US4673587A
Expired / Lapsed
US
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Method of producing a composite ceramic body
Assignee: Toyota Central R&D Labs Inc
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Filing: 1986-03-27
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Granted: 1987-06-16
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Expires: 2006-03-27
Abstract
Abstract A method of producing a composite ceramic body which is comprises forming an amorphous ceramic film on the surface of a ceramic substrate; and irradiating said film with ions of high energy to cause atom mixing between said ceramic substrate and said amorphous ceramic film and to allow said film to adhere firmly and integrally to said substrate.
Inventors
- 👤 Osami Kamigaito
- 👤 Shoji Noda
- 👤 Haruo Doi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:55
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/0652; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/5025; C04B41/5053; C04B41/5062; C04B41/5066; C04B41/80; C04B41/81; C04B41/85; C04B41/87; C23C14/08; C23C14/58; C23C14/5826; C23C14/5833; C23C14/5893; C23C16/00; C23C16/56
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
141 words
A method of producing a composite ceramic body, comprising: forming an amorphous ceramic film selected from the group consisting of silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ) and mullite on the surface of a ceramic substrate selected from the group consisting of silicon nitride (Si 3 N 4 ), silicon carbide (SiC), aluminum oxide (Al 2 O 3 ) and zirconium oxide (ZrO 2 ), said film having a thickness of 0.1 to 10 microns; and irradiating said film with ions selected from the group consisting of helium, nitrogen, neon, argon and xenon, said ions having high energy ranging from 60 KeV to 3 MeV which causes atom mixing between said substrate and said film thereby resulting in firm and integral adherence of said film to said ceramic substrate.
Claim 2
Independent Claim
141 words
A method of producing a composite ceramic body, comprising: forming an amorphous ceramic film selected from the group consisting of silicon nitride (Si 3 N 4 ), aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ) and mullite on the surface of a ceramic substrate selected from the group consisting of silicon nitride (Si 3 N 4 ), silicon carbide (SiC), aluminum oxide (Al 2 O 3 ) and zirconium oxide (ZrO 2 ), said film having a thickness of 0.1 to 10 microns; and irradiating said film with ions selected from the group consisting of helium, nitrogen, neon, argon and xenon, said ions having high energy ranging from 60 KeV to 3 MeV which causes atom mixing between said substrate and said film thereby resulting in firm and integral adherence of said film to said ceramic substrate.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein said film is formed by the sputtering or chemical vapor deposition of ceramic material on said substrate.
Claim 4
Dependent Claim
24 words
The method of claim 1, wherein the dosage of said ions is in the range of 1×10 14 to 1×10 18 ions/cm 2 .
References Cited (Backward Citations)
US4249962A
Cited
US4364778A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-15 | 1990-12-15 | 1991-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-15 | 1994-12-15 | 1995-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-15 | 1998-12-15 | 1999-06-16 | $7700.00 | Window Closed / Lapsed |