US4604642A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fe-Ni-Cu leadframe
Assignee: Toshiba Corp
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Filing: 1984-03-26
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Granted: 1986-08-05
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Expires: 2004-03-26
Abstract
Abstract What is disclosed is a semiconductor apparatus comprises a semiconductor element, a pair of in-line electrode leads having a mounting island supporting the semiconductor element and a molded housing of resin compound. The electrode leads and mounting island are made of an alloy having a thermal expansion coefficient in the range of about 7×10 -6 1/C° to about 14×10 -6 1/C°. Thus, when the device is subjected to temperature variations, there is little warpage or cracking in the device.
Inventors
- 👤 Toshiharu Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:19
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W; H10W70/00; H10W70/40; H10W70/456; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5525; H10W72/851; H10W72/874; H10W72/884; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/756
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
94 words
In a semiconductor device comprising a semiconductor element: a pair of in-line lead electrodes having a mounting island supporting the semiconductor element; a molding resin body substantially enclosing said semiconductor element and said electrodes, wherein said electrodes and island are made from an alloy essentially consisting of 3 wt percent to 8 wt percent of copper (Cu), 25 wt percent to 30 wt percent of nickel (Ni) and the remaining amount of iron (Fe), said electrodes having a thermal expansion coefficient in the range of about 7×10 -6 1/°C. to about 14×10 -6 1/°C.
Claim 2
Dependent Claim
94 words
In a semiconductor device comprising a semiconductor element: a pair of in-line lead electrodes having a mounting island supporting the semiconductor element; a molding resin body substantially enclosing said semiconductor element and said electrodes, wherein said electrodes and island are made from an alloy essentially consisting of 3 wt percent to 8 wt percent of copper (Cu), 25 wt percent to 30 wt percent of nickel (Ni) and the remaining amount of iron (Fe), said electrodes having a thermal expansion coefficient in the range of about 7×10 -6 1/°C. to about 14×10 -6 1/°C.
Claim 3
Dependent Claim
20 words
A semiconductor device according to claim 1 wherein the size of said semiconductor element is larger than 6 mm×6 mm.
Claim 4
Dependent Claim
39 words
A semiconductor device according to claim 1 wherein said electrodes has a thermal expansion coefficient which is greater than the thermal expansion coefficient of said semiconductor element but is smaller than the thermal expansion coefficient of said molding resin.
Claim 5
Dependent Claim
125 words
In a semiconductor device comprising a semiconductor element having a first thermal expansion coefficient: a material forming said semiconductor element; a pair of in-line lead electrodes having a mounting island supporting said semiconductor element and having a second thermal expansion coefficient, where said lead electrodes essentially consists of 3 wt percent to 8 wt percent of copper (Cu), 25 wt percent to 30 wt percent of nickel (Ni), and the remaining amount of iron (Fe); a molding resin body substantially enclosing said semiconductor element and said lead electrodes and having a third thermal expansion coefficient; and wherein said second thermal expansion coefficient is within 11×10 -6 1/°C. of said first thermal expansion coefficient and is within 13×10 -6 1/°C. of said third thermal expansion coefficient.
Claim 6
Dependent Claim
125 words
In a semiconductor device comprising a semiconductor element having a first thermal expansion coefficient: a material forming said semiconductor element; a pair of in-line lead electrodes having a mounting island supporting said semiconductor element and having a second thermal expansion coefficient, where said lead electrodes essentially consists of 3 wt percent to 8 wt percent of copper (Cu), 25 wt percent to 30 wt percent of nickel (Ni), and the remaining amount of iron (Fe); a molding resin body substantially enclosing said semiconductor element and said lead electrodes and having a third thermal expansion coefficient; and wherein said second thermal expansion coefficient is within 11×10 -6 1/°C. of said first thermal expansion coefficient and is within 13×10 -6 1/°C. of said third thermal expansion coefficient.
References Cited (Backward Citations)
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