US5264380A
Expired / Lapsed
US
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Method of making an MOS transistor having improved transconductance and short channel characteristics
Assignee: Motorola Solutions Inc
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Filing: 1989-12-18
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Granted: 1993-11-23
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Expires: 2009-12-18
Abstract
Abstract A transistor is described having reduced series resistance and a reduced peak lateral electric field. The peak lateral field is reduced by forming an image charge in the surface of the substrate underlying the edges of the transistor gate electrode. The image charge is created by impregnating portions of an oxide layer overlying the source and drain regions with an impurity having the same conductivity as that of the underlying substrate. The depletion region formed in the substrate by the image charge provides a graduated electric filed in the channel preventing hot carrier injection into the gate oxide and increasing the breakdown voltage. The image charge is of an opposite conductivity to that of the substrate and is thus composed of minority carriers. The high concentration of majority carriers near the surface of the substrate lower the series resistance of the transistor thereby increasing the drive current.
Inventors
- 👤 James R. Pfiester
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:28
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D30/605; H10D64/00; H10D64/01; H10D64/021; H10P; H10P30/00; H10P30/40; H10P32/00; H10P32/20
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
141 words
A method for forming an MOS transistor having improved transconductance and short channel characteristics comprising: providing a semiconductor substrate region of a first conductivity type having a gate oxide formed thereon; forming a gate electrode on a portion of said gate oxide leaving an exposed portion of said gate oxide; oxidizing said gate electrode to round the edges of said gate electrode and to reduce the electric field near the edges; implanting an electropositive impurity species of a first conductivity type selected from the group consisting of Rubidium and Cesium into said exposed portion of said gate oxide wherein a charge of a second conductivity type is induced in the surface of said substrate region; forming a sidewall spacer adjacent said oxidized gate electrode; and forming regions of a second conductivity type in said substrate region aligned to said sidewall spacer.
Claim 2
Independent Claim
141 words
A method for forming an MOS transistor having improved transconductance and short channel characteristics comprising: providing a semiconductor substrate region of a first conductivity type having a gate oxide formed thereon; forming a gate electrode on a portion of said gate oxide leaving an exposed portion of said gate oxide; oxidizing said gate electrode to round the edges of said gate electrode and to reduce the electric field near the edges; implanting an electropositive impurity species of a first conductivity type selected from the group consisting of Rubidium and Cesium into said exposed portion of said gate oxide wherein a charge of a second conductivity type is induced in the surface of said substrate region; forming a sidewall spacer adjacent said oxidized gate electrode; and forming regions of a second conductivity type in said substrate region aligned to said sidewall spacer.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein said sidewall spacer is comprised of silicon nitride.
Claim 4
Dependent Claim
23 words
The method of claim 1 further comprising oxidizing said substrate to form an oxide layer overlying said regions of a second conductivity type.
Claim 5
Independent Claim
115 words
A method for forming an MOS transistor having improved transconductance and short channel characteristics comprising: providing an N-type semiconductor substrate region having a gate oxide formed thereon; forming a gate electrode on a portion of said gate oxide leaving an exposed portion of said gate oxide; oxidizing said gate electrode to round the edges of said gate electrode and to reduce the electric field near the edges; implanting iodine into said exposed portion of said gate oxide wherein a P-type conductivity type region is induced in the surface of said substrate region; forming a sidewall spacer adjacent said oxidized gate electrode; and forming P-type conductivity regions in said substrate region aligned to said sidewall spacer.
Claim 6
Independent Claim
115 words
A method for forming an MOS transistor having improved transconductance and short channel characteristics comprising: providing an N-type semiconductor substrate region having a gate oxide formed thereon; forming a gate electrode on a portion of said gate oxide leaving an exposed portion of said gate oxide; oxidizing said gate electrode to round the edges of said gate electrode and to reduce the electric field near the edges; implanting iodine into said exposed portion of said gate oxide wherein a P-type conductivity type region is induced in the surface of said substrate region; forming a sidewall spacer adjacent said oxidized gate electrode; and forming P-type conductivity regions in said substrate region aligned to said sidewall spacer.
Claim 7
Independent Claim
127 words
A method for forming an LDD structure in an MOS transistor comprising: providing a silicon substrate region of a first conductivity type having a gate oxide formed thereon; forming a gate electrode on said gate oxide; forming a first region of a second conductivity type in said substrate region aligned to said gate electrode; implanting into portions of said gate oxide overlying said first region of said substrate an electropositive impurity species of a first conductivity type selected from the group consisting of Rubidium and Cesium inducing a charge of a second conductivity type in the surface of said substrate region; forming sidewall spacers adjacent said gate electrode; and forming a second region of a second conductivity type in said substrate region aligned to said sidewall spacers.
Claim 8
Independent Claim
127 words
A method for forming an LDD structure in an MOS transistor comprising: providing a silicon substrate region of a first conductivity type having a gate oxide formed thereon; forming a gate electrode on said gate oxide; forming a first region of a second conductivity type in said substrate region aligned to said gate electrode; implanting into portions of said gate oxide overlying said first region of said substrate an electropositive impurity species of a first conductivity type selected from the group consisting of Rubidium and Cesium inducing a charge of a second conductivity type in the surface of said substrate region; forming sidewall spacers adjacent said gate electrode; and forming a second region of a second conductivity type in said substrate region aligned to said sidewall spacers.
Claim 9
Dependent Claim
14 words
The method of claim 5 wherein said sidewall spacer is comprised of silicon nitride.
Claim 10
Dependent Claim
14 words
The method of claim 5 further comprising oxidizing a portion of said gate electrode.
Claim 11
Independent Claim
173 words
A method of forming an MOS transistor having improved immunity to short channel effects comprising: providing a silicon substrate region of a first conductivity type having a gate oxide formed thereon; forming a gate electrode on said gate oxide, said gate electrode being defined by distinct edges; oxidizing said substrate and said gate electrode to form a oxide layer overlying said substrate and said gate electrode, wherein said oxidizing rounds the edges of said gate electrode and becomes integral with said gate oxide on said substrate; imparting into said oxide layer an electropositive impurity species selected from the group consisting of Rubidium and Cesium of a first conductivity type inducing a charge of a second conductivity type in the surface of said substrate region; laterally diffusing said impurity species in said oxide layer such that said impurity species extends under an edge portion of said gate electrode; forming sidewall spacers adjacent said oxidized gate electrode; and forming a region of a second conductivity type in said substrate region aligned to said sidewall spacers.
Claim 12
Independent Claim
173 words
A method of forming an MOS transistor having improved immunity to short channel effects comprising: providing a silicon substrate region of a first conductivity type having a gate oxide formed thereon; forming a gate electrode on said gate oxide, said gate electrode being defined by distinct edges; oxidizing said substrate and said gate electrode to form a oxide layer overlying said substrate and said gate electrode, wherein said oxidizing rounds the edges of said gate electrode and becomes integral with said gate oxide on said substrate; imparting into said oxide layer an electropositive impurity species selected from the group consisting of Rubidium and Cesium of a first conductivity type inducing a charge of a second conductivity type in the surface of said substrate region; laterally diffusing said impurity species in said oxide layer such that said impurity species extends under an edge portion of said gate electrode; forming sidewall spacers adjacent said oxidized gate electrode; and forming a region of a second conductivity type in said substrate region aligned to said sidewall spacers.
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