Semiconductor pressure transducer

Claim 2

A semiconductor pressure transducer comprising: a diaphragm; and a pressure detector; said pressure detector including: an Si single crystal which is so formed as to have a crystal face of {110} as the surface to which a compression force is applied, and which is attached to said pressure detector such that said crystal face is parallel to said diaphragm; a first pair of opposing electrodes provided on said Si single crystal in the direction having an angle of 45 degrees with the direction of <001> on said crystal face of {110} and a second pair of opposing electrodes provided on said Si single crystal in the direction having an angle of 45 degrees with the direction of <110> of said Si single crystal, either of said first or second pair of electrodes serving as output electrodes and the other pair serving as input electrodes; a composite seat with one end portion and the other end portion being made of different materials from each other, said one end portion being bonded to said crystal face of {110} of said Si single crystal and said other end portion being in contact with said diaphragm so as to transmit the pressure applied to said diaphragm perpendicularly to said crystal face of said Si single crystal as a compression force; and a support base which is bonded to the opposite surface of said Si single crystal relative to the surface to which said seat is bonded and which supports said Si single crystal; said semiconductor pressure transducer converting the pressure applied to said diaphragm into a compression force which acts perpendicularly to said crystal face of said Si single crystal and outputting the voltage corresponding to said compression force from said output electrodes.

Claim 3

A semiconductor pressure transducer according to claim 1, wherein said composite seat comprises said one end portion made of a material electrically insulated from said Si single crystal and having a thermal expansion coefficient approximate to that of said Si single crystal, and said other end portion made of a material having a more excellent mechanical strength or thermal insulation property than the material used for the former portion.

Claim 4

A semiconductor pressure transducer according to claim 1, wherein said Si single crystal has a rectangular crystal face and uniform thickness and impurity density.

Claim 5

A semiconductor pressure transducer according to claim 1, said seat has a height of not less than d/2 which is assumed to be the radius of the circumcircle of the bonding area at which said Si single crystal and said seat are bonded with each other.

Claim 6

A semiconductor pressure transducer according to claim 1, wherein said Si single crystal is so controlled as to have an impurity density in the range of 1×10 15 /cm 3 to 1×10 21 /cm 3 an a thickness of not more than 50 μm.

Claim 7

A semiconductor pressure transducer according to claim 5, wherein said pressure detector includes a stem, said stem including said support base, a plurality of output electrode terminals for taking out electric signals output from said output electrodes to the outside, a plurality of input electrode terminals for applying a current from the outside to said input electrodes, and a holding means for integrally holding said input electrode terminals, said output electrode terminals and said support base.

Claim 8

A semiconductor pressure transducer according to claim 1, wherein said pressure detector includes a semiconductor layer so formed as to have a crystal face of {110} which is covered with an insulation film, said Si single crystal is grown on said insulation film of said semiconductor layer so as to have a crystal face of (110) as the surface to which a compression force is applied, an impurity density controlled in the range of 1×10 15 /cm 3 to 1×10 21 /cm 3 and a thickness of not more than 50 μm, said electrodes and said seat are provided on said crystal face of (110) on said Si single crystal, and said support base is bonded to the opposite surface of said semiconductor layer relative to the surface on which said insulation film is formed.

Claim 9

A semiconductor pressure transducer according to claim 7, wherein said pressure detector includes a stem, said stem including said support base, a plurality of output electrode terminals for taking out electric signals output from said output electrodes to the outside, a plurality of input electrode terminals for applying a current from the outside to said input electrodes, and a holding means for integrally holding said input electrode terminals, said output electrode terminals and said support base.

Claim 10

A semiconductor pressure transducer according to claim 1, wherein said Si single crystal of said pressure detector includes a conduction layer so formed as to have a crystal face of {110} as the surface to which a compression force is applied and an impurity density controlled in the range of 1×10 15 /cm 3 to 1×10 21 /cm 3 , and an electrical insulation layer provided adjacent to said conduction layer, said first pair of electrodes are provided on said conduction layer in the direction having an angle of 45 degrees with the direction of <001> of said Si single crystal and a second pair of electrodes are provided on said conduction layer in the direction having an angle of 45 degrees with the direction of <110> of said Si single crystal, said seat is bonded to said crystal face of {110} of said Si single conduction layer so as to transmit said compression force perpendicularly to said crystal face; and said support base is bonded to the opposite surface of said electrically insulation layer relative to the surface to which said conduction layer is bonded.

Claim 11

A semiconductor pressure transducer according to claim 9, wherein said pressure detector includes a stem, said stem including said support base, a plurality of output electrode terminals for taking out electric signals output from said output electrodes to the outside, a plurality of input electrode terminals for applying a current from the outside to said input electrodes, and a holding means for integrally holding said input electrode terminals, said output electrode terminals and said support base.

Claim 12

A semiconductor pressure transducer according to claim 1, wherein said pressure detector includes a stem, said stem including said support base, a plurality of output electrode terminals for taking out electric signals output from said output electrodes to the outside, a plurality of input electrode terminals for applying a current from the outside to said input electrodes, and a holding means for integrally holding said input electrode terminals, said output electrode terminals and said support base.

Claim 13

A semiconductor pressure transducer according to claim 11, wherein said stem further includes a ring for integrally securing said input electrode terminals, said output electrode terminals and said support base thereto by using sealing glass.

Claim 14

A semiconductor pressure transducer according to claim 1, wherein said diaphragm is provided on the surface thereof with a threaded hole in the direction in which pressure is applied, and an adjust screw is engaged with said threaded hole so as to deform said diaphragm in the direction in which pressure is applied, thereby applying a preload to said Si single crystal.

