Method of manufacturing a semiconductor device

Claim 1

A method of manufacturing a semiconductor device, comprising the steps of: forming a pair of gate electrodes, with respective upper and lower insulating films arranged above and below and in contact with each gate electrode, on the surface of a semiconductor substrate of a first conductivity type; forming in said substrate pairs of first impurity regions of a second conductivity type mutually separated and self-aligned with each gate electrode; oxidizing each of said gate electrodes to form a thin oxide on a side peripheral portion thereof; depositing a first insulating layer over the entire surface including an upper surface of said upper insulating film, a thickness of said first insulating layer being less than a thickness of said upper insulating film; forming walls on the side face of said each gate electrode and its respective upper and lower insulating films by anisotropic etching of said first insulating layer so as to expose the surface of said semiconductor substrate and simultaneously forming direct contact holes exposing said substrate; depositing a layer over the entire surface so as to directly contact said walls; diffusing impurities of second conductivity type into the layer, and the substrate through the layer to form pairs of highly doped impurity regions of second conductivity type in a self-aligned manner with respect to each said wall; forming electrode layers connected to said highly doped regions by patterning the layers; forming a second insulation layer over the entire surface of said semiconductor substrate; opening predetermined contact holes in said second insulation layer; and selectively forming a wiring layer connected to said electrode layers through said contact hole.

Claim 2

A method of manufacturing a semiconductor device, comprising the steps of: forming a pair of gate electrodes, with respective upper and lower insulating films arranged above and below and in contact with each gate electrode, on the surface of a semiconductor substrate of a first conductivity type; forming in said substrate pairs of first impurity regions of a second conductivity type mutually separated and self-aligned with each gate electrode; oxidizing each of said gate electrodes to form a thin oxide on a side peripheral portion thereof; depositing a first insulating layer over the entire surface including an upper surface of said upper insulating film, a thickness of said first insulating layer being less than a thickness of said upper insulating film; forming walls on the side face of said each gate electrode and its respective upper and lower insulating films by anisotropic etching of said first insulating layer so as to expose the surface of said semiconductor substrate and simultaneously forming direct contact holes exposing said substrate; depositing a layer over the entire surface so as to directly contact said walls; diffusing impurities of second conductivity type into the layer, and the substrate through the layer to form pairs of highly doped impurity regions of second conductivity type in a self-aligned manner with respect to each said wall; forming electrode layers connected to said highly doped regions by patterning the layers; forming a second insulation layer over the entire surface of said semiconductor substrate; opening predetermined contact holes in said second insulation layer; and selectively forming a wiring layer connected to said electrode layers through said contact hole.

Claim 4

A method of manufacturing a semiconductor device, comprising the steps of: forming a pair of gate electrodes, with respective upper and lower insulating films arranged above and below and in contact with the gate electrodes, on the surface of a semiconductor substrate of a first conductivity type; forming pairs of diffusion regions of second conductivity type by doping said substrate with impurity of a second conductivity type using each said gate electrode and its respective upper and lower insulating films as a mask; oxidizing each of said gate electrodes to form a thin oxide on a side peripheral portion thereof; depositing a first insulating layer over the entire surface including an upper surface of said upper insulating film, a thickness of said first insulating layer being less than a thickness of said upper insulating film; forming walls on the side face of said gate electrode and its respective upper and lower insulating films by anisotropic etching of said first insulating layer so as to expose the surface of said semiconductor substrate and simultaneously forming direct contact holes exposing said substrate; depositing a conductive layer over the entire surface so as to directly contact said walls and then forming electrode layers connected to said diffusion regions through said direct contact holes by patterning said conductive layer; forming a second insulation layer over the entire surface of said semiconductor substrate; opening predetermined contact holes in said insulation layer; and selectively forming a wiring layer connected to said electrode layer through said contact hole.

Claim 5

A method of manufacturing a semiconductor device, comprising the steps of: forming a pair of gate electrodes, with respective upper and lower insulating films arranged above and below and in contact with the gate electrodes, on the surface of a semiconductor substrate of a first conductivity type; forming pairs of diffusion regions of second conductivity type by doping said substrate with impurity of a second conductivity type using each said gate electrode and its respective upper and lower insulating films as a mask; oxidizing each of said gate electrodes to form a thin oxide on a side peripheral portion thereof; depositing a first insulating layer over the entire surface including an upper surface of said upper insulating film, a thickness of said first insulating layer being less than a thickness of said upper insulating film; forming walls on the side face of said gate electrode and its respective upper and lower insulating films by anisotropic etching of said first insulating layer so as to expose the surface of said semiconductor substrate and simultaneously forming direct contact holes exposing said substrate; depositing a conductive layer over the entire surface so as to directly contact said walls and then forming electrode layers connected to said diffusion regions through said direct contact holes by patterning said conductive layer; forming a second insulation layer over the entire surface of said semiconductor substrate; opening predetermined contact holes in said insulation layer; and selectively forming a wiring layer connected to said electrode layer through said contact hole.

