Patent US5177574A successfully refreshed from Google Patents.
US5177574A
Expired / Lapsed
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Semiconductor memory device having a stacked type capacitor and manufacturing method therefor
Assignee: Mitsubishi Electric Corp
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Filing: 1989-12-06
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Granted: 1993-01-05
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Expires: 2009-12-06
Abstract
Abstract A capacitor of a semiconductor memory device includes a planar type capacitor portion formed on a surface of an impurity region and a stacked type capacitor portion extending above the gate electrode. The stacked capacitor portion has a three-layer structure of polycrystalline silicon in which upper, lower and side surfaces of a lower electrode are surrounded by a dielectric layer and the upper electrode. A portion of a dielectric layer in the stacked capacitor portion is coupled to another dielectric layer formed on the surface of one impurity region. The capacitor has a planar type capacitor provided in the planar area of occupation of the stacked capacitor portion, whereby the capacitance of the capacitor can be increased without increasing the planar area of occupation.
Inventors
- 👤 Masahiro Yoneda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:04
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/318; H10B12/01; H10B12/02; H10B12/03; H10P; H10P14/00; H10P14/40; H10P14/416
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
304 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type having an insulating film for isolating elements formed on a prescribed region of a main surface of said semiconductor substrate; a pair of impurity regions of a second conductivity type formed spaced apart from each other by a prescribed distance on the main surface of said semiconductor substrate; a first conductive layer formed on the main surface of said semiconductor substrate positioned between said pair of impurity regions with a first insulating film positioned between said first conductive layer and said semiconductor substrate; a second conductive layer formed on a surface of said insulating film for isolating elements; second and third insulating films covering outer surfaces of said first and second conductive layers; a first electrode layer connected to one of said pair of impurity regions extending from a position above said second insulating film covering said first conductive layer to a position above said third insulating film covering said second conductive layer; a dielectric layer formed around said first electrode layer, and having a portion covering a surface of said impurity region to which said first electrode layer is connected; and a second electrode layer formed over, under and lateral to said dielectric layer; said dielectric layer comprising first and second portions sandwiched between said first and second electrode layers, and a third portion sandwiched between said second electrode layers and said impurity region, wherein said first and third portions of said dielectric layer are formed of different materials, and a portion of the first electrode layer, a part of said first portion of said dielectric layer, a portion of the second electrode layer and part of said second portion of said dielectric layer all extend in parallel to contact said second insulating film positioned over said first conductive layer.
Claim 2
Dependent Claim
304 words
A semiconductor memory device comprising: a semiconductor substrate of a first conductivity type having an insulating film for isolating elements formed on a prescribed region of a main surface of said semiconductor substrate; a pair of impurity regions of a second conductivity type formed spaced apart from each other by a prescribed distance on the main surface of said semiconductor substrate; a first conductive layer formed on the main surface of said semiconductor substrate positioned between said pair of impurity regions with a first insulating film positioned between said first conductive layer and said semiconductor substrate; a second conductive layer formed on a surface of said insulating film for isolating elements; second and third insulating films covering outer surfaces of said first and second conductive layers; a first electrode layer connected to one of said pair of impurity regions extending from a position above said second insulating film covering said first conductive layer to a position above said third insulating film covering said second conductive layer; a dielectric layer formed around said first electrode layer, and having a portion covering a surface of said impurity region to which said first electrode layer is connected; and a second electrode layer formed over, under and lateral to said dielectric layer; said dielectric layer comprising first and second portions sandwiched between said first and second electrode layers, and a third portion sandwiched between said second electrode layers and said impurity region, wherein said first and third portions of said dielectric layer are formed of different materials, and a portion of the first electrode layer, a part of said first portion of said dielectric layer, a portion of the second electrode layer and part of said second portion of said dielectric layer all extend in parallel to contact said second insulating film positioned over said first conductive layer.
Claim 3
Dependent Claim
37 words
A semiconductor memory device according to claim 1, wherein said portion of said second electrode layer comprises a first part and a second part, both in contact with said second insulating film and isolated from each other.
References Cited (Backward Citations)
US4888628A
Cited
US4700457A
Cited
US4742018A
Cited
EP0295709A2
Cited
US4974040A
Cited
US4953126A
Cited
JPH01154552A
Cited
US4899203A
Cited
US5006481A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-05 | 1996-07-06 | 1997-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-05 | 2000-07-06 | 2001-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-05 | 2004-07-06 | 2005-01-05 | $7700.00 | Window Closed / Lapsed |