Method of producing wiring structures for electronic materials

Claim 1

A method for production of wiring structures, comprising the steps of: providing a substrate and an interlaminar layer on top of the substrate; creating an aperture through the interlaminar layer down to a surface of the substrate, said aperture having a shoulder portion; refilling an electrically conductive material into said aperture by a bias electron cyclotron resonance-chemical vapor deposition (bias ECR-CVD) such that a deposition rate is substantially equal to an etch rate at least at said shoulder portion, and during said refilling said electrically conductive material also forming alongside said aperture on said interlaminar layer for use as a wiring layer; conducting a CVD at a greater rate of deposition than of etching above said aperture so as to form a flat conductive portion thereabove while setting an etch rate greater than a deposition rate above said shoulder portion at both sides flanking the flat portion; and applying a resist as a mask in said flat portion above said aperture and removing portions of the wiring layer extending above the flat portion so that a substantially flat upper face results on the wiring layer.

Claim 2

A method for production of wiring structures, comprising the steps of: providing a substrate and an interlaminar layer on top of the substrate; creating an aperture through the interlaminar layer down to a surface of the substrate, said aperture having a shoulder portion; refilling an electrically conductive material into said aperture by a bias electron cyclotron resonance-chemical vapor deposition (bias ECR-CVD) such that a deposition rate is substantially equal to an etch rate at least at said shoulder portion, and during said refilling said electrically conductive material also forming alongside said aperture on said interlaminar layer for use as a wiring layer; conducting a CVD at a greater rate of deposition than of etching above said aperture so as to form a flat conductive portion thereabove while setting an etch rate greater than a deposition rate above said shoulder portion at both sides flanking the flat portion; and applying a resist as a mask in said flat portion above said aperture and removing portions of the wiring layer extending above the flat portion so that a substantially flat upper face results on the wiring layer.

Claim 7

A method for production of wiring structures, comprising the steps of: providing a substrate and an interlaminar layer on top of the substrate; applying a blanket electrically conductive wiring layer onto the interlaminar layer by CVD deposition; providing a reflection-inhibiting film on the wiring layer; providing an aperture down through the reflection-inhibiting film, blanket wiring layer, and interlaminar layer down to a surface of the substrate; refilling the aperture by a bias ECR-CVD with deposition and etch rates made substantially equal to each other at a shoulder of the aperture, electrically conductive material also being deposited on the reflection inhibiting film during said refilling; by a bias ECR-CVD, effecting a levelling of the conductive material so as to remove portions of the electrically conductive material surrounding the aperture and provide a levelled recess region above the aperture; applying a resist pattern as a mask at the levelled region on top of and surrounding the aperture; and removing by etching the electrical conductive material above the reflectioninhibiting film.

Claim 8

A method for production of wiring structures, comprising the steps of: providing a substrate and an interlaminar layer on top of the substrate; applying a blanket electrically conductive wiring layer onto the interlaminar layer by CVD deposition; providing a reflection-inhibiting film on the wiring layer; providing an aperture down through the reflection-inhibiting film, blanket wiring layer, and interlaminar layer down to a surface of the substrate; refilling the aperture by a bias ECR-CVD with deposition and etch rates made substantially equal to each other at a shoulder of the aperture, electrically conductive material also being deposited on the reflection inhibiting film during said refilling; by a bias ECR-CVD, effecting a levelling of the conductive material so as to remove portions of the electrically conductive material surrounding the aperture and provide a levelled recess region above the aperture; applying a resist pattern as a mask at the levelled region on top of and surrounding the aperture; and removing by etching the electrical conductive material above the reflectioninhibiting film.

Claim 11

A method for production of wiring structures, comprising the steps of: providing a substrate; providing an interlaminar layer on the substrate; providing an aperture through the interlaminar layer down to surface of the substrate; refilling with an electrically conductive material into the aperture by a bias ECR-CVD method and wherein at a shoulder of the aperture deposition and etching rates are held substantially equal, electrically conductive material also being deposited on the interlaminar layer during said refilling; by a bias ECR-CVD, effecting a levelling of the conductive material so as to remove portions of the electrically conductive material surrounding the aperture and provide a levelled recess region above the aperture; applying an etch protection layer within the levelled recess region above the aperture; isotropically etching the electrically conductive layer so as to remove it from a top of the interlaminar layer; removing the etch protection layer above the aperture; and applying a blanket electrically conductive layer as a wiring layer on the interlaminar layer and in contact with the refilled aperture.

