EP0100232A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Substrate for semiconductor apparatus
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1983-07-25
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Granted: —
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Expires: 2003-07-25
Abstract
Abstract This invention relates to a substrate for semiconductor apparatus loading a semiconductor chip in integrated circuit apparatus and is characterized in that a sintered compact containing copper of 2 to 30 wt. % in tungsten and/or molybde- ium is used as the substrate having the heat radiation capable af efficiently radiating heat developed from the loaded semiconductor chip and thermal expansion coefficient similar to those of semiconductor chip and other enclosure material except for the substrate.
Inventors
- 👤 Mituo C/O Sumitomo Electric Ind. Ltd. Osada
- 👤 Yoshinari C/O Sumitomo Electric Ind. Ltd. Amano
- 👤 Nobuo C/O Sumitomo Electric Ind. Ltd. Ogasa
- 👤 Akira C/O Sumitomo Electric Ind. Ltd. Ohtsuka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 15:01
CPC Classifications
B; B22; B22F; B22F3/00; B22F3/24; H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/257; H10W70/00; H10W70/60; H10W70/67; H10W70/68; H10W70/6875; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/30; H10W72/321; H10W72/325; H10W72/351; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T428/00; Y10T428/12; Y10T428/12014; Y10T428/12028; Y10T428/12049; Y10T428/12056; Y10T428/12493
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
26 words
A substrate for semiconductor apparatus for loading a semiconductor chip, characterized by comprising a material containing copper of 2 to 30 wt.% in tungsten and/or molybdenum.
Claim 2
Dependent Claim
26 words
A substrate for semiconductor apparatus for loading a semiconductor chip, characterized by comprising a material containing copper of 2 to 30 wt.% in tungsten and/or molybdenum.
Claim 3
Dependent Claim
47 words
A substrate for semiconductor apparatus according to claim 1, characterized in that said material containing copper of 2 to 30 wt.% in tungsten and/or molybdenum is coincident of its thermal expansion co-efficient with those of said semiconductor chip and an enclosure material and has high thermal conductivity.
Claim 4
Dependent Claim
27 words
A substrate for semiconductor apparatus according to claim 1 or 2, characterized in that copper is contained uniformly in tungsten and/or molybdenum by use of powder metallurgy.
Claim 5
Dependent Claim
21 words
A substrate for semiconductor apparatus according to any preceding claim, characterized in that it comprises a sinter infiltrated by the copper.
Claim 6
Dependent Claim
26 words
A substrate for semiconductor apparatus according to any preceding claim, characterized in that it has added thereto an iron group element of 20 wt.% or less.
Claim 7
Dependent Claim
21 words
A substrate for semiconductor apparatus according to claim 5, characterized in that the iron group element added is below 5 wt.%.
Claim 8
Dependent Claim
24 words
A substrate for semiconductor apparatus according to any preceding claim, characterized in that it includes a thin-layer coating of a ceramic or organic insulator.
Claim 9
Dependent Claim
19 words
A substrate for semiconductor apparatus according to claim 1, characterized in that said semiconductor chip comprises Si or GaAs.
References Cited (Backward Citations)
No citation records indexed.
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