US5254867A
Expired / Lapsed
US
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Semiconductor devices having an improved gate
Assignee: TE A CORP OF JAPAN KK
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Filing: 1991-07-08
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Granted: 1993-10-19
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Expires: 2011-07-08
Abstract
Abstract A MOSFET comprises a silicon substrate 1 having a source/drain region 7b formed in a surface region thereof, an insulating film 3 formed of silicon oxide, and a gate electrode 4a. The side surface region of the electrode 4a is covered with an insulating film 6 formed of silicon nitride. The insulating film 6 has an extended portion interposed between the electrode 4a and the insulating film 3 in a manner to surround the lower corner portion 4b of the electrode. Since the insulating film 6 has a dielectric constant larger than that of the insulating film 3, it is possible to suppress the electric field intensity at the lower corner portion 4b of the electrode.
Inventors
- 👤 Sanae Fukuda
- 👤 Naoyuki Shigyo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01342; H10D64/01344; H10D64/01346; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
145 words
A semiconductor device, comprising: a semiconductor substrate; an electrode formed above the substrate, said electrode having a corner portion facing the substrate and a side surface contiguous to the corner portion; and a laminate structure positioned between the substrate and the electrode and formed of an n-number of insulating films consisting of a first insulating film near the substrate to an n-th insulating film near the electrode, said laminate structure extending to cross a straight line joining the substrate and the corner portion of the electrode, and the values of the dielectric constant of the laminated insulating film progressively increasing with increase in the laminated order of the insulating films; wherein said n-number is three or more, and said laminate structures includes at least three insulating films formed of silicon oxide, silicon nitride, and tantalum oxide, respectively, and arranged in this order from the substrate.
Claim 2
Dependent Claim
145 words
A semiconductor device, comprising: a semiconductor substrate; an electrode formed above the substrate, said electrode having a corner portion facing the substrate and a side surface contiguous to the corner portion; and a laminate structure positioned between the substrate and the electrode and formed of an n-number of insulating films consisting of a first insulating film near the substrate to an n-th insulating film near the electrode, said laminate structure extending to cross a straight line joining the substrate and the corner portion of the electrode, and the values of the dielectric constant of the laminated insulating film progressively increasing with increase in the laminated order of the insulating films; wherein said n-number is three or more, and said laminate structures includes at least three insulating films formed of silicon oxide, silicon nitride, and tantalum oxide, respectively, and arranged in this order from the substrate.
Claim 3
Dependent Claim
59 words
The semiconductor device according to claim 1, wherein said semiconductor device is a MISFET constructed such that source and drain regions are formed in a surface region of the substrate, said electrode acts as a gate electrode relative to said source and drain regions, and said first, laminate structure is positioned between the gate electrode and the source/drain regions.
Claim 4
Dependent Claim
103 words
A semiconductor device, comprising: a semiconductor substrate; an electrode formed above the substrate, said electrode having corner portion facing the substrate and said wall portion contiguous to the corner portion; first insulating film means formed between the substrate and the electrode; and side wall insulating film means formed to cover the side wall portion of the electrode and having an extended portion positioned between the electrode and the first insulating film means in a manner to surround the corner portion of the electrode, the dielectric constant of the side wall insulating film means being larger than that of the first insulating film means.
Claim 5
Dependent Claim
103 words
A semiconductor device, comprising: a semiconductor substrate; an electrode formed above the substrate, said electrode having corner portion facing the substrate and said wall portion contiguous to the corner portion; first insulating film means formed between the substrate and the electrode; and side wall insulating film means formed to cover the side wall portion of the electrode and having an extended portion positioned between the electrode and the first insulating film means in a manner to surround the corner portion of the electrode, the dielectric constant of the side wall insulating film means being larger than that of the first insulating film means.
Claim 6
Dependent Claim
62 words
The semiconductor device according to claim 3, wherein said semiconductor device is a MISFET which is constructed such that source and drain regions are formed in a surface region of the substrate, said electrode acts as a gate electrode relative to the source and drain regions, and said first insulating film means is positioned between the gate electrode and the source/drain regions.
Claim 7
Dependent Claim
36 words
The semiconductor device according to claim 4, wherein said substrate is formed of silicon, said first insulating film means is formed of silicon oxide, and said side wall insulating film means is formed of silicon nitride.
Claim 8
Dependent Claim
44 words
The semiconductor device according to claim 3, wherein said semiconductor device is a MOS type capacitor, said electrode is formed of silicon, said first insulating film means is formed of silicon oxide, and said side wall insulating film means is formed of silicon nitride.
Claim 9
Dependent Claim
126 words
A semiconductor device, comprising: a semiconductor substrate; an electrode formed above the substrate, said electrode having corner portion facing the substrate and side surface contiguous to the corner portion; a first insulating film formed between the substrate and the electrode, and extending laterally beyond the side surface of the electrode; a second insulating film formed between the first insulating film and the electrode and in contact with the electrode, and having a side surface aligned with the side surface of the electrode; a side insulating film formed in contact with the side surfaces of the electrode and second insulating film; wherein said side insulating film has a dielectric constant smaller than that of the second insulating film, but larger than that of the first insulating film.
Claim 10
Dependent Claim
126 words
A semiconductor device, comprising: a semiconductor substrate; an electrode formed above the substrate, said electrode having corner portion facing the substrate and side surface contiguous to the corner portion; a first insulating film formed between the substrate and the electrode, and extending laterally beyond the side surface of the electrode; a second insulating film formed between the first insulating film and the electrode and in contact with the electrode, and having a side surface aligned with the side surface of the electrode; a side insulating film formed in contact with the side surfaces of the electrode and second insulating film; wherein said side insulating film has a dielectric constant smaller than that of the second insulating film, but larger than that of the first insulating film.
Claim 11
Dependent Claim
36 words
The semiconductor device according to claim 7, wherein said first insulating film is formed of silicon oxide, said second insulating film is formed of tantalum oxide, and each side insulating film is formed of silicon nitride.
Claim 12
Dependent Claim
61 words
The semiconductor device according to claim 7, wherein said semiconductor device is a MISFET constructed such that source and drain regions are formed in a surface region of the substrate, said electrode acts as a gate electrode relative to said source and drain regions, and said first and second insulating films are positioned between the gate electrode and the source/drain regions.
Claim 13
Dependent Claim
36 words
The semiconductor device according to claim 9, wherein said first insulating film is formed of silicon oxide, said second insulating film is formed of tantalum oxide, and said side insulating film is formed of silicon nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-18 | 1997-04-19 | 1997-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-18 | 2001-04-19 | 2001-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-18 | 2005-04-19 | 2005-10-19 | $7700.00 | Window Closed / Lapsed |