Claim 15

A semiconductor pressure transducer according to claim 13, wherein said adjust screw is provided with a narrow portion having a predetermined screw breaking strength.

Claim 16

A semiconductor pressure transducer according to claim 1, wherein said diaphragm is provided in the vicinity of the central portion of the surface thereof with a protrusion which is engaged with a recessed portion provided at a block portion having a large heat capacity so as to secure said block portion to the surface of said diaphragm.

Claim 17

A semiconductor pressure transducer according to claim 15, wherein said diaphragm is formed from a material exhibiting a good spring characteristic at a high temperature, and said block portion is formed from a material having large specific heat and heat conductivity.

Claim 18

In a semiconductor pressure transducer for high-temperature fluid for transmitting the pressure of high-temperature fluid applied to the surface of a diaphragm to a pressure detector as a compression force and measuring said pressure of said high-temperature fluid on the basis of an electric signal output from said pressure detector, the improvement comprising: said pressure detector including an Si single crystal which is so formed as to have a crystal face of {110} as the surface to which a compression force is applied, and which is attached to said pressure detector such that said crystal face is parallel to said diaphragm, a first pair of opposing electrodes provided on said Si single crystal in the direction having an angle of 45 degrees with the direction of <001> on said crystal face of {110} and a second pair of opposing electrodes provided on said Si single crystal in the direction having an angle of 45 degrees with the direction of <110> of said Si single crystal, either of said first or second pair of electrodes serving as output electrodes and the other pair serving as input electrodes, a composite seat with one end thereof bonded to said crystal face of {110} of said Si single crystal and the other end thereof in contact with said diaphragm so as to transmit the pressure applied to said diaphragm perpendicularly to said crystal face of said Si single crystal as a compression force, and a stem which is bonded to the opposite surface of said Si single crystal relative to the surface to which said seat is bonded; said stem including a support base which is bonded to the opposite surface of said Si single crystal relative to the surface to which said seat is bonded and which supports said Si single crystal, a plurality of output electrode terminals for taking out electric signals output from said output electrodes to the outside, a plurality of input electrode terminals for applying a current from the outside to said input electrodes, and a holding means for integrally holding said input electrode terminals, said output electrode terminals and said support base; said semiconductor pressure transducer applying a compression force perpendicularly to said crystal face of said Si single crystal while applying a current from said input electrode terminals to said Si single crystal and outputting from said output electrode terminals the voltage corresponding to the pressure of said high-temperature fluid which acts on the surface of said diaphragm.

Claim 19

In a semiconductor pressure transducer for high-temperature fluid for transmitting the pressure of high-temperature fluid applied to the surface of a diaphragm to a pressure detector as a compression force and measuring said pressure of said high-temperature fluid on the basis of an electric signal output from said pressure detector, the improvement comprising: said pressure detector including an Si single crystal which is so formed as to have a crystal face of {110} as the surface to which a compression force is applied, and which is attached to said pressure detector such that said crystal face is parallel to said diaphragm, a first pair of opposing electrodes provided on said Si single crystal in the direction having an angle of 45 degrees with the direction of <001> on said crystal face of {110} and a second pair of opposing electrodes provided on said Si single crystal in the direction having an angle of 45 degrees with the direction of <110> of said Si single crystal, either of said first or second pair of electrodes serving as output electrodes and the other pair serving as input electrodes, a composite seat with one end thereof bonded to said crystal face of {110} of said Si single crystal and the other end thereof in contact with said diaphragm so as to transmit the pressure applied to said diaphragm perpendicularly to said crystal face of said Si single crystal as a compression force, and a stem which is bonded to the opposite surface of said Si single crystal relative to the surface to which said seat is bonded; said stem including a support base which is bonded to the opposite surface of said Si single crystal relative to the surface to which said seat is bonded and which supports said Si single crystal, a plurality of output electrode terminals for taking out electric signals output from said output electrodes to the outside, a plurality of input electrode terminals for applying a current from the outside to said input electrodes, and a holding means for integrally holding said input electrode terminals, said output electrode terminals and said support base; said semiconductor pressure transducer applying a compression force perpendicularly to said crystal face of said Si single crystal while applying a current from said input electrode terminals to said Si single crystal and outputting from said output electrode terminals the voltage corresponding to the pressure of said high-temperature fluid which acts on the surface of said diaphragm.

Claim 20

A semiconductor pressure transducer for high-temperature fluid according to claim 17, wherein said diaphragm is provided in the vicinity of the central portion of the surface thereof with a protrusion which is engaged with a recessed portion provided at a block portion having a large heat capacity so as to secure said block portion to the surface of said diaphragm.

Claim 21

A semiconductor pressure transducer for high-temperature fluid according to claim 18, wherein said Si single crystal is so formed as to have an impurity density controlled in the range of 1×10 15 /cm 3 to 1×10 21 /cm 3 and a thickness of not more than 50 μm.

Claim 22

A semiconductor pressure transducer for high-temperature fluid according to claim 17, wherein said diaphragm is provided on the surface thereof with a threaded hole in the direction in which pressure is applied, and an adjust screw is engaged with said threaded hole so as to deform said diaphragm in the direction in which pressure is applied, thereby adjusting the compression force applied in advance to said pressure detector.

Claim 23

A semiconductor pressure transducer for high-temperature fluid according to claim 20, wherein said Si single crystal is so formed as to have an impurity density controlled in the range of 1×10 15 cm 3 to 1×10 21 /cm 3 and a thickness of not more than 50 μm.

Claim 24

A semiconductor pressure transducer for high-temperature fluid according to claim 17, wherein said Si single crystal is so formed as to have an impurity density controlled in the range of 1×10 15 /cm 3 to 1×10 21 /cm 3 and a thickness of not more than 50 μm.