Patent EP0450671A1 successfully refreshed from Google Patents.
US4592801A
Expired / Lapsed
US
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Method of patterning thin film
Assignee: HGST Japan Ltd
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Filing: 1984-08-09
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Granted: 1986-06-03
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Expires: 2004-08-09
Abstract
Abstract A method of patterning a thin film by dry etching is disclosed in which, in order for a thin alumina film to have a predetermined pattern, the thin alumina film is selectively removed by carrying out the ion beam etching which uses a carbon fluoride gas, while using a photoresist film as a mask.
Inventors
- 👤 Shinichi Hara
- 👤 Shinji Narishige
- 👤 Tsuneo Yoshinari
- 👤 Mistuo Sato
- 👤 Katsuya Mitsuoka
- 👤 Makoto Morijiri
- 👤 Masanobu Hanazono
- 👤 Tetsuo Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:33
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; G; G11; G11B; G11B5/00; G11B5/127; G11B5/31; G11B5/3109; G11B5/3116; G11B5/3163
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
111 words
A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of: (a) forming a thin alumina film on the desired surface, including on the uneven portion; (b) forming a photoresist film of a predetermined pattern on said thin alumina film, including on the uneven portion; and (c) removing an exposed portion of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, while using said photoresist film as a mask, wherein an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas is equal to or greater than 600 V.
Claim 2
Independent Claim
111 words
A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of: (a) forming a thin alumina film on the desired surface, including on the uneven portion; (b) forming a photoresist film of a predetermined pattern on said thin alumina film, including on the uneven portion; and (c) removing an exposed portion of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, while using said photoresist film as a mask, wherein an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas is equal to or greater than 600 V.
Claim 3
Dependent Claim
44 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 1, wherein said carbon fluoride gas is one selected from a group consisting of CF 4 , C 2 F 6 , and CHF 3 .
Claim 4
Dependent Claim
148 words
A process of forming a thin film magnetic head comprising the steps of: (a) forming a thin alumina film on a substrate, said substrate including a permalloy layer to constitute the lower permalloy film of said thin film magnetic head; (b) forming a photoresist film of a predetermined pattern on said thin alumina film, said predetermined pattern including openings on the lower permalloy film; (c) removing exposed portions of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, herein an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas is equal to or greater than 600V, thereby exposing portions of said lower permalloy film while substantially not etching said lower permalloy film; and (d) forming an upper permalloy film so as to contact exposed portions of said lower permalloy film and to extend on said alumina film.
Claim 5
Dependent Claim
148 words
A process of forming a thin film magnetic head comprising the steps of: (a) forming a thin alumina film on a substrate, said substrate including a permalloy layer to constitute the lower permalloy film of said thin film magnetic head; (b) forming a photoresist film of a predetermined pattern on said thin alumina film, said predetermined pattern including openings on the lower permalloy film; (c) removing exposed portions of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, herein an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas is equal to or greater than 600V, thereby exposing portions of said lower permalloy film while substantially not etching said lower permalloy film; and (d) forming an upper permalloy film so as to contact exposed portions of said lower permalloy film and to extend on said alumina film.
Claim 6
Independent Claim
153 words
A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of: (a) forming a thin metal film on said desired surface, including on the uneven portion; (b) forming a thin alumina film on said thin metal film, including on the uneven portion; (c) forming a photoresist film of a predetermined pattern on said thin alumina film, including on the uneven portion; (d) removing an exposed portion of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, while using said photoresist film as a mask, wherein an ion accelerating voltage during the on beam etching technique using a carbon fluoride gas is equal to or greater than 600V; and (e) removing an exposed portion of said thin metal film by an ion beam etching technique using argon, while using said thin alumina film as a mask.
Claim 7
Independent Claim
153 words
A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of: (a) forming a thin metal film on said desired surface, including on the uneven portion; (b) forming a thin alumina film on said thin metal film, including on the uneven portion; (c) forming a photoresist film of a predetermined pattern on said thin alumina film, including on the uneven portion; (d) removing an exposed portion of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, while using said photoresist film as a mask, wherein an ion accelerating voltage during the on beam etching technique using a carbon fluoride gas is equal to or greater than 600V; and (e) removing an exposed portion of said thin metal film by an ion beam etching technique using argon, while using said thin alumina film as a mask.
