US5116783A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1989-08-11
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Granted: 1992-05-26
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Expires: 2009-08-11
Abstract
Abstract A method of producing a semiconductor device includes bonding a semiconductor chip to a die pad of a lead frame by means of a silicone resin, to bonding a copper wire and an aluminum electrode of the semiconductor chip in such a manner that intermetallic compound mainly consisting of CuAl2 is formed in the bonding region. This method suppresses the deterioration of the copper-aluminum alloy layer and these semiconductor devices have a high reliability at a high temperature, as well as uniform quality in the production.
Inventors
- 👤 Kiyoaki Tsumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:12
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/07551; H10W72/07553; H10W72/30; H10W72/351; H10W72/352; H10W72/353; H10W72/354; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5525; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/921; H10W72/923; H10W72/931; H10W72/934; H10W72/951; H10W72/952; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; Y; Y10; Y10S; Y10S228/00; Y10S228/904; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
140 words
A method of producing a semiconductor device comprising: bonding a semiconductor chip having an aluminum electrode to a die pad of a lead frame with a bonding material disposed between the lead frame and die pad and having an elasticity modulus ranging between 1 kg/cm 2 and 100 kg/cm 2 from room temperature to about 400° C.; melting an end of a copper wire to form a copper ball; heating the aluminum electrode and pressing the copper ball on the heated aluminum electrode while applying ultrasonic energy to the heated aluminum electrode to deform the copper ball plastically and to form a θ phase intermetallic compound (CuAl 2 ) of copper and aluminum in the region where the deformed copper ball contacts the electrode; and encapsulating the bond between the aluminum electrode and the copper wire with an epoxy resin.
Claim 2
Independent Claim
140 words
A method of producing a semiconductor device comprising: bonding a semiconductor chip having an aluminum electrode to a die pad of a lead frame with a bonding material disposed between the lead frame and die pad and having an elasticity modulus ranging between 1 kg/cm 2 and 100 kg/cm 2 from room temperature to about 400° C.; melting an end of a copper wire to form a copper ball; heating the aluminum electrode and pressing the copper ball on the heated aluminum electrode while applying ultrasonic energy to the heated aluminum electrode to deform the copper ball plastically and to form a θ phase intermetallic compound (CuAl 2 ) of copper and aluminum in the region where the deformed copper ball contacts the electrode; and encapsulating the bond between the aluminum electrode and the copper wire with an epoxy resin.
Claim 3
Dependent Claim
18 words
A method according to claim 1 including bonding the chip with a silicone resin as the bonding material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-26 | 1995-11-25 | 1996-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-26 | 1999-11-25 | 2000-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-26 | 2003-11-25 | 2004-05-26 | $7700.00 | Window Closed / Lapsed |