US4698233A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Production of aluminum material having an aluminum nitride layer
Assignee: Nippon Light Metal Co Ltd
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Filing: 1986-06-10
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Granted: 1987-10-06
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Expires: 2006-06-10
Abstract
Abstract Process for producing an aluminum material having an aluminum nitride surface layer which comprises implanting the surface of an aluminum substrate with nitrogen ions while maintaining a nitrogen atmosphere under reduced pressure in the vicinity of the surface of the aluminum substrate. The aluminum nitride modified layer contains substantially no impurities such as oxygen. It is a feature of this invention to perform ion implantation in a properly controlled nitrogen atmosphere at a proper degree of vacuum in the range of about 10 -7 to 10 -5 Torr.
Inventors
- 👤 Shigeo Ohira
- 👤 Masaya Iwaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:48
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/48
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
57 words
A process for producing an aluminum material having an aluminum nitride layer on the surface thereof which comprises implanting the surface of an aluminum substrate with nitrogen ions while maintaining a nitrogen atmosphere under reduced pressure in the range of about 10 -7 to 10 -5 Torr in the vicinity of the surface of the aluminum substrate.
Claim 2
Dependent Claim
57 words
A process for producing an aluminum material having an aluminum nitride layer on the surface thereof which comprises implanting the surface of an aluminum substrate with nitrogen ions while maintaining a nitrogen atmosphere under reduced pressure in the range of about 10 -7 to 10 -5 Torr in the vicinity of the surface of the aluminum substrate.
Claim 3
Dependent Claim
26 words
A process for producing an aluminum material as set forth in claim 1, wherein the accelerating energy for nitrogen ion implantation is 10 to 300 keV.
Claim 4
Dependent Claim
26 words
A process for producing an aluminum material as set forth in claim 1, wherein the accelerating energy for nitrogen ion implantation is 50 to 200 keV.
Claim 5
Dependent Claim
29 words
A process for producing an aluminum material as set forth in claim 1, wherein the amount of nitrogen ions for implantation is greater than 5×10 17 ions/cm 2 .
Claim 6
Dependent Claim
22 words
A process for producing an aluminum material as set forth in claim 1, wherein the aluminum substrate is aluminum of single crystal.
Claim 7
Dependent Claim
26 words
A process for producing an aluminum material as set forth in claim 1, wherein the aluminum nitride layer has a thickness of 0.1 to 0.5 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-10-05 | 1991-04-06 | 1991-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-05 | 1995-04-06 | 1995-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-05 | 1999-04-06 | 1999-10-06 | $7700.00 | Window Closed / Lapsed |