US4965659A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Member for a semiconductor structure
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-06-28
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Granted: 1990-10-23
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Expires: 2008-06-28
Abstract
Abstract A member for a semiconductor structure is constructed, for example, as a mounting, or as a cover, or as a heat sink. Such a component is obtained by joining an aluminum nitride insulating substrate and a radiating element. The metal material for forming the radiating member has a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0×10 -6 /K -1 . Preferably the material forming the radiating element is made of a tungsten alloy containing copper by not more than 5 percent by weight.
Inventors
- 👤 Akira Sasame
- 👤 Hitoyuki Sakanoue
- 👤 Masaya Miyake
- 👤 Akira Yamakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:14
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; H10W40/00; H10W40/20; H10W40/25; H10W40/255; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
183 words
A semiconductor structure, comprising a semiconductor device, an insulating substrate formed as an aluminum nitride sintered body having a first major surface facing said semiconductor device, and a heat radiating heat sink joined to said insulating substrate on a second major surface of said insulating substrate opposite said first major surface, said heat radiating heat sink being made of a metal material having a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0×10 -6 /K, wherein said thermal conductivity and siad thermal expansion coefficient of said heat radiating heat sink are substantially equal to a respective thermal conductivity and thermal expansion coefficient of siad aluminum nitride of said insulating substrate, said metal material of said heat sink being selected from a first group consisting of tungsten and tungsten alloy, said tungsten alloy containing at least one metal selected from a second group consisting of nickel, copper, iron and cobalt, said second group being present in said tungsten alloy in a proportion of not more than ten percent by weight of said tungsten alloy.
Claim 2
Dependent Claim
183 words
A semiconductor structure, comprising a semiconductor device, an insulating substrate formed as an aluminum nitride sintered body having a first major surface facing said semiconductor device, and a heat radiating heat sink joined to said insulating substrate on a second major surface of said insulating substrate opposite said first major surface, said heat radiating heat sink being made of a metal material having a thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0×10 -6 /K, wherein said thermal conductivity and siad thermal expansion coefficient of said heat radiating heat sink are substantially equal to a respective thermal conductivity and thermal expansion coefficient of siad aluminum nitride of said insulating substrate, said metal material of said heat sink being selected from a first group consisting of tungsten and tungsten alloy, said tungsten alloy containing at least one metal selected from a second group consisting of nickel, copper, iron and cobalt, said second group being present in said tungsten alloy in a proportion of not more than ten percent by weight of said tungsten alloy.
Claim 3
Dependent Claim
20 words
The semiconductor structure of claim 1, wherein said semiconductor device is secured to said first major surface of said substrate.
Claim 4
Dependent Claim
24 words
The semiconductor structure of claim 1, wherein said insulating substrate includes a covering means for covering and protecting said semiconductor device on said substrate.
Claim 5
Dependent Claim
27 words
The semiconductor structure of claim 1, further comprising a metallized layer formed on at least one of said first and second major surfaces of said insulating substrate.
Claim 6
Dependent Claim
45 words
The semiconductor structure of claim 4, wherein said metallized layer contains at least one metal selected from a third group consisting of tungsten, molybdenum, and at least one compound selected from a fourth group consisting of aluminum nitride, aluminum oxide, aluminum oxynitride, and calcium oxide.
Claim 7
Dependent Claim
21 words
The semiconductor structure of claim 4, further comprising soldering means for joining said metallized layer to said heat radiating heat sink.
Claim 8
Dependent Claim
24 words
The semiconductor structure of claim 6, further comprising a plating layer formed on a junction surface between said metallized layer and said soldering means.
Claim 9
Dependent Claim
26 words
The semiconductor structure of claim 6, further comprising a plating layer formed on a junction surface between said heat radiating heat sink and said soldering means.
Claim 10
Dependent Claim
30 words
The semiconductor structure of claim 1, wherein said copper of said second group is present in a proportion of not more than 5 percent by weight of said tungsten alloy.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-10-22 | 1994-04-23 | 1994-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-22 | 1998-04-23 | 1998-10-23 | $3760.00 | Window Closed / Lapsed |
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