US3602777A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts
Assignee: Westinghouse Electric Corp
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Filing: 1970-04-21
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Granted: 1971-08-31
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Expires: 1990-04-21
Abstract
Abstract This disclosure relates to a semiconductor device comprised of a body of silicon carbide. The body of silicon carbide has at least two regions of opposite type semiconductivity with a pin junction between the regions of opposite type semiconductivity. An electrical contact consisting of silicon carbide is affixed to each region.
Inventors
- 👤 Herbert S Berman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:26
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/62; H10F; H10F99/00
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
21 words
The device of claim 1 in which electrical leads consisting of metallized ceramics are affixed to the silicon carbide electrical contacts.
Claim 2
Dependent Claim
25 words
The device of claim 2 in which the metallized ceramic leads are affixed to the silicon carbide electrical contacts by another layer of said solder.
Claim 3
Dependent Claim
33 words
The device of claim 1 in which one of the electrical contacts is annular in shape whereby a portion of one surface of the body of silicon carbide is exposed to ambient radiation.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-30 | 1975-03-01 | 1975-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-30 | 1979-03-01 | 1979-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-30 | 1983-03-01 | 1983-08-31 | $7700.00 | Window Closed / Lapsed |