irregular particles of polycrystalline material, comprising the steps of: (a) heating said polycrystalline particles to a tempertaure below the melting point thereof in an environment containing a reactive gas capable of growth of a coating over the surface of each particle; (b) heating said polycrystalline materials inside each said coating to a tempertaure above the melting point of said polysilicon material in the pressure of a reactive gas; and (c) cooling the particles to allow the molten material to solidify in a single crystal structure.
Claim 9
Dependent Claim
24 words
The method set forth in Claim 6, wherein polycrystalline particles of silicon are heated in an oxygen environment, to grow a silicon dioxide skin.
Claim 10
Dependent Claim
26 words
The method set forth in Claim 6, wherein polycrystalline particles of silicon are heated in a nitrogen containing gas environment, to grow a silicon nitride skin.
Claim 11
Dependent Claim
27 words
The method set forth in Claim 6, wherein polycrystalline particles of silicon are heated in a carbon containing gas environment to grow a skin of silicon carbide.
Claim 12
Independent Claim
102 words
The method of producing particles of single crystal silicon from particles of polycrystalline silicon, comprising the steps of: (a) heating said polycrystalline silicon particles to a temperature below 1410°C in an environment containing a reactive gas for growth of silicon compound coatings over the surface of each particle; (b) heating the materials inside said coatings to a temperture above 1410°C to melt said materials in the pressure of a reactive gas; (c) cooling the particles to allow the molten silicon to solidify in a single crystal structure; and (d) annealing said particles for removal of contaminants in the material inside said skin.
Claim 13
Independent Claim
102 words
The method of producing particles of single crystal silicon from particles of polycrystalline silicon, comprising the steps of: (a) heating said polycrystalline silicon particles to a temperature below 1410°C in an environment containing a reactive gas for growth of silicon compound coatings over the surface of each particle; (b) heating the materials inside said coatings to a temperture above 1410°C to melt said materials in the pressure of a reactive gas; (c) cooling the particles to allow the molten silicon to solidify in a single crystal structure; and (d) annealing said particles for removal of contaminants in the material inside said skin.
Claim 14
Dependent Claim
22 words
The method as recited in Claim 10, wherein the particles are heated in an oxygen environment to grow a silicon dioxide skin.
Claim 15
Independent Claim
126 words
A method of producing particles of single crystal silicon from particles of polycrystalline silicon, comprising the steps of: (a) exposing said particles to a mixture of inert gas and hydrogen chloride gas at an elevated temperature below the melting point of silicon to clean the surfaces of said particles; (b) elevating the temperature of the cleaned particles to slightly below 1410°C in a gaseous environment containing oxygen, to grow a continuous silicon dioxide coating over the surface of each said particle; (c) thereafter further elevating the temperature of said particles in the pressure of a reactive gas to melt the polysilicon material inside the coating of each said particle; and (d) cooling the particles to allow the molten silicon to solidify in a single crystal structure.
Claim 16
Independent Claim
126 words
A method of producing particles of single crystal silicon from particles of polycrystalline silicon, comprising the steps of: (a) exposing said particles to a mixture of inert gas and hydrogen chloride gas at an elevated temperature below the melting point of silicon to clean the surfaces of said particles; (b) elevating the temperature of the cleaned particles to slightly below 1410°C in a gaseous environment containing oxygen, to grow a continuous silicon dioxide coating over the surface of each said particle; (c) thereafter further elevating the temperature of said particles in the pressure of a reactive gas to melt the polysilicon material inside the coating of each said particle; and (d) cooling the particles to allow the molten silicon to solidify in a single crystal structure.
Claim 17
Dependent Claim
23 words
The method set forth in Claim 12, wherein the polycrystalline particles are heated in an oxygen environment, to grow a silicon dioxide skin.
Claim 18
Dependent Claim
24 words
The method set forth in Claim 12, wherein the polycrystalline particles are heated in a nitrogen containing environment, to grow a silicon nitride skin.
Claim 19
Dependent Claim
25 words
The method set forth in Claim 12, wherein the polycrystalline particles are heated in a carbon containing gas environment to grow a silicon carbide skin.
Claim 20
Independent Claim
101 words
A method of producing particles of single crystal silicon from particles of polycrystalline silicon, comprising the steps of: (a) oxidizing the polysilicon particles by heating at about 1380°C in an environment containing oxygen for about 3 minutes to grow a continuous silicon dioxide coating over the surface of each particle; (b) elevating the temperature of the polycrystalline materials inside the coating of each said particle to about 1430°C for about 2 minutes while in said oxygen environment; and (c) cooling the particles to about 1380°C for about 10 minutes to allow the molten silicon to solidify in a single crystal structure.
Claim 21
Independent Claim
101 words
A method of producing particles of single crystal silicon from particles of polycrystalline silicon, comprising the steps of: (a) oxidizing the polysilicon particles by heating at about 1380°C in an environment containing oxygen for about 3 minutes to grow a continuous silicon dioxide coating over the surface of each particle; (b) elevating the temperature of the polycrystalline materials inside the coating of each said particle to about 1430°C for about 2 minutes while in said oxygen environment; and (c) cooling the particles to about 1380°C for about 10 minutes to allow the molten silicon to solidify in a single crystal structure.
Claim 22
Dependent Claim
34 words
The method set forth in Claim 16, wherein the particles are thereafter annealed at a temperature of about 1250°C for a period of several hours to remove dissolved oxygen from the single crystal particles.
Claim 23
Dependent Claim
29 words
A particle of single crystal semiconductor material encompassed within a skin comprising a compound of said material and a reactive gas and formed in an environment of elevated temperatures.
Claim 24
Dependent Claim
29 words
A particle of single crystal semiconductor material encompassed within a skin comprising a compound of said material and a reactive gas and formed in an environment of elevated temperatures.
Claim 25
Dependent Claim
27 words
The particle according to Claim 18 wherein said particle is in platelet form on a substrate with said free surfaces of said material covered by said skin.
References Cited (Backward Citations)
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