US5178904A
Expired / Lapsed
US
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Process for forming deposited film from a group II through group VI metal hydrocarbon compound
Assignee: Canon Inc
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Filing: 1990-04-10
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Granted: 1993-01-12
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Expires: 2010-04-10
Abstract
Abstract A process for forming a deposited film on a substrate in the absence of a plasma is conducted by generating in an activation space an activated species capable of chemically reacting with a compound for film formation and introducing into a film-forming space having the substrate, the activated species and the compound for film formation. The compound for film formation has the general formula R n M m wherein R is a hydrocarbon radical, M is an element selected from one of Groups II-IV, n is an integer equal to the valence of M and m is a positive integer equal to the valence of R. The film-forming space is remote from the activation space. The activated species initiates a chemical reaction with the compound for film formation sufficient to generate chemical species of said film-forming compound capable of directly forming the deposited film.
Inventors
- 👤 Shunichi Ishihara
- 👤 Shigeru Ohno
- 👤 Masahiro Kanai
- 👤 Shunri Oda
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:11
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; B; B05; B05D; B05D7/00; B05D7/24
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
209 words
Process for forming a deposited film on a substrate in the absence of a plasma atmosphere which comprises: (a) generating in an activation space an activated species capable of promoting dissociation of a compound for film formation, said activated species being generated from at least one precursor selected from the group consisting of H 2 , HD, D 2 , He and Ar; and (b) introducing into a film forming space having said substrate, said activated species and said compound for film formation, said compound for film formation represented by the general formula: R.sub.n M.sup.1 m wherein R is a hydrocarbon radical, M 1 is an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd, Hg, Al, Ga, In, Tl, Ge, Sn, Pb, As, Sb, Bi, S, Se, and Te, n is an integer equal to the valence of M 1 and m is a positive integer equal to the valence of R; said film forming space being remote from said activation space; said activated species promoting dissociation of said compound for film formation sufficient to generate chemical species of said compound for film formation, said chemical species capable of directly forming said deposited film whereby said deposited film is formed on said substrate.
Claim 2
Dependent Claim
209 words
Process for forming a deposited film on a substrate in the absence of a plasma atmosphere which comprises: (a) generating in an activation space an activated species capable of promoting dissociation of a compound for film formation, said activated species being generated from at least one precursor selected from the group consisting of H 2 , HD, D 2 , He and Ar; and (b) introducing into a film forming space having said substrate, said activated species and said compound for film formation, said compound for film formation represented by the general formula: R.sub.n M.sup.1 m wherein R is a hydrocarbon radical, M 1 is an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd, Hg, Al, Ga, In, Tl, Ge, Sn, Pb, As, Sb, Bi, S, Se, and Te, n is an integer equal to the valence of M 1 and m is a positive integer equal to the valence of R; said film forming space being remote from said activation space; said activated species promoting dissociation of said compound for film formation sufficient to generate chemical species of said compound for film formation, said chemical species capable of directly forming said deposited film whereby said deposited film is formed on said substrate.
Claim 3
Dependent Claim
18 words
A process according to claim 1, wherein R is a hydrocarbon radical having 1 to 10 carbon atoms.
Claim 4
Dependent Claim
226 words
Process for forming a deposited film on a substrate in the absence of a plasma atmosphere which comprises: (a) generating in an activation space an activated species capable of chemically reacting with a compound for film formation, said activated species being generated from the group consisting of F 2 , Cl 2 , Br 2 , I 2 , BrF, ClF, ClF 3 , BrF 5 , BrF 7 , IF 5 , ICl, and IBr; and (b) introducing into a film forming space having said substrate, said activated species and said compound for film formation, said compound for film formation represented by the general formula: R.sub.n M.sup.2 m wherein R is a hydrocarbon radical, M 2 is an element selected from, the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd, Hg, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, S, Se, and Te, n is a positive integer equal to the valence of M 2 and m is a positive integer equal to the valence of R; said film forming space being remote from said activation space; said activated species initiating a chemical reaction with said compound for film formation sufficient to generate chemical species of said compound for film formation, said chemical species capable of directly forming said deposited film whereby said deposited film is formed on said substrate.
Claim 5
Dependent Claim
226 words
Process for forming a deposited film on a substrate in the absence of a plasma atmosphere which comprises: (a) generating in an activation space an activated species capable of chemically reacting with a compound for film formation, said activated species being generated from the group consisting of F 2 , Cl 2 , Br 2 , I 2 , BrF, ClF, ClF 3 , BrF 5 , BrF 7 , IF 5 , ICl, and IBr; and (b) introducing into a film forming space having said substrate, said activated species and said compound for film formation, said compound for film formation represented by the general formula: R.sub.n M.sup.2 m wherein R is a hydrocarbon radical, M 2 is an element selected from, the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd, Hg, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, S, Se, and Te, n is a positive integer equal to the valence of M 2 and m is a positive integer equal to the valence of R; said film forming space being remote from said activation space; said activated species initiating a chemical reaction with said compound for film formation sufficient to generate chemical species of said compound for film formation, said chemical species capable of directly forming said deposited film whereby said deposited film is formed on said substrate.
Claim 6
Dependent Claim
18 words
A process according to claim 3, wherein R is a hydrocarbon radical having 1 to 10 carbon atoms.
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