Patent US5182233A successfully refreshed from Google Patents.
US5182233A
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US
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Compound semiconductor pellet, and method for dicing compound semiconductor wafer
Assignee: Toshiba Corp
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Filing: 1991-10-07
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Granted: 1993-01-26
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Expires: 2011-10-07
Abstract
Abstract A compound semiconductor pellet has a zincblende crystal structure and is formed of a III-V compound semiconductor, such as GaAs. The major surface of the pellet and side surfaces thereof are both {100} planes. To obtain this type of pellet, [010] and [001] directions are selected as dicing directions. In the case of a crystal having a zincblende crystal structure, a direction which forms 45° with reference to a cleavage plane of the crystal is selected as a dicing direction.
Inventors
- 👤 Kazuhiko Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:53
CPC Classifications
H; H10; H10P; H10P52/00; Y; Y10; Y10S; Y10S148/00; Y10S148/028; Y10T; Y10T83/00; Y10T83/04; Y10T83/0505
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
94 words
A method for dicing a compound semiconductor wafer, comprising the steps of: a) providing a single-crystal III-V compound semiconductor wafer having first dicing lines positioned a distance apart in a [001] direction, second dicing lines positioned a distance apart in a [010] direction, and an orientation flat with a {100} exposed surface; b) dicing said semiconductor wafer along said first dicing lines in the [001] direction by use of a blade dicer; and c) dicing said compound semiconductor wafer along said second dicing lines in the [010] direction by use of a blade dicer.
Claim 2
Independent Claim
94 words
A method for dicing a compound semiconductor wafer, comprising the steps of: a) providing a single-crystal III-V compound semiconductor wafer having first dicing lines positioned a distance apart in a [001] direction, second dicing lines positioned a distance apart in a [010] direction, and an orientation flat with a {100} exposed surface; b) dicing said semiconductor wafer along said first dicing lines in the [001] direction by use of a blade dicer; and c) dicing said compound semiconductor wafer along said second dicing lines in the [010] direction by use of a blade dicer.
Claim 3
Dependent Claim
15 words
The method according to claim 11, wherein said single-crystal III-V compound semiconductor wafer is GaAs.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-26 | 1996-07-27 | 1997-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-26 | 2000-07-27 | 2001-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-26 | 2004-07-27 | 2005-01-26 | $7700.00 | Window Closed / Lapsed |