US4910583A
Expired / Lapsed
US
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Semiconductor body with heat sink
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1988-06-02
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Granted: 1990-03-20
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Expires: 2008-06-02
Abstract
Abstract The invention relates to a semiconductor body, which is composed of at least one semiconductor device, especially one impatt-diode, with integrated heat sink. The series of semiconductor layers, out of which the semiconductor device is produced, is made up of one first p + -doped semiconductor layer, which has the function of an etching stop layer, of a contact layer and a buffer layer at the same time.
Inventors
- 👤 Wolfgang Behr
- 👤 Karl Strohm
- 👤 Johann F. Luy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:41
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/40; H10W; H10W40/00; H10W40/10; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/698
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
56 words
A semiconductor body, comprising: a semiconductor substrate; a semiconductor component fabricated from a plurality of semiconductor layers grown on a substrate, said substrate defining a window extending completely through said substrate; and a heat sink disposed in said window extending completely through said substrate up to a first semiconductor layer of said plurality of semiconductor layers.
Claim 2
Dependent Claim
56 words
A semiconductor body, comprising: a semiconductor substrate; a semiconductor component fabricated from a plurality of semiconductor layers grown on a substrate, said substrate defining a window extending completely through said substrate; and a heat sink disposed in said window extending completely through said substrate up to a first semiconductor layer of said plurality of semiconductor layers.
Claim 3
Dependent Claim
23 words
A semiconductor body according to claim 1, wherein said semiconductor substrate is formed of silicon having a resistivity of at least 3,000 Ωcm.
Claim 4
Dependent Claim
24 words
A semiconductor body according to claim 1, wherein a first layer of said plurality of semiconductor layers is a p + -doped Silicon layer.
Claim 5
Dependent Claim
18 words
A semiconductor body according to claim 2, wherein the p + -doped Silicon layer is doped with Boron.
Claim 6
Dependent Claim
20 words
A semiconductor body according to claim 3, wherein the p + -doped Silicon layer is doped with Boron and Germanium.
Claim 7
Dependent Claim
37 words
A semiconductor body according to claim 1, wherein a first metallization layer is disposed on said semiconductor component opposite said semiconductor substrate and a second metallization layer is disposed on said semiconductor substrate opposite said semiconductor component.
Claim 8
Dependent Claim
52 words
A semiconductor body according to claim 6 wherein a window is formed in said second metallization layer, said window defined by said semiconductor substrate being etched to terminate at a p + -doped layer of Silicon of said semiconductor component, said heat sink being formed of conducting metal filling up said window.
Claim 9
Dependent Claim
15 words
A semiconductor body according to claim 1, wherein said heat sink is formed of Gold.
Claim 10
Dependent Claim
17 words
A semiconductor body according to claim 1, wherein said semiconductor body is formed as an impatt diode.
Claim 11
Dependent Claim
20 words
A semiconductor body according to claim 1, wherein a semiconductor body is formed integrally and monolithically with an RF circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-19 | 1993-09-18 | 1994-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-19 | 1997-09-18 | 1998-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-19 | 2001-09-18 | 2002-03-20 | $7700.00 | Window Closed / Lapsed |