US3694700A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit including field effect transistor and cerment resistor
Assignee: National Aeronautics and Space Administration
•
Filing: 1971-02-19
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Granted: 1972-09-26
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Expires: 1991-02-19
Abstract
Abstract A single integrated circuit chip includes a field effect transistor having an insulating layer of silicon nitride covering an interface between a silicon substrate and a silicon oxide layer. A thin film cermet resistor on the nitride layer is connected to an ohmic contact of a field effect transistor electrode.
Inventors
- 👤 George A Brown
- 👤 Victor Harrap
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:25
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D89/00; H10D99/00
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
19 words
The circuit of claim 1 wherein the substrate is silicon and the firsT dielectric layer is a silicon oxide.
Claim 2
Dependent Claim
18 words
The circuit of claim 1 wherein the substrate is silicon and the first dielectric layer is silicon dioxide.
Claim 3
Dependent Claim
11 words
The circuit of claim 1 wherein the cermet resistor is Cr-SiO
Claim 4
Dependent Claim
21 words
The circuit of claim 4 wherein the Cr-SiO resistor is a film having a thickness on the order of 500 angstroms.
Claim 5
Dependent Claim
24 words
The circuit of claim 1 wherein the substrate is silicon and the first and second dielectric layers are silicon oxide and silicon nitride, respectively.
Claim 6
Dependent Claim
36 words
The circuit of claim 6 wherein the silicon oxide layer covering the channel has a thickness on the order of 250 angstroms, and the silicon nitride layer has a thickness on the order of 500 angstroms.
Claim 7
Dependent Claim
25 words
The circuit of claim 7 wherein the silicon oxide layer covering the substrate, other than the channel, has a thickness of at least 2,500 angstroms.
Claim 8
Dependent Claim
24 words
The circuit of claim 8 wherein the cermet resistor is Cr-SiO formed as a film having a thickness on the order of 500 angstroms.
Claim 9
Dependent Claim
11 words
The circuit of claim 6 wherein the cermet resistor is Cr-SiO
Claim 10
Dependent Claim
19 words
The circuit of claim 9 wherein the resistor has a resistivity on the order of 4,500 ohms per square.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-26 | 1976-03-27 | 1976-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-26 | 1980-03-27 | 1980-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-26 | 1984-03-27 | 1984-09-26 | $7700.00 | Window Closed / Lapsed |