US5300322A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Molybdenum enhanced low-temperature deposition of crystalline silicon nitride
Assignee: Lockheed Martin Energy Systems Inc
•
Filing: 1992-03-10
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Granted: 1994-04-05
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Expires: 2012-03-10
Abstract
Abstract A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.
Inventors
- 👤 Richard A. Lowden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:44
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/345; C23C16/04; C23C16/045; Y; Y10; Y10S; Y10S427/00; Y10S427/10
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
64 words
A method for chemical vapor deposition of crystalline silicon nitride comprising the steps of: introducing into a vessel a substrate; introducing into said vessel a thermally decomposable gaseous mixture comprising a silicon source, a molybdenum source, a nitrogen source, and hydrogen; and, thermally decomposing said gaseous mixture to deposit onto said substrate a coating comprising crystalline silicon nitride having a molybdenum silicide dispersed therein.
Claim 2
Independent Claim
64 words
A method for chemical vapor deposition of crystalline silicon nitride comprising the steps of: introducing into a vessel a substrate; introducing into said vessel a thermally decomposable gaseous mixture comprising a silicon source, a molybdenum source, a nitrogen source, and hydrogen; and, thermally decomposing said gaseous mixture to deposit onto said substrate a coating comprising crystalline silicon nitride having a molybdenum silicide dispersed therein.
Claim 3
Dependent Claim
24 words
The method according to claim 1 wherein said silicon source comprises a composition selected from the group consisting of silanes, chlorosilanes, and silicon chlorides.
Claim 4
Dependent Claim
13 words
The method according to claim 2 wherein said silicon source comprises silicon tetrachloride.
Claim 5
Dependent Claim
25 words
The method according to claim 1 wherein said molybdenum source comprises a composition selected from the group consisting of molybdenum-containing organometallic composition and molybdenum halides.
Claim 6
Dependent Claim
13 words
The method according to claim 4 wherein said molybdenum source comprises molybdenum pentachloride.
Claim 7
Dependent Claim
12 words
The method according to claim 1 wherein said nitrogen source comprises ammonia.
Claim 8
Dependent Claim
26 words
The method according to claim 1 wherein said decomposing step is accomplished at a temperature in the range of about 1000° C. to about 1500° C.
Claim 9
Dependent Claim
27 words
The method according to claim 1 wherein said decomposing step is carried out at a temperature in the range of about 1200° C. to about 1400° C.
Claim 10
Dependent Claim
18 words
The method according to claim 1 wherein said crystalline nitride of silicon comprises β-Si 3 N 4 .
Claim 11
Dependent Claim
30 words
The method according to claim 1 wherein said substrate comprises a porous ceramic preform, and wherein said coating is deposited through said porous ceramic preform to produce a composite material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |