US5223735A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same
Assignee: Mitsubishi Electric Corp
•
Filing: 1992-07-20
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Granted: 1993-06-29
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Expires: 2012-07-20
Abstract
Abstract A semiconductor integrated circuit device in which circuit functions can be remedied or changed by severing at least a portion of a circuit pattern and a method for producting such semiconductor integrated circuit device. The circuit pattern is formed on the semiconductor substrate. A field shield plate is formed on the major surface of the semiconductor substrate for electrically separating respective elements constituting the circuit. The circuit pattern includes a fuse element. The fuse element is provided on the field shield plate. The portion of the field shield plate lying directly below the fuse element is isolated from other portions of the field shield plate. In such semiconductor integrated circuit device, the portion of the field shield plate lying directly below the fuse element is separated from other portions of the field shield plate, so that short-circuiting between the semiconductor substrate and the field shield plate cannot occur even when the laser beam is irradiated with a laser beam deviation at the time of severing of the fuse element.
Inventors
- 👤 Mitsuya Kinoshita
- 👤 Kazutami Arimoto
- 👤 Kiyohiro Furutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:02
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H10W20/068; H10D; H10D84/00; H10D84/90; H10W20/40; H10W20/49; H10W20/493; H10W20/494
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
201 words
A semiconductor integrated circuit device including a fuse element, comprising: a semiconductor substrate having at least two regions where an element is formed; a conductive layer provided on an overall main surface of said semiconductor substrate except for said at least two element forming regions, with a gate oxide film interposed between the surface of said semiconductor substrate and said conductive layer, for forming a depletion layer in a portion of said main surface of said semiconductor substrate located directly beneath said conductive layer in response to application of a bias voltage, so as to electrically isolate said two element regions from each other, wherein an opening is provided in said conductive layer for exposing a portion of a surface of said gate oxide film, and a first portion of said conductive layer is provided to be electrically insulated from a second portion of said conductive layer, said first portion being located in said opening on said gate oxide film; an insulating film provided on said semiconductor substrate to cover said first and second portions of said conductive layer; and a fuse element provided on said insulating film at a portion thereof located on the first portion of said conductive layer.
Claim 2
Dependent Claim
201 words
A semiconductor integrated circuit device including a fuse element, comprising: a semiconductor substrate having at least two regions where an element is formed; a conductive layer provided on an overall main surface of said semiconductor substrate except for said at least two element forming regions, with a gate oxide film interposed between the surface of said semiconductor substrate and said conductive layer, for forming a depletion layer in a portion of said main surface of said semiconductor substrate located directly beneath said conductive layer in response to application of a bias voltage, so as to electrically isolate said two element regions from each other, wherein an opening is provided in said conductive layer for exposing a portion of a surface of said gate oxide film, and a first portion of said conductive layer is provided to be electrically insulated from a second portion of said conductive layer, said first portion being located in said opening on said gate oxide film; an insulating film provided on said semiconductor substrate to cover said first and second portions of said conductive layer; and a fuse element provided on said insulating film at a portion thereof located on the first portion of said conductive layer.
Claim 3
Dependent Claim
31 words
A semiconductor integrated circuit device as recited in claim 1, wherein: said first portion of said conductive layer is supplied with a potential equal to a potential of said semiconductor substrate.
Claim 4
Dependent Claim
25 words
A semiconductor integrated circuit device as recited in claim 1, wherein: said first portion of said conductive layer is brought into an electrically floating state.
Claim 5
Dependent Claim
25 words
A semiconductor integrated circuit device as recited in claim 1, wherein: a film thickness of said conductive layer is selected in the range of 1500Å-2000Å.
Claim 6
Dependent Claim
18 words
A semiconductor device as recited in claim 1, wherein: said fuse element is severed by laser beam irradiation.
Claim 7
Dependent Claim
160 words
A semiconductor integrated circuit device including a fuse element, comprising: a semiconductor substrate having at least two regions where an element is formed; a conductive layer provided on an overall main surface of said semiconductor substrate except for said at least two element formation regions with a gate oxide film interposed between the overall surface of said substrate and said conductive layer, for forming a depletion layer in a main portion of said main surface of said semiconductor substrate located directly beneath said conductive layer in response to application of a bias voltage, so as to electrically isolate said at least two element regions from each other, wherein an opening is provided in said conductive layer for exposing a surface of said gate oxide film; an insulating film provided on said semiconductor substrate to cover said conductive layer and to fill said opening; and a fuse element provided on said insulating film at a portion thereof located on said opening.
Claim 8
Dependent Claim
160 words
A semiconductor integrated circuit device including a fuse element, comprising: a semiconductor substrate having at least two regions where an element is formed; a conductive layer provided on an overall main surface of said semiconductor substrate except for said at least two element formation regions with a gate oxide film interposed between the overall surface of said substrate and said conductive layer, for forming a depletion layer in a main portion of said main surface of said semiconductor substrate located directly beneath said conductive layer in response to application of a bias voltage, so as to electrically isolate said at least two element regions from each other, wherein an opening is provided in said conductive layer for exposing a surface of said gate oxide film; an insulating film provided on said semiconductor substrate to cover said conductive layer and to fill said opening; and a fuse element provided on said insulating film at a portion thereof located on said opening.
Claim 9
Dependent Claim
18 words
A semiconductor device as recited in claim 6, wherein: said fuse element is severed by laser beam irradiation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-28 | 1996-12-28 | 1997-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-28 | 2000-12-28 | 2001-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-28 | 2004-12-28 | 2005-06-29 | $7700.00 | Window Closed / Lapsed |