US4062040A
Expired / Lapsed
US
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Field effect transistor structure and method for making same
Assignee: International Business Machines Corp
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Filing: 1977-03-24
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Granted: 1977-12-06
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Expires: 1997-03-24
Abstract
Abstract An improved field effect transistor structure which reduces a leakage phenomenon, termed the "sidewalk" effect, between the semiconductor substrate and a conductive silicon dioxide layer disposed over the substrate. The improvement comprises forming a layer of highly resistive, silicon dioxide or silicon oxynitride, which is between the conductive oxide and the silicon nitride layer which forms a portion of the gate insulator for the field effect transistor.
Inventors
- 👤 Shakir Ahmed Abbas
- 👤 Robert Charles Dockerty
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/01346; H10D64/60; H10D64/605; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
102 words
In a field effect transistor which includes a composite silicon dioxide-silicon nitride insulating layer over the active regions thereof; a field shield electrode of polycrystalline silicon over a portion of said composite layer; a conductive silicon dioxide layer over the upper and sidewall surfaces of said field shield; and a gate electrode disposed over said composite layer and insulated from said field shield by said conductive silicon dioxide layer; the improvement comprising; a layer of highly resistive material disposed between said conductive silicon dioxide layer and said silicon nitride layer; said material selected from group consisting of silicon oxynitride and silicon dioxide.
Claim 2
Dependent Claim
102 words
In a field effect transistor which includes a composite silicon dioxide-silicon nitride insulating layer over the active regions thereof; a field shield electrode of polycrystalline silicon over a portion of said composite layer; a conductive silicon dioxide layer over the upper and sidewall surfaces of said field shield; and a gate electrode disposed over said composite layer and insulated from said field shield by said conductive silicon dioxide layer; the improvement comprising; a layer of highly resistive material disposed between said conductive silicon dioxide layer and said silicon nitride layer; said material selected from group consisting of silicon oxynitride and silicon dioxide.
Claim 3
Dependent Claim
24 words
A field effect transistor as in claim 1 wherein said highly resistive material is also disposed between said silicon nitride and said gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-12-05 | 1981-06-06 | 1981-12-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-12-05 | 1985-06-06 | 1985-12-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-12-05 | 1989-06-06 | 1989-12-06 | $7700.00 | Window Closed / Lapsed |