Claim 8
Dependent Claim
40 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 4, wherein an ion accelerating voltage used in both of the ion beam etching techniques is equal to or greater than 600V.
Claim 9
Dependent Claim
44 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 4, wherein sadi carbon fluoride gas is one selected from a group consisting of CF 4 , C 2 F 6 , and CHF 3 .
Claim 10
Dependent Claim
42 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 4, wherein said thin metal film is made of a metal selected from a group consisting of iron, nickel, an iron-nickel alloy, and chromium.
Claim 11
Independent Claim
130 words
A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of: (a) forming a thin metal film on the desired surface, including on the uneven portion; (b) forming a thin alumina film of a predetermined pattern on said thin metal film, including on the uneven portion, the thin alumina film of a predetermined pattern being formed utilizing an ion beam etching technique using a carbon fluoride gas, with an ion accelerating voltage used in the ion beam etching technique using carbon fluoride gas being equal to or greater tthan 600V; and (c) removing an exposed portion of said thin metal film by an ion beam etching technique using argon, while using said thin alumina film as a mask.
Claim 12
Independent Claim
130 words
A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of: (a) forming a thin metal film on the desired surface, including on the uneven portion; (b) forming a thin alumina film of a predetermined pattern on said thin metal film, including on the uneven portion, the thin alumina film of a predetermined pattern being formed utilizing an ion beam etching technique using a carbon fluoride gas, with an ion accelerating voltage used in the ion beam etching technique using carbon fluoride gas being equal to or greater tthan 600V; and (c) removing an exposed portion of said thin metal film by an ion beam etching technique using argon, while using said thin alumina film as a mask.
Claim 13
Dependent Claim
42 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 8, wherein said thin metal film is made of a metal selected from a group consisting of iron, nickel, an iron-nickel alloy, and chromium.
Claim 14
Independent Claim
146 words
A method of patterning a thin film mainly consisting of a permalloy, chromium or other metals, having uneven portions, comprising the steps of: successively depositing a first film mainly consisting of permalloy, chromium or other metals on a substrate, said first film having uneven portions, a second film mainly consisting of alumina on the first film, including on the uneven portions thereof, and a third film including a photoresist layer on the second film, including on the uneven portions; exposing and patterning said third film; etching said second film using said patterned third film as a mask in an ion-beam etching technique using carbon fluoride, with an ion accelerating voltage used in the ion-beam etching technique using carbon fluoride being equal to or greater than 600V; and etching said first film using said etched second film as a mask in an ion-beam etching technique using argon.
Claim 15
Independent Claim
146 words
A method of patterning a thin film mainly consisting of a permalloy, chromium or other metals, having uneven portions, comprising the steps of: successively depositing a first film mainly consisting of permalloy, chromium or other metals on a substrate, said first film having uneven portions, a second film mainly consisting of alumina on the first film, including on the uneven portions thereof, and a third film including a photoresist layer on the second film, including on the uneven portions; exposing and patterning said third film; etching said second film using said patterned third film as a mask in an ion-beam etching technique using carbon fluoride, with an ion accelerating voltage used in the ion-beam etching technique using carbon fluoride being equal to or greater than 600V; and etching said first film using said etched second film as a mask in an ion-beam etching technique using argon.
Claim 16
Dependent Claim
42 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 1, wherein the thin alumina film is formed by sputtering to provide a uniform film on the desired surface, including on the uneven portion.
Claim 17
Dependent Claim
58 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 11, wherein said photoresist film of a predetermined pattern has a non-uniform thickness, said photoresist film being thicker at a lower portion of the uneven portion of the desired surface, and thinner at a higher portion of the uneven portion.
Claim 18
Dependent Claim
58 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 1, wherein said photoresist film of a predetermined pattern has a non-uniform thickness, said photoresist film being thicker at a lower portion of the uneven portion of the desired surface, and thinner at a higher portion of the uneven portion.
