US5200641A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device structure including bending-resistant radiating layer
Assignee: Mitsubishi Electric Corp
•
Filing: 1991-07-02
•
Granted: 1993-04-06
•
Expires: 2011-07-02
Abstract
Abstract A high frequency and high power semiconductor device includes a semiconductor substrate having an active element on the front surface and a radiating metal layer for radiating heat generated by the active element on the rear surface of the substrate. The radiating metal layer is disposed on a part of the rear surface of the substrate directly opposite the active element. Further, a dispersion layer having a linear expansion coefficient equal to that of the substrate material and differing from that of the radiating metal layer is disposed on the rear surface of said semiconductor substrate but not directly opposite the active element.
Inventors
- 👤 Katsuya Kosaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:13
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/258; H10W44/00; H10W44/20; H10W70/00; H10W70/099; H10W70/60; H10W70/611; H10W70/614; H10W72/00; H10W72/071; H10W72/073; H10W74/00; H10W74/10; H10W74/131; H10W74/142
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
161 words
A semiconductor device structure comprising: a semiconductor substrate having opposed front and rear surfaces, a linear thermal expansion coefficient, and an active semiconductor device disposed in said semiconductor substrate at a part of the front surface; and a radiating layer disposed on the rear surface of said semiconductor substrate for radiating heat generated by said active semiconductor device, said radiating layer including a metal portion disposed on a part of the rear surface of said semiconductor substrate that is directly opposite the part of the front surface of said semiconductor substrate on which said active semiconductor device is disposed and a composite portion disposed on the rear surface of said semiconductor substrate surrounding and contacting said metal portion, said composite portion including a metal dispersed in a dispersion medium in a concentration so that said composite portion has a linear thermal expansion coefficient substantially equal to that of said semiconductor substrate, said dispersion medium having a composition different from said metal.
Claim 2
Dependent Claim
161 words
A semiconductor device structure comprising: a semiconductor substrate having opposed front and rear surfaces, a linear thermal expansion coefficient, and an active semiconductor device disposed in said semiconductor substrate at a part of the front surface; and a radiating layer disposed on the rear surface of said semiconductor substrate for radiating heat generated by said active semiconductor device, said radiating layer including a metal portion disposed on a part of the rear surface of said semiconductor substrate that is directly opposite the part of the front surface of said semiconductor substrate on which said active semiconductor device is disposed and a composite portion disposed on the rear surface of said semiconductor substrate surrounding and contacting said metal portion, said composite portion including a metal dispersed in a dispersion medium in a concentration so that said composite portion has a linear thermal expansion coefficient substantially equal to that of said semiconductor substrate, said dispersion medium having a composition different from said metal.
Claim 3
Dependent Claim
31 words
A semiconductor device structure as defined in claim 1 wherein said semiconductor substrate is GaAs, said composite portion of said radiating layer comprises nickel dispersed in one of silicon and carbon.
Claim 4
Dependent Claim
32 words
A semiconductor device structure as defined in claim 1 wherein said semiconductor substrate is GaAs and said composite portion of said radiating layer comprises copper dispersed in one of silicon and carbon.
Claim 5
Dependent Claim
32 words
A semiconductor device structure as defined in claim 1 wherein said semiconductor substrate is GaAs and said composite portion of said radiating layer comprises gold dispersed in one of silicon and carbon.
Claim 6
Dependent Claim
32 words
A semiconductor device structure as defined in claim 1 wherein said metal portion has a linear thermal expansion coefficient that is different from the linear thermal expansion coefficient of said composite portion.
Claim 7
Dependent Claim
31 words
A semiconductor device structure as defined in claim 1 wherein said dispersion medium is selected from the group consisting of silicon, carbon, silicon oxide, silicon dioxide, silicon carbide, and silicon nitride.
Claim 8
Dependent Claim
28 words
A semiconductor device structure as defined in claim 1 wherein said metal dispersed in said dispersion medium is selected from the group consisting of copper, nickel, and gold.
Claim 9
Dependent Claim
24 words
A semiconductor device structure as defined in claim 1 including a metal layer interposed between and contacting said semiconductor substrate and said radiating layer.
Claim 10
Dependent Claim
25 words
A semiconductor device structure as defined in claim 8 wherein said metal layer is gold and has a thickness of about one to two microns.,
Claim 11
Dependent Claim
22 words
A semiconductor device structure as defined in claim 1 including a metal layer disposed on said radiating layer opposite said semiconductor substrate.
Claim 12
Dependent Claim
15 words
A semiconductor device structure as defined in claim 10 wherein said metal layer is gold.
Claim 13
Dependent Claim
136 words
A semiconductor device structure comprising: a semiconductor substrate having opposed front and rear surfaces and an active semiconductor device disposed in said semiconductor substrate at a part of the front surface; and a radiating layer disposed on the rear surface of said semiconductor substrate for radiating heat generated by said active semiconductor device, said radiating layer including a metal portion disposed on a part of the rear surface of said semiconductor substrate that is directly opposite the part of the front surface of said semiconductor substrate on which said active semiconductor device is disposed and a laminated portion disposed on the rear surface of said semiconductor substrate surrounding and contacting said metal portion, said laminated portion including alternatingly laminated first and second metal films having different compositions for generating thermal expansion stresses in mutually opposite directions.
Claim 14
Dependent Claim
136 words
A semiconductor device structure comprising: a semiconductor substrate having opposed front and rear surfaces and an active semiconductor device disposed in said semiconductor substrate at a part of the front surface; and a radiating layer disposed on the rear surface of said semiconductor substrate for radiating heat generated by said active semiconductor device, said radiating layer including a metal portion disposed on a part of the rear surface of said semiconductor substrate that is directly opposite the part of the front surface of said semiconductor substrate on which said active semiconductor device is disposed and a laminated portion disposed on the rear surface of said semiconductor substrate surrounding and contacting said metal portion, said laminated portion including alternatingly laminated first and second metal films having different compositions for generating thermal expansion stresses in mutually opposite directions.
Claim 15
Dependent Claim
38 words
A semiconductor device structure as defined in claim 12 wherein said semiconductor substrate is GaAs, said first metal film is selected from the group consisting of molybdenum, tungsten, and tungsten silicide, and said second metal film comprises nickel.
Claim 16
Dependent Claim
24 words
A semiconductor device structure as defined in claim 12 including a metal layer interposed between and contacting said semiconductor substrate and said radiating layer.
Claim 17
Dependent Claim
25 words
A semiconductor device structure as defined in claim 14 wherein said metal layer is gold and has a thickness of about one to two microns.
Claim 18
Dependent Claim
22 words
A semiconductor device structure as defined in claim 12 including a metal layer disposed on said radiating layer opposite said semiconductor substrate.
Claim 19
Dependent Claim
15 words
A semiconductor device structure as defined in claim 16 wherein said metal layer is gold.
References Cited (Backward Citations)
US3986196A
Cited
US4025997A
Cited
DE3221199A1
Cited
JPS58135658A
Cited
DE3314996A1
Cited
JPS5961052A
Cited
JPS59135737A
Cited
FR2546878A1
Cited
EP0166633A1
Cited
JPS6123350A
Cited
US4835598A
Cited
US4893174A
Cited
JPS6380555A
Cited
JPS63133555A
Cited
US4910583A
Cited
US4965659A
Cited
JPH01109754A
Cited
JPH01120853A
Cited
GB2213638A
Cited
FR2624654A1
Cited
JPH01258448A
Cited
US5012387A
Cited
US4941067A
Cited
EP0424858A2
Cited
US4994903A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |