Patent US5296404A successfully refreshed from Google Patents.
US5296404A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a thin film for a semiconductor device
Assignee: Tokyo Electron Ltd
•
Filing: 1991-10-24
•
Granted: 1994-03-22
•
Expires: 2011-10-24
Abstract
Abstract A method for forming a thin film, comprising the steps of: generating a plasma in a plasma generation chamber by action of an electric field generated by a microwave and a magnetic field generated by an exciting coil arranged around; and introducing the generated plasma into a reaction chamber, resulting in forming a thin film on a sample placed on a sample stage, wherein it is a chracteristic to form a metal nitride film on said sample, by introducing Ar, H2, and N2 gas into said plasma generation chamber, while introducing a metallic gas into said reaction chamber. By the method according to the present invention, it is possible to form a thin film having good Step Coverage on the contact hole, in addition, on the side wall of the contact hole a thinner film can be formed than that on the bottom. As a result, in the next step, filling in with interconnection materials can be surely performed, resulting in improving reliability of LSI devices.
Inventors
- 👤 Takashi Akahori
- 👤 Akira Tanihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:42
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
152 words
A method for generating a thin film, comprising the steps of: introducing Ar, H 2 and N 2 gas into a plasma generation chamber, and introducing TiCl 4 gas into one of the plasma generation chamber or a reaction chamber; generating a plasma in the plasma generation chamber by action of an electric field generated by a microwave and a magnetic field generated by an exciting coil arranged around the plasma generation chamber; and introducing the generated plasma into a reaction chamber by the magnetic field so as to form a thin Ti nitride film on a sample placed on a sample stage in the reaction chamber; wherein said sample is a substrate of a semiconductor device having an insulating film and having a contact hole thereon, the pressure in the reaction chamber is less that 2.0 mTorr, and the temperature of said substrate forming the sample is more than 450° C.
Claim 2
Independent Claim
152 words
A method for generating a thin film, comprising the steps of: introducing Ar, H 2 and N 2 gas into a plasma generation chamber, and introducing TiCl 4 gas into one of the plasma generation chamber or a reaction chamber; generating a plasma in the plasma generation chamber by action of an electric field generated by a microwave and a magnetic field generated by an exciting coil arranged around the plasma generation chamber; and introducing the generated plasma into a reaction chamber by the magnetic field so as to form a thin Ti nitride film on a sample placed on a sample stage in the reaction chamber; wherein said sample is a substrate of a semiconductor device having an insulating film and having a contact hole thereon, the pressure in the reaction chamber is less that 2.0 mTorr, and the temperature of said substrate forming the sample is more than 450° C.
Claim 3
Dependent Claim
29 words
A method according to claim 1, wherein, said pressure in the reaction chamber is less than 1.3 mTorr, and the Ti nitride film is formed on the contact hole.
Claim 4
Dependent Claim
27 words
A method according to claim 1 or 2, wherein the electric field is formed by applying RF to a microwave inlet window in the plasma generation chamber.
Claim 5
Dependent Claim
37 words
A method according to claim 1, wherein the thickness of the Ti nitride film formed on the bottom of the contact hole is thicker than the Ti nitride film on a side wall of the contact hole.
Claim 6
Dependent Claim
37 words
A method according to claim 2, wherein the thickness of the Ti nitride film formed on the bottom of the contact hole is thicker than the Ti nitride film on a side wall of the contact hole.
Claim 7
Dependent Claim
37 words
A method according to claim 1, wherein the thickness of the Ti nitride film formed on a side wall of the contact hole is 20-60% of the Ti nitride film on the bottom of the contact hole.
Claim 8
Dependent Claim
37 words
A method according to claim 2, wherein the thickness of the Ti nitride film formed on a side wall of the contact hole is 20-60% of the Ti nitride film on the bottom of the contact hole.
Claim 9
Dependent Claim
23 words
A method according to claim 1 or claim 2, wherein H 2 plasma treatment is carried out after forming the metal nitride film.
References Cited (Backward Citations)
US4401054A
Cited
US4570328A
Cited
US4973883A
Cited
US4800176A
Cited
US4878994A
Cited
US5080927A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-21 | 1997-09-20 | 1998-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-21 | 2001-09-20 | 2002-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-21 | 2005-09-20 | 2006-03-22 | $7700.00 | Window Closed / Lapsed |