Semiconductor device passivated with rare earth oxide layer

Claim 2

A semiconductor device according to claim 1 wherein said insulator film includes a plurality of layers at least one of the layers consists of yttrium oxide.

Claim 3

A semiconductor device according to claim 1 wherein said device is a diode having a region of a conductivity type opposite to that of said semiconductor substrate formed within said substrate, and an electrode secured to said region.

Claim 4

A semiconductor device according to claim 1 wherein said insulator film comprises a first layer of SiO2 and a second layer overlaying said first layer, said second layer comprises an oxide film essentially consisting of at least one oxide selected from the group consisting of Y2O3, Sc2O3, Sm2O3, Tb2O3 and Dy2O3.

Claim 5

A semiconductor device according to claim 1 wherein said insulator film comprises a single layer of oxide film essentially consisting of at least one oxide selected from the group consisting of Y2O3, Sc2O3, Sm2O3, Tb2O3 and Dy2O3.

Claim 6

A semiconductor device according to claim 1 wherein said insulator film comprises a plurality of layers, and at least one of said layers comprises an oxide layer essentially consisting of at least one oxide selected from the group consisting of Y2O3, Sc2O3, Sm2O3, Tb2O3 and Dy2O3.

Claim 7

A semiconductor device according to claim 1 wherein said insulating film comprises a first layer of silicon dioxide formed on a main surface of said semiconductor substrate, a second layer formed on said first layer and comprised of an oxide layer selected from the group essentially consisting of Y2O3, Sc2O3, Sm2O3, Tb2O3, and Dy2O3, and a third layer overlying said second layer and selected from the group consisting of SiO2 and Si3N4.

Claim 8

A semiconductor device according to claim 1 which comprises an insulated-gate field effect transistor consisting of a source region and a drain region each formed in spaced relationship on said substrate and of opposite conductivity type thereto; a conduction channel formed in the substrate so as to be disposed between the source and drain regions; PN junctions formed between the substrate and the source region as well as between the substrate and the drain region to define interfaces therebetween respectively, said junction having the respective opposite ends exposed on the surface of thE substrate and covered with said insulator film which in turn covers the surface portion of the substrate facing at least the conduction channel; source and drain electrodes secured to the source and drain regions respectively; and a gate electrode secured to the insulator film portion facing the conduction channel.

Claim 9

A semiconductor device according to claim 1 which comprises a planar transistor consisting of a base region formed within a substrate, said substrate acting as a collector region, said base region being of opposite conductivity type thereto, and an emitter region formed within the base region and of the same conductivity type as that of the substrate; P-N junctions formed between the substrate and the base region as well as between the base and emitter regions respectively, said junctions having the respective opposite ends exposed on one surface of the substrate and covered with said insulating film; and base and emitter electrodes secured to the base and emitter regions respectively, and a collector electrode secured to the other surface of the substrate.