Claim 12

A method for production of wiring structures, comprising the steps of: providing a substrate; providing an interlaminar layer on the substrate; providing an aperture through the interlaminar layer down to surface of the substrate; refilling with an electrically conductive material into the aperture by a bias ECR-CVD method and wherein at a shoulder of the aperture deposition and etching rates are held substantially equal, electrically conductive material also being deposited on the interlaminar layer during said refilling; by a bias ECR-CVD, effecting a levelling of the conductive material so as to remove portions of the electrically conductive material surrounding the aperture and provide a levelled recess region above the aperture; applying an etch protection layer within the levelled recess region above the aperture; isotropically etching the electrically conductive layer so as to remove it from a top of the interlaminar layer; removing the etch protection layer above the aperture; and applying a blanket electrically conductive layer as a wiring layer on the interlaminar layer and in contact with the refilled aperture.

Claim 15

A method for production of wiring structures, comprising the steps of: providing a substrate and an interlaminar layer on top of the substrate; creating an aperture through the interlaminar layer down to a surface of the substrate; by a bias ECR-CVD, refilling the aperture with an electrically conductive material and also depositing electrically conductive material alongside the aperture on the interlaminar layer, a deposition rate being set slightly greater than an etch rate at a shoulder portion of the aperture, a recess being formed in the electrically conductive layer above the refilled aperture, said recess having a flat bottom portion spaced from a top of said aperture; cutting the recess outwardly in a levelling step; applying a resist pattern in the levelled out recess above the aperture; and removing outer portions of the electrically conductive layer from a top surface of the interlaminar layer but with a marginal extension of the conductive layer extending slightly beyond the refilled aperture being left on the interlaminar layer.

Claim 16

A method for production of wiring structures, comprising the steps of: providing a substrate and an interlaminar layer on top of the substrate; creating an aperture through the interlaminar layer down to a surface of the substrate; by a bias ECR-CVD, refilling the aperture with an electrically conductive material and also depositing electrically conductive material alongside the aperture on the interlaminar layer, a deposition rate being set slightly greater than an etch rate at a shoulder portion of the aperture, a recess being formed in the electrically conductive layer above the refilled aperture, said recess having a flat bottom portion spaced from a top of said aperture; cutting the recess outwardly in a levelling step; applying a resist pattern in the levelled out recess above the aperture; and removing outer portions of the electrically conductive layer from a top surface of the interlaminar layer but with a marginal extension of the conductive layer extending slightly beyond the refilled aperture being left on the interlaminar layer.

Claim 19

A method for production of wiring structures, comprising the steps of: providing a substrate and an interlaminar layer on top of the substrate; creating an aperture through the interlaminar layer down to a surface of the substrate; in a bias ECR-CVD, forming electrically conductive material in the aperture so as to refill the aperture and also forming on a top surface of the interlaminar layer an electrically conductive layer simultaneously with the refilling, the CVD being affected at a higher rate of deposition than of etching so that a recess results in the electrically conductive layer having a bottom thereof spaced from and above the refilled aperture; levelling out the recess so as to detract at left and right sides of the recess; removing a portion of the electrically conductive layer at said bottom of the recess by an anisotropic etching down to the refilled aperture; applying a recess pattern to cover the refilled aperture; removing outwardly lying portions of the electrically conductive layer on the interlaminar layer; and applying an electrically conductive material as a wiring layer on top of the interlaminar layer and in contact with the refilled aperture.

Claim 20

A method for production of wiring structures, comprising the steps of: providing a substrate and an interlaminar layer on top of the substrate; creating an aperture through the interlaminar layer down to a surface of the substrate; in a bias ECR-CVD, forming electrically conductive material in the aperture so as to refill the aperture and also forming on a top surface of the interlaminar layer an electrically conductive layer simultaneously with the refilling, the CVD being affected at a higher rate of deposition than of etching so that a recess results in the electrically conductive layer having a bottom thereof spaced from and above the refilled aperture; levelling out the recess so as to detract at left and right sides of the recess; removing a portion of the electrically conductive layer at said bottom of the recess by an anisotropic etching down to the refilled aperture; applying a recess pattern to cover the refilled aperture; removing outwardly lying portions of the electrically conductive layer on the interlaminar layer; and applying an electrically conductive material as a wiring layer on top of the interlaminar layer and in contact with the refilled aperture.