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US5300185A
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Method of manufacturing III-V group compound semiconductor
Assignee: Toshiba Corp
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Filing: 1992-03-27
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Granted: 1994-04-05
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Expires: 2012-03-27
Abstract
Abstract Disclosed is a method of efficiently manufacturing a III-V group compound semiconductor that carbon mixing is reduced, wherein a compound represented by the formula (1) or (2) is used as a V group source: ##STR1## wherein X represents a V group element, n represents integer of 1 to 3, and Y represents electron-releasing group bonded to a position selected from 2-, 4-, and 6-positions, ##STR2## wherein X represents a V group element, m represents an integer of 1 or 2, and Y represents electron-releasing group bonded to a position selected from 2- and 4-positions.
Inventors
- 👤 Hisao Hori
- 👤 Yoshito Kawakyu
- 👤 Hironori Ishikawa
- 👤 Masao Mashita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:45
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C30B29/00; C30B29/10; C30B29/40
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
97 words
A method of manufacturing a III-V group compound semiconductor in which a III group source and a V group source are decomposed to grow the III-V group compound semiconductor on a substrate, wherein said V group source is a compound represented by formula (1) given below: ##STR18## where X represents a V group element, n represents an integer from 1 to 3, and Y represents a group selected from the group consisting of a non-substituted amino group and an alkyl-substituted amino group bonded to the benzene ring at a position selected from the 2-, 4-, and 6-positions.
Claim 2
Independent Claim
97 words
A method of manufacturing a III-V group compound semiconductor in which a III group source and a V group source are decomposed to grow the III-V group compound semiconductor on a substrate, wherein said V group source is a compound represented by formula (1) given below: ##STR18## where X represents a V group element, n represents an integer from 1 to 3, and Y represents a group selected from the group consisting of a non-substituted amino group and an alkyl-substituted amino group bonded to the benzene ring at a position selected from the 2-, 4-, and 6-positions.
Claim 3
Dependent Claim
29 words
The method according to claim 1, wherein said III group source is an adduct of a III group hydride with an organic group coordinated to a III group element.
Claim 4
Dependent Claim
60 words
The method according to claim 1, wherein said III group source and said V group source are alternately supplied, said III group source being a compound selected from the group consisting of a III group compound having a phenyl group bonded to a III group element and a III group compound having an amine coordinated to a III group element.
Claim 5
Dependent Claim
13 words
The method according to claim 3, wherein said III group element is aluminum.
Claim 6
Independent Claim
96 words
A method of manufacturing a III-V group compound semiconductor in which a III group source and a V group source are decomposed to grow the III-V group compound semiconductor on a substrate, wherein said V group source is a compound represented by formula (2) given below: ##STR19## where X represents a V group element, m represents an integer of 1 or 2, and Y represents a group selected from the group consisting of a non-substituted amino group and an alkyl-substituted amino group bonded to the cyclopentadiene ring at a position selected from the 2-, and 4-positions.
Claim 7
Independent Claim
96 words
A method of manufacturing a III-V group compound semiconductor in which a III group source and a V group source are decomposed to grow the III-V group compound semiconductor on a substrate, wherein said V group source is a compound represented by formula (2) given below: ##STR19## where X represents a V group element, m represents an integer of 1 or 2, and Y represents a group selected from the group consisting of a non-substituted amino group and an alkyl-substituted amino group bonded to the cyclopentadiene ring at a position selected from the 2-, and 4-positions.
Claim 8
Dependent Claim
29 words
The method according to claim 5, wherein said III group source is an adduct of a III group hydride with an organic group coordinated to a III group element.
Claim 9
Dependent Claim
60 words
The method according to claim 5, wherein said III group source and said V group source are alternately supplied, said III group source being a compound selected from the group consisting of a III group compound having a phenyl group bonded to a III group element and a III group compound having an amine coordinated to a III group element.
Claim 10
Dependent Claim
13 words
The method according to claim 7, wherein said III group element is aluminum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |