US4521448A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1983-03-03
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Granted: 1985-06-04
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Expires: 2003-03-03
Abstract
Abstract A method of manufacturing a semiconductor device comprises the steps of: forming a thin film on a semiconductor body on which a protruding pattern is formed with the film covering both the sides and the top of the protruding pattern; performing a selective anisotropic etching on the thin film for a distance corresponding to the thin film thickness, thereby removing a portion of the thin film including that portion covering the top of the protruding pattern and leaving a portion of the thin film covering the sides of the protruding pattern, thus forming a thin film pattern surrounding at least a portion of the protruding pattern; etching at least a top part of the protruding pattern while leaving the thin film pattern to extend upwardly from the surface of the semiconductor body; forming a conductive material film covering the semiconductor body including the thin film pattern; and dividing the conductive material film into portions by removing the thin film pattern.
Inventors
- 👤 Yoshitaka Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:31
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/015; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D62/00; H10D62/80; H10D62/83; H10D64/021; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10D64/60; H10D64/62; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4088; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10D64/017
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
159 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a thin film on a semiconductor body on which a protruding pattern is formed, with said thin film covering both the sides and the top of said protruding pattern; performing a selective anisotropic etching on said thin film for a distance corresponding to said thin film thickness, thereby removing a portion of said thin film including that portion covering the top of said protruding pattern and leaving a portion of said thin film covering said sides of said protruding pattern, thus forming a thin film pattern surrounding at least a portion of the protruding pattern; etching at least a top part of the protruding pattern while leaving said thin film pattern to extend upwardly from the surface of said semiconductor body; forming a conductive film covering the semiconductor body including said thin film pattern; and dividing said conductive film into portions by removing said thin film pattern.
Claim 2
Independent Claim
159 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a thin film on a semiconductor body on which a protruding pattern is formed, with said thin film covering both the sides and the top of said protruding pattern; performing a selective anisotropic etching on said thin film for a distance corresponding to said thin film thickness, thereby removing a portion of said thin film including that portion covering the top of said protruding pattern and leaving a portion of said thin film covering said sides of said protruding pattern, thus forming a thin film pattern surrounding at least a portion of the protruding pattern; etching at least a top part of the protruding pattern while leaving said thin film pattern to extend upwardly from the surface of said semiconductor body; forming a conductive film covering the semiconductor body including said thin film pattern; and dividing said conductive film into portions by removing said thin film pattern.
Claim 3
Dependent Claim
25 words
A method according to claim 1, wherein the protruding pattern comprises a two-layer structure consisting of a semiconductor pattern and an insulation pattern laminated thereover.
Claim 4
Dependent Claim
25 words
A method according to claim 1, wherein the protruding pattern comprises a two-layer structure consisting of a conductor pattern and an insulation pattern laminated thereover.
Claim 5
Dependent Claim
16 words
A method according to claim 3, wherein the conductor pattern consists of an impurity-doped polycrystalline silicon.
Claim 6
Dependent Claim
16 words
A method according to claim 3, wherein the conductor pattern consists of an impurity-doped amorphous silicon.
Claim 7
Dependent Claim
15 words
A method according to claim 3, wherein the conductor pattern consists of a refractory metal.
Claim 8
Dependent Claim
15 words
A method according to claim 3, wherein the conductor pattern consists of a metal silicide.
Claim 9
Dependent Claim
13 words
A method according to claim 3, wherein the conductor pattern consists of aluminum.
Claim 10
Dependent Claim
15 words
A method according to claim 3, wherein the conductor pattern consists of an aluminum alloy.
Claim 11
Dependent Claim
37 words
A method according to claim 3, wherein the conductor pattern comprises an impurity-doped polycrystalline silicon film which is formed using a polycrystalline silicon film as a starting material, and doping the polycrystalline silicon film with an impurity.
Claim 12
Dependent Claim
37 words
A method according to claim 3, wherein the conductor pattern comprises a metal silicide film which is formed using a polycrystalline silicon film as a starting material, and converting the polycrystalline silicon film into a metal silicide.
Claim 13
Dependent Claim
37 words
A method according to claim 3, wherein the conductor pattern comprises an impurity-doped amorphous silicon film which is formed using an amorphous silicon film as a starting material, and doping the amorphous silicon film with an impurity.
Claim 14
Dependent Claim
38 words
A method according to claim 3, wherein the conductor pattern comprises a metal silicide film which is formed by using an amorphous silicon film as a starting material and converting the amorphous silicon film into a metal silicide.
Claim 15
Dependent Claim
21 words
A method according to claim 2, wherein the insulation film is formed using an epitaxial PSG film as a starting material.
Claim 16
Dependent Claim
22 words
A method according to claim 2, wherein the insulation pattern is formed using an epitaxial silicon nitride film as a starting material.
Claim 17
Dependent Claim
26 words
A method according to claim 1, wherein the protruding pattern comprises a two-layer structure consisting of a silicon nitride pattern and a PSG pattern laminated thereover.
Claim 18
Dependent Claim
16 words
A method according to claim 1, wherein the protruding pattern comprises only an SiO 2 pattern.
Claim 19
Dependent Claim
17 words
A method according to claim 1, wherein the protruding pattern is formed directly on the semiconductor body.
Claim 20
Dependent Claim
20 words
A method according to claim 1, wherein the protruding pattern is formed on the semiconductor body through an insulation pattern.
Claim 21
Dependent Claim
27 words
A method according to claim 1, wherein the thin film is formed through an insulation film on said semiconductor body on which the protruding pattern is formed.
Claim 22
Dependent Claim
14 words
A method according to claim 1, wherein the thin film consists of polycrystalline silicon.
Claim 23
Dependent Claim
14 words
A method according to claim 1, wherein the thin film consists of amorphous silicon.
Claim 24
Dependent Claim
14 words
A method according to claim 1, wherein the thin film consists of silicon nitride.
Claim 25
Dependent Claim
15 words
A method according to claim 1, wherein the thin film consists of a polyimide resin.
Claim 26
Dependent Claim
14 words
A method according to claim 1, wherein said conductive film forms an electrode material.
Claim 27
Dependent Claim
14 words
A method according to claim 1, wherein said conductive film forms a wiring material.
References Cited (Backward Citations)
US4359816A
Cited
US4354896A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1988-06-03 | 1988-12-03 | 1989-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-03 | 1992-12-03 | 1993-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-03 | 1996-12-03 | 1997-06-04 | $7700.00 | Window Closed / Lapsed |