US5236850A
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Method of manufacturing a semiconductor film and a semiconductor device by sputtering in a hydrogen atmosphere and crystallizing
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1991-09-18
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Granted: 1993-08-17
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Expires: 2011-09-18
Abstract
Abstract A method of manufacturing a semiconductor film and a semiconductor device is disclosed. The method comprises the steps of: forming a non-single crystal semiconductor film on a surface by sputtering in an atmosphere comprising hydrogen; and crystallizing the non-single crystal semiconductor film at a temperature of 450 DEG C. to 750 DEG C.
Inventors
- 👤 Hongyong Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 08:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/158; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
132 words
A method of manufacturing a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film layer on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas where a proportion of the hydrogen in the atmosphere is not lower than 20 volume %; crystallizing said non-single crystal semiconductor film layer by heating the film layer to form a semiconductive current path connecting a current source region which is adapted for connection to an external source of current and a current drain region adapted for connection to a receiver of current, so that said current path conveys current from said current source region to said current drain region; and forming said current source region and said current drain region at opposite ends of the crystallized film layer.
Claim 2
Independent Claim
132 words
A method of manufacturing a semiconductor device comprising the steps of: forming a non-single crystal semiconductor film layer on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas where a proportion of the hydrogen in the atmosphere is not lower than 20 volume %; crystallizing said non-single crystal semiconductor film layer by heating the film layer to form a semiconductive current path connecting a current source region which is adapted for connection to an external source of current and a current drain region adapted for connection to a receiver of current, so that said current path conveys current from said current source region to said current drain region; and forming said current source region and said current drain region at opposite ends of the crystallized film layer.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein said non-single crystal semiconductor film comprises a material selected from the group consisting of an amorphous semiconductor, a semi-amorphous semiconductor, a microcrystal semiconductor, and an imperfect polycrystal semiconductor.
Claim 4
Dependent Claim
28 words
The method of claim 1 wherein the step of crystallizing said non-single crystal semiconductor film layer is carried out at a temperature of 450° C. to 750° C.
Claim 5
Dependent Claim
21 words
The method of claim 1 wherein said inert gas comprises a gas selected from the group consisting of argon and helium.
Claim 6
Dependent Claim
11 words
The method of claim 1 wherein said semiconductor film comprises silicon.
Claim 7
Independent Claim
125 words
A method of manufacturing an insulated gate field effect transistor comprising the steps of: forming a non-single crystal semiconductor film on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas where a proportion of the hydrogen in the atmosphere is not lower than 20 volume %; crystallizing said non-single crystal semiconductor film by heating said film; forming a gate electrode adjacent to said non-single crystal semiconductor film with a gate insulator therebetween so that a channel region is defined by said gate electrode where said gate electrode may be formed either before the formation of said non-single crystal semiconductor film or after crystallizing said non-single crystal semiconductor film; and forming source and drain semiconductor regions adjacent to said channel region.
Claim 8
Independent Claim
125 words
A method of manufacturing an insulated gate field effect transistor comprising the steps of: forming a non-single crystal semiconductor film on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas where a proportion of the hydrogen in the atmosphere is not lower than 20 volume %; crystallizing said non-single crystal semiconductor film by heating said film; forming a gate electrode adjacent to said non-single crystal semiconductor film with a gate insulator therebetween so that a channel region is defined by said gate electrode where said gate electrode may be formed either before the formation of said non-single crystal semiconductor film or after crystallizing said non-single crystal semiconductor film; and forming source and drain semiconductor regions adjacent to said channel region.
Claim 9
Dependent Claim
34 words
The method of claim 6 wherein said source and drain regions are formed by forming a doped semiconductor pattern coated on said semiconductor film in advance of the step of forming the insulating film.
Claim 10
Dependent Claim
28 words
The method of claim 6 wherein the step of crystallizing said non-single crystal semiconductor film layer is carried out at a temperature of 450° C. to 750° C.
Claim 11
Dependent Claim
21 words
The method of claim 6 wherein said inert gas comprises a gas selected from the group consisting of argon and helium.
Claim 12
Dependent Claim
11 words
The method of claim 6 wherein said semiconductor film comprises silicon.
Claim 13
Dependent Claim
21 words
The method of claim 6 wherein said atmosphere further comprises a gas selected from the group consisting of monosilane and disilane.
Claim 14
Dependent Claim
34 words
The method of claim 6 wherein said non-single crystal semiconductor film comprises a material selected from the group consisting of an amorphous semiconductor, a semi-amorphous semiconductor, a microcrystal semiconductor, and an imperfect polycrystal semiconductor.
Claim 15
Dependent Claim
23 words
The method of claim 6 wherein said source and drain regions are formed by ion implantation with said gate electrode as a mask.
Claim 16
Dependent Claim
28 words
The method of claim 6 wherein said source and drain regions are formed by ion implantation with a mask used for forming said gate electrode as a mask.
Claim 17
Independent Claim
53 words
A method of manufacturing an insulated-gate field effect transistor comprising the steps of: forming a non-single crystal semiconductor film on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas; crystallizing said non-single crystal semiconductor film; and annealing said crystallized non-single crystal semiconductor film in a hydrogen containing atmosphere.
Claim 18
Independent Claim
53 words
A method of manufacturing an insulated-gate field effect transistor comprising the steps of: forming a non-single crystal semiconductor film on an insulating substrate by sputtering in an atmosphere comprising hydrogen and an inert gas; crystallizing said non-single crystal semiconductor film; and annealing said crystallized non-single crystal semiconductor film in a hydrogen containing atmosphere.
Claim 19
Dependent Claim
30 words
The method of claim 15 wherein said source and drain regions are formed by forming a doped semiconductor patterned film coated on said semiconductor film except on said channel region.
Claim 20
Dependent Claim
19 words
The method of claim 15 wherein a proportion of the hydrogen in said atmosphere is not lower than 20%.
Claim 21
Dependent Claim
21 words
The method of claim 16 wherein said inert gas comprises a gas selected from the group consisting of argon and helium.
Claim 22
Dependent Claim
34 words
The method of claim 15 wherein said non-single crystal semiconductor film comprises a material selected from the group consisting of an amorphous semiconductor, a semi-amorphous semiconductor, a microcrystal semiconductor, and an imperfect polycrystal semiconductor.
Claim 23
Dependent Claim
11 words
The method of claim 15 wherein said semiconductor film comprises silicon.
Claim 24
Dependent Claim
40 words
The method of claim 15 wherein said method further comprises the steps of forming a gate electrode, a gate insulator, source and drain regions, before the step of annealing said crystallized non-single crystal semiconductor film in the hydrogen containing atmosphere.
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