US5049523A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming semiconducting materials and barriers
Assignee: Plasma Physics Corp
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Filing: 1989-08-16
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Granted: 1991-09-17
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Expires: 2009-08-16
Abstract
Abstract In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.
Inventors
- 👤 John H. Coleman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:58
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/164; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/503; C23C16/505; C23C16/509; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32532; H01J37/32541; H01J37/32623; H10F10/17; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
138 words
The method of producing hydrogenated amorphous silicon on the surface of a substrate electrically connected to an electrode in an evacuated enclosure in which a thermal source is positioned outside of said electrode, opposite to and at a distance from said surface of said substrate which includes the steps of introducing a combination of gases comprising species comprising silicon and hydrogen at subatmospheric pressure in the region of said surface, controlling the temperature of said thermal source above 500° C. to generate at least said silicon portion of said species comprising silicon and hydrogen, applying to said surface of said substrate an electric field and controlling said pressure and said electric field to maintain said glow discharge in said species comprising silicon and hydrogen adjacent to said substrate surface to produce hydrogenated amorphous silicon film on said surface.
Claim 2
Independent Claim
138 words
The method of producing hydrogenated amorphous silicon on the surface of a substrate electrically connected to an electrode in an evacuated enclosure in which a thermal source is positioned outside of said electrode, opposite to and at a distance from said surface of said substrate which includes the steps of introducing a combination of gases comprising species comprising silicon and hydrogen at subatmospheric pressure in the region of said surface, controlling the temperature of said thermal source above 500° C. to generate at least said silicon portion of said species comprising silicon and hydrogen, applying to said surface of said substrate an electric field and controlling said pressure and said electric field to maintain said glow discharge in said species comprising silicon and hydrogen adjacent to said substrate surface to produce hydrogenated amorphous silicon film on said surface.
Claim 3
Dependent Claim
34 words
The method of claim 1 further comprising the step of controlling the temperature of said substrate surface below the temperature of said thermal source to enhance the semiconducting properties of said hydrogenated amorphous silicon.
Claim 4
Dependent Claim
18 words
The method of claim 2 wherein said silicon portion is thermally evaporated from a solid source comprising silicon.
Claim 5
Dependent Claim
19 words
The method of claim 2 wherein said silicon portion is generated from a gaseous source comprising silicon and hydrogen.
Claim 6
Independent Claim
131 words
The method of producing hydrogenated amorphous silicon on the surface of a substrate in an evacuated enclosure in which a thermionic source of electrons at a temperature capable of operating above 500° C. is positioned outside said electrode opposite to and at a distance from said substrate surface which includes the steps of introducing a combination of gases comprising species comprising silicon and hydrogen at subatmospheric pressure in the region of said surface, applying to said surface an electric field and controlling said pressure and said electric field to maintain said glow discharge in said electric field adjacent said substrate surface to produce hydrogenated amorphous silicon film on said surface wherein said glow is stabilized by electrons from said thermionic source when operating said source at a temperature above 500° C.
Claim 7
Independent Claim
131 words
The method of producing hydrogenated amorphous silicon on the surface of a substrate in an evacuated enclosure in which a thermionic source of electrons at a temperature capable of operating above 500° C. is positioned outside said electrode opposite to and at a distance from said substrate surface which includes the steps of introducing a combination of gases comprising species comprising silicon and hydrogen at subatmospheric pressure in the region of said surface, applying to said surface an electric field and controlling said pressure and said electric field to maintain said glow discharge in said electric field adjacent said substrate surface to produce hydrogenated amorphous silicon film on said surface wherein said glow is stabilized by electrons from said thermionic source when operating said source at a temperature above 500° C.
Claim 8
Dependent Claim
27 words
The method of claim 5 further comprising the step of controlling the temperature of said substrate surface to enhance the semiconducting properties of said hydrogenated amorphous silicon.
Claim 9
Dependent Claim
31 words
The method of claim 5 wherein a portion of said species comprising silicon and hydrogen is generated by exposing gas comprising silicon and hydrogen to said electrons from said thermionic source.
References Cited (Backward Citations)
US4064521A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-09-16 | 1995-03-18 | 1995-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-16 | 1999-03-18 | 1999-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-16 | 2003-03-18 | 2003-09-17 | $7700.00 | Window Closed / Lapsed |