Claim 19
Independent Claim
179 words
A method of forming a thin film magnetic head, comprising the steps of: (a) forming a thin alumina film on the top surface of a substrate; said substrate comprising lower and upper permalloy films for forming a magnetic circuit, a coil conductor disposed between the permalloy films and crossing the magnetic circuit, and a gap member interposed between the permalloy films for forming a magnetic gap, said substrate having an uneven surface; said thin alumina film being formed on the upper permalloy film, including on said uneven surface; (b) forming a photoresist film of a predetermined pattern on said thin alumina film, including on said uneven surface; (c) removing an exposed portion of the thin alumina film by an ion beam etching technique using a carbon fluoride gas, wherein an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas is equal to or greater than 600V; and (d) removing an exposed portion of the upper permalloy film by an ion beam etching technique using argon, while using said thin alumina film as a mask.
Claim 20
Independent Claim
179 words
A method of forming a thin film magnetic head, comprising the steps of: (a) forming a thin alumina film on the top surface of a substrate; said substrate comprising lower and upper permalloy films for forming a magnetic circuit, a coil conductor disposed between the permalloy films and crossing the magnetic circuit, and a gap member interposed between the permalloy films for forming a magnetic gap, said substrate having an uneven surface; said thin alumina film being formed on the upper permalloy film, including on said uneven surface; (b) forming a photoresist film of a predetermined pattern on said thin alumina film, including on said uneven surface; (c) removing an exposed portion of the thin alumina film by an ion beam etching technique using a carbon fluoride gas, wherein an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas is equal to or greater than 600V; and (d) removing an exposed portion of the upper permalloy film by an ion beam etching technique using argon, while using said thin alumina film as a mask.
Claim 21
Dependent Claim
83 words
A process of forming a thin film magnetic head according to claim 14, wherein after forming the thin alumina film but prior to forming the photoresist film, a metal film is formed on the thin alumina film, with an exposed portion of said metal film being removed after forming the photoresist film of a predetermined pattern, and wherein the metal film, after removal of the exposed portion thereof, is used as a mask in removing an exposed portion of the thin alumina film.
Claim 22
Dependent Claim
31 words
A process of forming a thin film magnetic head according to claim 14, wherein portions of the thin alumina film not removed in step (c) is retained in said magnetic head.
Claim 23
Dependent Claim
20 words
A process of forming a thin film magnetic head according to claim 14, wherein said gap is made of alumina.
Claim 24
Independent Claim
146 words
A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of: (a) forming a thin alumina film on the desired surface including on the uneven portion; (b) forming a thin metal film on the thin alumina film, including on the uneven portion; (c) forming a photoresist film of a predetermined pattern on the thin metal film, including on the uneven portion; (d) removing an exposed portion of the thin metal film, thereby exposing a portion of the thin alumina film; and (e) removing an exposed portion of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, while using said thin metal film as a mask, with an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas being equal to or greater than 600V.
Claim 25
Independent Claim
146 words
A method of forming a thin film of a predetermined pattern on a desired surface having an uneven portion, comprising the steps of: (a) forming a thin alumina film on the desired surface including on the uneven portion; (b) forming a thin metal film on the thin alumina film, including on the uneven portion; (c) forming a photoresist film of a predetermined pattern on the thin metal film, including on the uneven portion; (d) removing an exposed portion of the thin metal film, thereby exposing a portion of the thin alumina film; and (e) removing an exposed portion of said thin alumina film by an ion beam etching technique using a carbon fluoride gas, while using said thin metal film as a mask, with an ion accelerating voltage during the ion beam etching technique using a carbon fluoride gas being equal to or greater than 600V.
Claim 26
Dependent Claim
31 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 18, wherein said thin metal film is thinner than the thin alumina film.
Claim 27
Dependent Claim
28 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 19, wherein said desired surface is a further metal film.
Claim 28
Dependent Claim
31 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 20, wherein said thin alumina film is thinner than said further metal film.
Claim 29
Dependent Claim
40 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 18, wherein the thin metal film is made of a material selected from the group consisting of chromium, iron, nickel and permalloy.
Claim 30
Dependent Claim
46 words
A method of forming a thin film of a predetermined pattern on a desired surface according to claim 18, wherein after removing an exposed portion of the thin metal film and before removing an exposed portion of the thin alumina film, the photoresist film is removed.
References Cited (Backward Citations)
US4288283A
Cited
US4390394A
Cited
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