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US5200805A
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Silicon carbide:metal carbide alloy semiconductor and method of making the same
Assignee: Raytheon Co
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Filing: 1987-12-28
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Granted: 1993-04-06
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Expires: 2007-12-28
Abstract
Abstract A new type of semiconductor material is disclosed which consists of a β-SiC:metal carbide alloy having the general formula Si w (metal 1) x (metal 2) y (metal 3) z C, where w+x+y+z=1 and 1>w>0. The metals are selected from the group consisting of Ti, Hf, Zr, V, Ta, Mo, W and Nb, with Ti, Hf, and Zr preferred. By selecting appropriate proportions of metal carbide and SiC, the alloy's bandgap may be tailored to any desired level between the bandgaps of the metal carbide and SiC. Semiconductor devices are preferably formed by epitaxially growing a layer of the new alloy upon a substrate having a β-SiC or TiC type crystal structure. In addition to retaining the benefits of single-bandgap β-SiC with certain advantages, the new alloys make it possible to implement various electrical devices that cannot be achieved with β-SiC, and also have a potential for bandfolded superlattices for infrared detectors and lasers.
Inventors
- 👤 James D. Parsons
- 👤 Oscar Stafsudd
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:28
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/122; H10F77/1226; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
49 words
A semiconductor material comprising a metal carbide: β-SiC alloy with a homogeneous single phase cubic crystal structure and having the formula Si w (metal 1) x (metal 2) y (metal 3) z C, where w+x+y+z=1, 1>w>0 and said metals have lattice parameters within about 5% of that of β-SiC.
Claim 2
Dependent Claim
49 words
A semiconductor material comprising a metal carbide: β-SiC alloy with a homogeneous single phase cubic crystal structure and having the formula Si w (metal 1) x (metal 2) y (metal 3) z C, where w+x+y+z=1, 1>w>0 and said metals have lattice parameters within about 5% of that of β-SiC.
Claim 3
Dependent Claim
29 words
The semiconductor material of claim 1, in which metals 1, 2 and 3 are each selected from the following metals: Ti, Hf, Zr, V, Ta, Mo, W and Nb.
Claim 4
Dependent Claim
24 words
The semiconductor material of claim 2, in which metals 1, 2 and 3 are each selected from the following metals: Ti, Hf and Zr.
Claim 5
Dependent Claim
8 words
The semiconductor material of claim 1, wherein y=z=0.
Claim 6
Dependent Claim
25 words
The semiconductor material of claim 4, in which metal 1 is selected from the following metals: Ti, Hf, Zr, V, Ta, Mo, W and Nb.
Claim 7
Dependent Claim
20 words
The semiconductor material of claim 5, in which metal 1 is selected from the following metals: Ti, Hf and Zr.
Claim 8
Dependent Claim
17 words
The semiconductor material of claim 1, wherein said material has a β-SiC or TiC type crystal structure.
Claim 9
Dependent Claim
40 words
The semiconductor material of claim 1, wherein the relative proportions of metal carbide and β-SiC in said alloy are selected to yield a bandgap energy level for the alloy between the bandgap energy levels of the metal carbide and SiC.
Claim 10
Dependent Claim
74 words
A semiconductor material comprising an alloy of β-SiC and at least one metal, said alloy having a homogeneous single phase cubic crystal structure, the metal being selected so that the metal-carbon bonds in the alloy are predominantly covalent, only electrons in the outermost orbitals of the outermost electron shell contribute to bonding, only the outermost d orbital electrons are available for conduction, and its lattice parameters are within about 5% of that of β-SiC.
Claim 11
Dependent Claim
74 words
A semiconductor material comprising an alloy of β-SiC and at least one metal, said alloy having a homogeneous single phase cubic crystal structure, the metal being selected so that the metal-carbon bonds in the alloy are predominantly covalent, only electrons in the outermost orbitals of the outermost electron shell contribute to bonding, only the outermost d orbital electrons are available for conduction, and its lattice parameters are within about 5% of that of β-SiC.
Claim 12
Dependent Claim
19 words
The semiconductor material of claim 9, said metal being selected from the group consisting of Ti, Hf and Zr.
Claim 13
Dependent Claim
90 words
An electrical semiconductor device, comprising: a chemically stable, lattice matching substrate, an epitaxial semiconductor layer on the substrate having a homogeneous single phase β-SiC or TiC type crystal structure, said layer formed from a semiconductor material which comprises a metal-carbide SiC alloy having the formula Si w (metal 1) x (metal 2) y (metal 3) z C, where w+x+y+z=1, 1>w>0 and said metal have lattice parameters within about 5% of that of β-SiC, and an electric circuit device formed upon and incorporating at least a portion of said semiconductor layer.
Claim 14
Dependent Claim
90 words
An electrical semiconductor device, comprising: a chemically stable, lattice matching substrate, an epitaxial semiconductor layer on the substrate having a homogeneous single phase β-SiC or TiC type crystal structure, said layer formed from a semiconductor material which comprises a metal-carbide SiC alloy having the formula Si w (metal 1) x (metal 2) y (metal 3) z C, where w+x+y+z=1, 1>w>0 and said metal have lattice parameters within about 5% of that of β-SiC, and an electric circuit device formed upon and incorporating at least a portion of said semiconductor layer.
Claim 15
Dependent Claim
29 words
The semiconductor device of claim 11, in which metals 1, 2 and 3 are each selected from the following metals: Ti, Hf, Zr, V, Ta, Mo, W and Nb.
Claim 16
Dependent Claim
24 words
The semiconductor device of claim 12, in which metals 1, 2 and 3 are each selected from the following metals: Ti, Hf and Zr.
Claim 17
Dependent Claim
8 words
The semiconductor device of claim 11, wherein y=z=0.
Claim 18
Dependent Claim
25 words
The semiconductor device of claim 14, in which metal 1 is selected from the following metals: Ti, Hf, Zr, V, Ta, Mo, W and Nb.
Claim 19
Dependent Claim
20 words
The semiconductor device of claim 15, in which metal 1 is selected from the following metals: Ti, Hf and Zr.
Claim 20
Dependent Claim
14 words
The semiconductor device of claim 11, wherein said substrate comprises a single crystal TiC.
Claim 21
Dependent Claim
40 words
The semiconductor device of claim 11, wherein the relative proportions of metal carbide and SiC in said alloy are selected to yield a bandgap energy level for the alloy between the bandgap energy levels of the metal carbide and SiC.
References Cited (Backward Citations)
US3201666A
Cited
US3047439A
Cited
US3517281A
Cited
US3577285A
Cited
US3607448A
Cited
US3662458A
Cited
US3602777A
Cited
US3972749A
Cited
JPS5120869A
Cited
US4028149A
Cited
US4161743A
Cited
EP0107356A2
Cited
US4912063A
Cited
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| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
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