Claim 8

A method of manufacturing of semiconductor device, comprising the steps of: forming a gate electrode having upper and lower insulating films arranged above and below and in contact with said gate electrode, on the surface of a semiconductor substrate of a first conductivity type; forming in said substrate a pair of first impurity regions of a second conductivity type mutually separated and self-aligned with said gate electrode; oxidizing said gate electrode to form a thin oxide on a side peripheral portion thereof; depositing a first insulating layer over the entire surface including an upper surface of said upper insulating film, a thickness of said first insulating layer being less than a thickness of said upper insulating film; forming walls on the side face of said gate electrode and its respective upper and lower insulating films by anisotropic etching of said first insulating layer so as to expose the surface of said semiconductor substrate and simultaneously forming direct contact holes exposing said substrate; depositing a layer over the entire surface of said semiconductor substrate so as to directly contact said walls; diffusing impurities of second conductivity type into the layer, and the substrate through the layer to form a pair of highly doped impurity regions of second conductivity type in a self-aligned manner with respective walls; forming electrode layers connected to said highly doped regions by patterning the layer; forming a second insulation layer over the entire surface of said semiconductor substrate; opening at least one contact hole in said second insulation layer; and selectively forming a wiring layer connected to one of said electrode layers through said contact hole.

Claim 9

A method of manufacturing of semiconductor device, comprising the steps of: forming a gate electrode having upper and lower insulating films arranged above and below and in contact with said gate electrode, on the surface of a semiconductor substrate of a first conductivity type; forming in said substrate a pair of first impurity regions of a second conductivity type mutually separated and self-aligned with said gate electrode; oxidizing said gate electrode to form a thin oxide on a side peripheral portion thereof; depositing a first insulating layer over the entire surface including an upper surface of said upper insulating film, a thickness of said first insulating layer being less than a thickness of said upper insulating film; forming walls on the side face of said gate electrode and its respective upper and lower insulating films by anisotropic etching of said first insulating layer so as to expose the surface of said semiconductor substrate and simultaneously forming direct contact holes exposing said substrate; depositing a layer over the entire surface of said semiconductor substrate so as to directly contact said walls; diffusing impurities of second conductivity type into the layer, and the substrate through the layer to form a pair of highly doped impurity regions of second conductivity type in a self-aligned manner with respective walls; forming electrode layers connected to said highly doped regions by patterning the layer; forming a second insulation layer over the entire surface of said semiconductor substrate; opening at least one contact hole in said second insulation layer; and selectively forming a wiring layer connected to one of said electrode layers through said contact hole.

Claim 10

A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode having upper and lower insulating films arranged above and below and in contact with said gate electrode, on the surface of a semiconductor substrate of a first conductivity tape; forming a pair of diffusion regions of second conductivity tape using said gate electrode and its upper and lower insulating films as a mask; oxidizing said gate electrode to form a thin oxide on a side peripheral portion thereof; depositing a first insulating layer over the entire surface including an upper surface of said upper insulating film, a thickness of said first insulating layer being less than a thickness of said upper insulating film; forming walls on the both side faces of said gate electrode and its upper and lower insulating films by anisotropic etching of said first insulating layer so as to expose the surface of the semiconductor substrate and simultaneously forming direct contact holes exposing the surface of said substrate; depositing a conductive layer over the entire surface of said semiconductor substrate so as to directly contact said walls and then forming electrode layers connected to said diffusion regions through said direct contact holes by patterning said conductive layer; forming a second insulation layer over the entire surface of said semiconductor substrate; opening at least one contact hole in said insulation layer; and selectively forming a wiring layer connected to one of said electrode layers through said contact hole.

Claim 11

A method of manufacturing a semiconductor device, comprising the steps of: forming a gate electrode having upper and lower insulating films arranged above and below and in contact with said gate electrode, on the surface of a semiconductor substrate of a first conductivity tape; forming a pair of diffusion regions of second conductivity tape using said gate electrode and its upper and lower insulating films as a mask; oxidizing said gate electrode to form a thin oxide on a side peripheral portion thereof; depositing a first insulating layer over the entire surface including an upper surface of said upper insulating film, a thickness of said first insulating layer being less than a thickness of said upper insulating film; forming walls on the both side faces of said gate electrode and its upper and lower insulating films by anisotropic etching of said first insulating layer so as to expose the surface of the semiconductor substrate and simultaneously forming direct contact holes exposing the surface of said substrate; depositing a conductive layer over the entire surface of said semiconductor substrate so as to directly contact said walls and then forming electrode layers connected to said diffusion regions through said direct contact holes by patterning said conductive layer; forming a second insulation layer over the entire surface of said semiconductor substrate; opening at least one contact hole in said insulation layer; and selectively forming a wiring layer connected to one of said electrode layers through said contact hole.