US4891333A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and manufacturing method thereof
Assignee: Toshiba Corp
•
Filing: 1988-02-01
•
Granted: 1990-01-02
•
Expires: 2008-02-01
Abstract
Abstract This invention concerns a semiconductor device manufacturing method wherein connection is made of the end portion of aluminium bonding wire to a lead electrode of material selected from the group consisting of copper and copper alloy in a manner such that the reaction layer thickness is 0.2 micron or more, thereby resulting in excellent electrical characteristics in high temperature conditions or in high temperature, high humidity conditions.
Inventors
- 👤 Hiroyuki Baba
- 👤 Takashi Matsuzaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:01
CPC Classifications
B; B23; B23K; B23K20/00; B23K20/22; B23K20/233; B23K20/2333; H; H10; H10W; H10W70/00; H10W70/01; H10W70/04; H10W70/041; H10W70/40; H10W72/00; H10W72/50; H10W72/01; H10W72/015; H10W72/01551; H10W72/071; H10W72/0711; H10W72/07141; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/07535; H10W72/07541; H10W72/531; H10W72/5363; H10W72/551; H10W72/552; H10W72/5524; H10W72/5525; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/90; H10W72/951; H10W72/952; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756; Y; Y10; Y10S; Y10S228/00; Y10S228/904; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
158 words
Semiconductor device manufacturing method comprising the steps of: connecting one end of a bonding wire made of aluminum to a bonding pad of a semiconductor element mounted on a lead frame made of a material selected from the group consisting of copper and copper alloy; bonding the other end of said bonding wire to a lead electrode of said lead frame, said lead electrode made of a material selected from the group consisting of copper and copper alloy; heating said bonding portion of said other end of said wire connected to said lead electrode at a temperature below the melting point of said bonding wire for a predetermined time period until a reaction layer with a thickness of 0.2 micron or more is formed by said copper or copper alloy and aluminum; and molding said semiconductor element, said bonding pad, and said bonding wire including the bonding portion of said other end thereof with a resinous material entirely.
Claim 2
Dependent Claim
158 words
Semiconductor device manufacturing method comprising the steps of: connecting one end of a bonding wire made of aluminum to a bonding pad of a semiconductor element mounted on a lead frame made of a material selected from the group consisting of copper and copper alloy; bonding the other end of said bonding wire to a lead electrode of said lead frame, said lead electrode made of a material selected from the group consisting of copper and copper alloy; heating said bonding portion of said other end of said wire connected to said lead electrode at a temperature below the melting point of said bonding wire for a predetermined time period until a reaction layer with a thickness of 0.2 micron or more is formed by said copper or copper alloy and aluminum; and molding said semiconductor element, said bonding pad, and said bonding wire including the bonding portion of said other end thereof with a resinous material entirely.
Claim 3
Dependent Claim
21 words
Method according to claim 1, wherein said heating step consists of heating effected with said lead electrode held between heater elements.
Claim 4
Dependent Claim
14 words
Method according to claim 2, wherein holding by said heater elements is effected intermittently.
Claim 5
Dependent Claim
22 words
Method according to claim 2, wherein non-oxidizing gas is blown onto said lead frame from below during heating by said heater elements.
Claim 6
Dependent Claim
13 words
Method according to claim 4, wherein said non-oxidizing gas comprises a reducing gas.
Claim 7
Dependent Claim
11 words
Method according to claim 5, wherein said reducing gas is hydrogen.
Claim 8
Dependent Claim
13 words
Method according to claim 4, wherein said non-oxidizing gas comprises an inert gas.
Claim 9
Dependent Claim
22 words
Method according to claim 7, wherein said inert gas is a gas selected from the group consisting of nitrogen, argon and helium.
Claim 10
Dependent Claim
18 words
Method according to claim 1, wherein said heating step consists of heating by passage through a hydrogen oven.
Claim 11
Dependent Claim
25 words
Method according to claim 1, wherein said heating step is effected by heating said lead electrode apart from said bonding portion with a burner torch.
Claim 12
Dependent Claim
20 words
Method according to claim 1, wherein said heating step consists of heating said lead electrode by a resistance heating system.
Claim 13
Dependent Claim
18 words
Method according to claim 1, wherein said heating step consists of heating said bonding portion by laser irradiation.
Claim 14
Dependent Claim
15 words
Method according to claim 2, wherein said holding by said heater elements is effected continuously.
References Cited (Backward Citations)
US3729820A
Cited
US3706840A
Cited
US3914858A
Cited
US4188438A
Cited
US4248920A
Cited
US4218701A
Cited
US4264917A
Cited
US4224499A
Cited
US4380775A
Cited
JPS56137664A
Cited
US4530002A
Cited
US4434347A
Cited
US4422233A
Cited
US4384899A
Cited
JPS5889831A
Cited
US4633573A
Cited
US4649637A
Cited
US4604642A
Cited
JPH0622328A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-01 | 1993-07-03 | 1994-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-01 | 1997-07-03 | 1998-01-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-01 | 2001-07-03 | 2002-01-02 | $7700.00 | Window Closed / Lapsed |