Patent US3978751A successfully refreshed from Google Patents.
USH291H
Expired / Lapsed
US
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Fully ion implanted junction field effect transistor
Assignee: United States Department of the Navy
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Filing: 1986-05-07
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Granted: 1987-06-02
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Expires: 2006-05-07
Abstract
Abstract A method of making a planar junction field-effect transistor in which a semi-insulating substrate of a III-V semiconductor, particularly InP, is ion implanted by two ions to produce both an n-type region and a p-type region. The gate is further defined by selectively etching through the gate-implant region to the source/drain channel.
Inventors
- 👤 John B. Boos
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:49
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/051; H10D30/0512; H10D30/80; H10D30/83; H10D62/00; H10D62/10; H10D62/17; H10D62/343
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
134 words
A field-effect transistor, comprising: a residual substrate essentially consisting of semi-insulating InP; an active region essentially consisting of n-type InP doped with Si, the source end and drain end of which have a surface substantially co-planar with the surface of the residual substrate and which are connected by a source/drain channel part of said active region the upper surface of which is recessed below the surface of said source end and said drain end; a gate consisting of p-type InP doped with Be oerlaying a portion of said source/drain channel but not the entire source/drain channel and contacting said source/drain channel on only one side, a gate contact comprising Au-Zn overlaying said gate; a drain contact comprising eutectic AuGe overlaying said drain end; and a source contact comprising eutectic AuGe overlaying said source end.
Claim 2
Dependent Claim
134 words
A field-effect transistor, comprising: a residual substrate essentially consisting of semi-insulating InP; an active region essentially consisting of n-type InP doped with Si, the source end and drain end of which have a surface substantially co-planar with the surface of the residual substrate and which are connected by a source/drain channel part of said active region the upper surface of which is recessed below the surface of said source end and said drain end; a gate consisting of p-type InP doped with Be oerlaying a portion of said source/drain channel but not the entire source/drain channel and contacting said source/drain channel on only one side, a gate contact comprising Au-Zn overlaying said gate; a drain contact comprising eutectic AuGe overlaying said drain end; and a source contact comprising eutectic AuGe overlaying said source end.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-06-01 | 1990-12-01 | 1991-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-01 | 1994-12-01 | 1995-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-01 | 1998-12-01 | 1999-06-02 | $7700.00 | Window Closed / Lapsed |