Method for producing an opening in a layered semiconductor structure or a contact hole in an integrated circuit or DRAM

Claim 1

A method for producing an opening in a layered semiconductor structure, which comprises, on a structure at a site intended for an opening: a) producing an auxiliary layer with respect to which polysilicon is selectively etchable on the structure at the site intended for the opening; b) producing a place-saver of polysilicon which is selectively etchable with respect to the structure under the place-saver and to a material adjacent the site; c) producing a passivation layer comprising SiO 2 , with respect to which the place-saver is selectively etchable, over the entire surface of the structure having the place-saver and forming a portion of the passivation layer above the place-saver relatively thinner than remaining portions of the passivation layer; d) back-etching the passivation layer over the entire surface area and at least partially removing the passivation layer above the place-saver; and e) removing the place-saver by etching selectively with respect to the passivation layer.

Claim 2

A method for producing an opening in a layered semiconductor structure, which comprises, on a structure at a site intended for an opening: a) producing an auxiliary layer with respect to which polysilicon is selectively etchable on the structure at the site intended for the opening; b) producing a place-saver of polysilicon which is selectively etchable with respect to the structure under the place-saver and to a material adjacent the site; c) producing a passivation layer comprising SiO 2 , with respect to which the place-saver is selectively etchable, over the entire surface of the structure having the place-saver and forming a portion of the passivation layer above the place-saver relatively thinner than remaining portions of the passivation layer; d) back-etching the passivation layer over the entire surface area and at least partially removing the passivation layer above the place-saver; and e) removing the place-saver by etching selectively with respect to the passivation layer.

Claim 7

A method for producing contact holes for overlapping contacts in an integrated circuit, which comprises, on an integrated circuit at a site intended for an opening: a) producing an auxiliary layer with respect to which polysilicon is selectively etchable on the structure at the site; b) producing a place-saver comprising polysilicon which is selectively etchable with respect to the integrated circuit under the place-saver and with respect to a material adjacent the site; c) producing a passivation layer comprising SiO 2 , with respect to which the polysilicon is selectively etchable, over the entire surface of the integrated circuit having the place-saver and forming a portion of the passivation layer above the place-saver relatively thinner than remaining portions of the passivation layer; d) back-etching the passivation layer over the entire surface area; e) forming an opening in the passivation layer for forming the contact hole by at least partially removing the passivation layer above the place-saver; and f) removing the place-saver by etching selectively with respect to the passivation layer.

Claim 8

A method for producing contact holes for overlapping contacts in an integrated circuit, which comprises, on an integrated circuit at a site intended for an opening: a) producing an auxiliary layer with respect to which polysilicon is selectively etchable on the structure at the site; b) producing a place-saver comprising polysilicon which is selectively etchable with respect to the integrated circuit under the place-saver and with respect to a material adjacent the site; c) producing a passivation layer comprising SiO 2 , with respect to which the polysilicon is selectively etchable, over the entire surface of the integrated circuit having the place-saver and forming a portion of the passivation layer above the place-saver relatively thinner than remaining portions of the passivation layer; d) back-etching the passivation layer over the entire surface area; e) forming an opening in the passivation layer for forming the contact hole by at least partially removing the passivation layer above the place-saver; and f) removing the place-saver by etching selectively with respect to the passivation layer.

Claim 9

A method for producing contact holes for bit line contacts in DRAMs, which comprises, on a DRAM at a site intended for an opening: a) producing a place-saver from polysilicon to be selectively etched to the DRAM under the first material and to a material adjacent the site; b) producing a passivation layer of an SiO 2 -containing material to which the polysilicon is selectively etchable, over the entire surface of the DRAM having the place-saver and forming a portion of the passivation layer above the place-saver relatively thinner than remaining portions of the passivation layer; c) back-etching the passivation layer over the entire surface area and forming an opening in the passivation layer for forming the contact hole by at least partially removing the passivation layer above the place-saver; and d) removing the place-saver by etching selectively to the passivation layer.

Claim 10

A method for producing contact holes for bit line contacts in DRAMs, which comprises, on a DRAM at a site intended for an opening: a) producing a place-saver from polysilicon to be selectively etched to the DRAM under the first material and to a material adjacent the site; b) producing a passivation layer of an SiO 2 -containing material to which the polysilicon is selectively etchable, over the entire surface of the DRAM having the place-saver and forming a portion of the passivation layer above the place-saver relatively thinner than remaining portions of the passivation layer; c) back-etching the passivation layer over the entire surface area and forming an opening in the passivation layer for forming the contact hole by at least partially removing the passivation layer above the place-saver; and d) removing the place-saver by etching selectively to the passivation layer.

Claim 11

A method for producing a layered semiconductor structure with an opening, which comprises, a) producing a structure with a site intended for an opening and a material adjacent the site; b) producing a place-saver from polysilicon to be selectively etched to the structure under the polysilicon and to the material adjacent the site; c) producing a layer of SiO 2 -containing material to which the polysilicon is selectively etchable, over the entire surface of the structure having the place-saver and forming a portion of the passivation layer above the place-saver relatively thinner than remaining portions of the passivation layer; d) back-etching the passivation layer over the entire surface area and forming the opening in the passivation layer by at least partially removing the passivation layer above the place-saver; and e) removing the place-saver by selective etching selectively to the passivation layer.

Claim 12

A method for producing a layered semiconductor structure with an opening, which comprises, a) producing a structure with a site intended for an opening and a material adjacent the site; b) producing a place-saver from polysilicon to be selectively etched to the structure under the polysilicon and to the material adjacent the site; c) producing a layer of SiO 2 -containing material to which the polysilicon is selectively etchable, over the entire surface of the structure having the place-saver and forming a portion of the passivation layer above the place-saver relatively thinner than remaining portions of the passivation layer; d) back-etching the passivation layer over the entire surface area and forming the opening in the passivation layer by at least partially removing the passivation layer above the place-saver; and e) removing the place-saver by selective etching selectively to the passivation layer.