Composite substrate and process for producing the same

Claim 2

A process for producing a composite substrate for electronic devices such as integrated circuits and semiconductors, comprising: a first step wherein, initially, a vaporized material is deposited, and an accelerated ion beam is allowed to impinge on a metal substrate in a vacuum environment and, thereafter, said vaporized material is continued to be deposited thereon so as to form an electrically insulating ceramic layer on said metal substrate and a mixed layer in an area near the interface between said metal substrate and said ceramic layer, said mixed layer being composed of the metal and ceramic materials of the layers situated on both sides thereof; and a second step wherein, initially, a metal vapor is deposited, and an accelerated ionized inert gas is simultaneously allowed to impinge on the ceramic layer formed in the first step and, thereafter, said metal vapor alone is continued to be deposited thereon so as to form a metal layer on said ceramic layer and a mixed layer in an area near the interface between said ceramic layer and said metal layer, said mixed layer being composed of the ceramic and metal materials of the layers situated on both sides thereof.

Claim 3

A process according to claim 1 wherein said vaporized material is comprised of at least one material selected from a group consisting of B, Al, P and C, said accelerated ion beam is comprised of at least one material selected from a group consisting of N ion, P ion, B ion, C ion and an ionized inert gas, and said ceramic layer is comprised of at least one material selected from a group consisting of cubic BN, BN containing cubic BN, AlN, BP diamond, and diamond-like carbon.

Claim 4

The process according to claim 1 wherein in said first step, said vaporized material is deposited and said accelerated ion beam is allowed to impinge on said metal substrate simultaneously.

Claim 5

The process according to claim 1 wherein in said first step, said vaporized material is deposited and said accelerated ion beam is allowed to impinge on said metal substrate alternately.

Claim 6

The process of claim 1, wherein said ion is accelerated by an energy of no higher than 40 keV.

Claim 7

A process for producing a composite substrate for electronic devices such as integrated circuits and semiconductors comprising: a first step wherein more than one cycle of initial deposition of a vaporized material and implantation of an accelerated ion beam on a metal substrate in a vacuum environment and subsequent continued deposition of said vaporized material thereon is carried out with at least one of an evaporant and an ion species in said ion beam being changed, so as to form a plurality of electrically insulating dissimilar ceramic layers on said metal substrate, a first mixed layer being formed in an area near an interface between said metal substrate and an overlying ceramic layer, and a second mixed layer being formed in an area near an interface between any two adjacent ceramic layers, each of said mixed layers being composed of materials constituting each of the layers situated on both sides thereof; and a second step wherein, initially, a metal vapor is deposited, and an accelerated ionized inert gas is simultaneously allowed to impinge on the topmost ceramic layer formed in said first step and, thereafter, said metal vapor alone is continued to be deposited thereon, so as to form a metal layer on said topmost ceramic layer and a mixed layer in an area near an interface between said topmost ceramic layer and said metal layer, said mixed layer being composed of ceramic and metal materials of the layers situated on both sides thereof.

Claim 8

A process for producing a composite substrate for electronic devices such as integrated circuits and semiconductors comprising: a first step wherein more than one cycle of initial deposition of a vaporized material and implantation of an accelerated ion beam on a metal substrate in a vacuum environment and subsequent continued deposition of said vaporized material thereon is carried out with at least one of an evaporant and an ion species in said ion beam being changed, so as to form a plurality of electrically insulating dissimilar ceramic layers on said metal substrate, a first mixed layer being formed in an area near an interface between said metal substrate and an overlying ceramic layer, and a second mixed layer being formed in an area near an interface between any two adjacent ceramic layers, each of said mixed layers being composed of materials constituting each of the layers situated on both sides thereof; and a second step wherein, initially, a metal vapor is deposited, and an accelerated ionized inert gas is simultaneously allowed to impinge on the topmost ceramic layer formed in said first step and, thereafter, said metal vapor alone is continued to be deposited thereon, so as to form a metal layer on said topmost ceramic layer and a mixed layer in an area near an interface between said topmost ceramic layer and said metal layer, said mixed layer being composed of ceramic and metal materials of the layers situated on both sides thereof.

Claim 9

A process according to claim 6 wherein said vaporized material is comprised of at least one material selected from a group consisting of B, Al, P and C, said accelerated ion beam is comprised of at least one material selected from a group consisting of N ion, P ion, B ion, C ion and an ionized inert gas, and each of said ceramic layers is comprised of at least one material selected from a group consisting of cubic BN, BN containing cubic BN, AlN, BP diamond, and diamond-like carbon.

Claim 10

The process according to claim 6 wherein in said first step, initially, said vaporized material is deposited and said accelerated ion beam is allowed to impinge on said metal substrate simultaneously.

Claim 11

The process according to claim 6 wherein in said first step, said vaporized material is deposited and said accelerated ion beam is allowed to impinge on said metal substrate alternately.

Claim 12

The process of claim 6, wherein said ion is accelerated by an energy of no higher than 40 keV.