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US5229646A
Expired / Lapsed
US
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Semiconductor device with a copper wires ball bonded to aluminum electrodes
Assignee: Mitsubishi Electric Corp
•
Filing: 1992-03-17
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Granted: 1993-07-20
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Expires: 2012-03-17
Abstract
Abstract A semiconductor device formed by a semiconductor chip bonded to a lead frame die pad. The bonding material, such as a silicone resin, has an elasticity modulus ranging from 1 Kg/cm2 to 100 Kg/cm2 from room temperature to 400 DEG C. The lead frame electrodes are connected to the semiconductor chip electrodes by copper alloy wires.
Inventors
- 👤 Kiyoaki Tsumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:14
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/30; H10W72/073; H10W72/07331; H10W72/07336; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/07541; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/5525; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/731; H10W90/736
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
102 words
A semiconductor device comprising: a lead frame having a die pad; a semiconductor chip having opposed first and second surfaces and including aluminum electrodes on the first surface, said semiconductor chip being bonded at the second surface to said die pad with a bonding material having an elasticity modulus in the range of from 1 Kg/cm 2 to 10 2 Kg/cm 2 within a temperature range of from room temperature to about 400° C.; copper alloy wires ultrasonically and thermally ball bonded to respective electrodes on said semiconductor chip; and a resin encapsulating said die pad, said semiconductor device, and said wires.
Claim 2
Dependent Claim
102 words
A semiconductor device comprising: a lead frame having a die pad; a semiconductor chip having opposed first and second surfaces and including aluminum electrodes on the first surface, said semiconductor chip being bonded at the second surface to said die pad with a bonding material having an elasticity modulus in the range of from 1 Kg/cm 2 to 10 2 Kg/cm 2 within a temperature range of from room temperature to about 400° C.; copper alloy wires ultrasonically and thermally ball bonded to respective electrodes on said semiconductor chip; and a resin encapsulating said die pad, said semiconductor device, and said wires.
Claim 3
Dependent Claim
14 words
The semiconductor device of claim 1 wherein said bonding material is a silicone resin.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-19 | 1997-01-18 | 1997-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-19 | 2001-01-18 | 2001-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-19 | 2005-01-18 | 2005-07-20 | $7700.00 | Window Closed / Lapsed |