Patent US5282922A successfully refreshed from Google Patents.
US5282922A
Expired / Lapsed
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Hybrid circuit structures and methods of fabrication
Assignee: Polycon
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Filing: 1992-03-11
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Granted: 1994-02-01
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Expires: 2012-03-11
Abstract
Abstract Hybrid circuit structures and methods of fabrication particularly suitable for the fabrication of high density multi-layer interconnects utilizing silicon substrates are disclosed. In accordance with the method, a layer of alumina is put down over the silicon substrate, typically having an oxide layer thereover, which layer of alumina acts as a blocking barrier to any subsequent plasma etching process for etching polymer layers thereover during the subsequent high density multilayer interconnect fabrication steps. Various representative high density multi-layer interconnect structures on silicon substrates and methods of forming the same are disclosed, including the inclusion of an adhesion enhancement layer over the layer of alumina to enhance the adhesion of a polymer which would not otherwise adhere well directly to the layer of alumina.
Inventors
- 👤 John J. Reche
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:24
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/698; H10W70/01; H10W70/05; H10W90/00; Y; Y10; Y10S; Y10S148/00; Y10S148/103; Y10S148/106
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
119 words
A method of patterning a polymer layer over a silicon substrate comprising the steps of; (a) providing a layer of material resistant to fluorine ion bearing plasma over an entire first surface of the silicon substrate; (b) applying a conductive layer over at least a portion of said resistant material wherein said conductive layer is entirely separated from the silicon substrate by said resistant material; (c) applying a polymer layer to said resistant material wherein said polymer layer is entirely separated from the silicon substrate by said resistant material; and, (d) etching a portion of said polymer layer with a fluorine ion bearing plasma, wherein said resistant material prevents said fluorine ion bearing plasma from etching the silicon substrate.
Claim 2
Independent Claim
119 words
A method of patterning a polymer layer over a silicon substrate comprising the steps of; (a) providing a layer of material resistant to fluorine ion bearing plasma over an entire first surface of the silicon substrate; (b) applying a conductive layer over at least a portion of said resistant material wherein said conductive layer is entirely separated from the silicon substrate by said resistant material; (c) applying a polymer layer to said resistant material wherein said polymer layer is entirely separated from the silicon substrate by said resistant material; and, (d) etching a portion of said polymer layer with a fluorine ion bearing plasma, wherein said resistant material prevents said fluorine ion bearing plasma from etching the silicon substrate.
Claim 3
Dependent Claim
39 words
The method of of claim 1 wherein the layer provided over the first surface of the silicon substrate in step (a) is a layer of material selected from the group consisting of aluminum oxide, hafnium oxide and tungsten tri-oxide.
Claim 4
Dependent Claim
25 words
The method of of claim 1 wherein the layer provided over the first surface of the silicon substrate in step (a) is provided by sputtering.
Claim 5
Dependent Claim
27 words
The method of of claim 1 wherein the layer provided over the first surface of the silicon substrate in step (a) is provided by ion beam deposition.
Claim 6
Dependent Claim
32 words
The method of claim 1 wherein the layer provided over the first surface of the silicon substrate in step (a) is provided by heating a sol-gel or organo-metallic in an oxidizing atmosphere.
Claim 7
Dependent Claim
37 words
The method of of claim 1 wherein the layer provided over the first surface of the silicon substrate in step (a) is provided by depositing a layer of aluminum over the silicon substrate and oxidizing the same.
Claim 8
Dependent Claim
33 words
The method of of claim 1 wherein the layer provided over the first surface of the silicon substrate in step (a) is provided by sputtering a layer of alumina onto the silicon substrate.
Claim 9
Independent Claim
24 words
The method of of any of claims 1, 2, 3, 4, 5, 6 or 7 wherein said conductive layer is a conductive ground plate.
Claim 10
Dependent Claim
15 words
The method of of claim 1 further comprising the step of patterning the conductive layer.
Claim 11
Independent Claim
35 words
The method of of claims 1, 2, 3, 4, 5, 6 or 7 further comprising the step of providing an adhesion layer over the layer formed in step (a) prior to forming the conductive layer.
Claim 12
Dependent Claim
16 words
The method of of claim 10 wherein the adhesion layer is a layer of silicon oxide.
Claim 13
Independent Claim
106 words
A method of patterning a polymer layer over a silicon substrate comprising the steps of; (a) sputtering a layer of alumina over an entire first surface of the silicon substrate; (b) applying a conductive layer over a portion of said layer of alumina; (c) applying a polymer layer over said conductive layer and said layer of alumina wherein said conductive and polymer layers are entirely separated from the silicon substrate by said layer of alumina; and (d) etching a portion of said polymer layer with a fluorine ion bearing plasma, wherein said layer of alumina prevents said fluorine ion bearing plasma from etching the silicon substrate.
Claim 14
Independent Claim
106 words
A method of patterning a polymer layer over a silicon substrate comprising the steps of; (a) sputtering a layer of alumina over an entire first surface of the silicon substrate; (b) applying a conductive layer over a portion of said layer of alumina; (c) applying a polymer layer over said conductive layer and said layer of alumina wherein said conductive and polymer layers are entirely separated from the silicon substrate by said layer of alumina; and (d) etching a portion of said polymer layer with a fluorine ion bearing plasma, wherein said layer of alumina prevents said fluorine ion bearing plasma from etching the silicon substrate.
Claim 15
Dependent Claim
15 words
The method of of claim 12 further comprising the step of patterning the conductive layer.
Claim 16
Independent Claim
35 words
The method of of claims 12 or 13 further comprising the step of providing an adhesion layer over the layer of alumina formed in step (a) prior to forming the conductive layer in step (b).
Claim 17
Dependent Claim
22 words
The method of fabricating a high density multichip interconnect of claim 14 wherein the adhesion layer is a layer of silicon oxide.
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