Method of fabricating a semiconductor device by reducing the impurities

Claim 1

A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide layer on a surface of a semiconductor layer, the silicon oxide layer containing impurities; reducing the impurities in the silicon oxide layer at a first temperature; and diffusing the impurities in the silicon oxide layer into the surface of the semiconductor layer at a second temperature, wherein the first temperature is lower than the second temperature.

Claim 2

A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide layer on a surface of a semiconductor layer, the silicon oxide layer containing impurities; reducing the impurities in the silicon oxide layer at a first temperature; and diffusing the impurities in the silicon oxide layer into the surface of the semiconductor layer at a second temperature, wherein the first temperature is lower than the second temperature.

Claim 3

A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide layer on a surface of a semiconductor layer, the silicon oxide layer containing impurities; reducing the impurities in the silicon oxide layer at a first temperature; diffusing the impurities in the silicon oxide layer into the surface of the semiconductor layer at a second temperature; oxidizing any impurities remaining in the silicon oxide layer at a third temperature; and diffusing the impurities remaining in the silicon oxide layer into the surface of the semiconductor layer at the second temperature, wherein both the first temperature and the third temperature are lower than the second temperature.

Claim 4

A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide layer on a surface of a semiconductor layer, the silicon oxide layer containing impurities; reducing the impurities in the silicon oxide layer at a first temperature; diffusing the impurities in the silicon oxide layer into the surface of the semiconductor layer at a second temperature; oxidizing any impurities remaining in the silicon oxide layer at a third temperature; and diffusing the impurities remaining in the silicon oxide layer into the surface of the semiconductor layer at the second temperature, wherein both the first temperature and the third temperature are lower than the second temperature.

Claim 5

A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide layer on a surface of a semiconductor layer, the silicon oxide layer containing a plurality of types of impurities; reducing a specific type of the impurities in the silicon oxide layer at a first temperature; and diffusing the plurality of types of impurities in the silicon oxide layer into the surface of the semiconductor layer at a second temperature, wherein the first temperature is lower than the second temperature.

Claim 6

A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide layer on a surface of a semiconductor layer, the silicon oxide layer containing a plurality of types of impurities; reducing a specific type of the impurities in the silicon oxide layer at a first temperature; and diffusing the plurality of types of impurities in the silicon oxide layer into the surface of the semiconductor layer at a second temperature, wherein the first temperature is lower than the second temperature.

Claim 7

A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide layer on a surface of a semiconductor layer, the silicon oxide layer containing first and second types of impurities; exposing the silicon oxide layer to a reducing atmosphere and reducing the first type of impurity so as to bring the first type of impurity into a state difficult to diffuse; diffusing impurities other than the first type of impurity into the semiconductor layer; exposing the silicon oxide layer to an oxidizing atmosphere to oxidize the first type of impurity in the silicon oxide layer so as to return the first type of impurity into a state easy to diffuse; and diffusing the first and second types of impurities into the semiconductor layer.

Claim 8

A method of fabricating a semiconductor device, comprising the steps of: forming a silicon oxide layer on a surface of a semiconductor layer, the silicon oxide layer containing first and second types of impurities; exposing the silicon oxide layer to a reducing atmosphere and reducing the first type of impurity so as to bring the first type of impurity into a state difficult to diffuse; diffusing impurities other than the first type of impurity into the semiconductor layer; exposing the silicon oxide layer to an oxidizing atmosphere to oxidize the first type of impurity in the silicon oxide layer so as to return the first type of impurity into a state easy to diffuse; and diffusing the first and second types of impurities into the semiconductor layer.

Claim 10

A method of fabricating a semiconductor device, comprising the steps of: forming a first silicon oxide layer on a surface of a semiconductor layer, the first silicon oxide layer containing at least a first type of impurity; forming a second silicon oxide layer on the first silicon oxide layer, the second silicon oxide layer containing at least a second type of impurity; exposing the silicon oxide layers to a reducing atmosphere to reduce the first type of impurity so as to bring the first type of impurity into a state difficult to diffuse; diffusing impurities other than the first type of impurity into the semiconductor layer; exposing the silicon oxide layers to an oxidizing atmosphere to oxidize the first type of impurity in the silicon oxide layer so as to return the first type of impurity into a state easy to diffuse; and diffusing the first and second types of impurities into the semiconductor layer.

Claim 11

A method of fabricating a semiconductor device, comprising the steps of: forming a first silicon oxide layer on a surface of a semiconductor layer, the first silicon oxide layer containing at least a first type of impurity; forming a second silicon oxide layer on the first silicon oxide layer, the second silicon oxide layer containing at least a second type of impurity; exposing the silicon oxide layers to a reducing atmosphere to reduce the first type of impurity so as to bring the first type of impurity into a state difficult to diffuse; diffusing impurities other than the first type of impurity into the semiconductor layer; exposing the silicon oxide layers to an oxidizing atmosphere to oxidize the first type of impurity in the silicon oxide layer so as to return the first type of impurity into a state easy to diffuse; and diffusing the first and second types of impurities into the semiconductor layer.

Claim 12

A method of fabricating a MOSFET, comprising the steps of: forming a gate electrode on the surface of a substrate; forming a silicon oxide layer on the substrate such that the silicon oxide layer contacts regions designated for forming source and drain regions, the silicon oxide layer including first and second types of impurities of the same conductivity type; exposing the silicon oxide layer to a reducing atmosphere to reduce the first type of impurity so as to bring the first type of impurity into a state difficult to diffuse; diffusing the second type of impurity into the semiconductor layer; exposing the silicon oxide layer to an oxidizing atmosphere to oxidize the first type of impurity in the silicon oxide layer so as to return the first type of impurity to a state easy to diffuse; diffusing the first and second types of impurities into the semiconductor layer, thereby forming source and drain regions including a first diffusion layer containing the first and second types of impurities at a high density, and a second diffusion layer of the same conductivity type formed around the first diffusion layer and containing the first type of impurity at a low density.

Claim 13

A method of fabricating a MOSFET, comprising the steps of: forming a gate electrode on the surface of a substrate; forming a silicon oxide layer on the substrate such that the silicon oxide layer contacts regions designated for forming source and drain regions, the silicon oxide layer including first and second types of impurities of the same conductivity type; exposing the silicon oxide layer to a reducing atmosphere to reduce the first type of impurity so as to bring the first type of impurity into a state difficult to diffuse; diffusing the second type of impurity into the semiconductor layer; exposing the silicon oxide layer to an oxidizing atmosphere to oxidize the first type of impurity in the silicon oxide layer so as to return the first type of impurity to a state easy to diffuse; diffusing the first and second types of impurities into the semiconductor layer, thereby forming source and drain regions including a first diffusion layer containing the first and second types of impurities at a high density, and a second diffusion layer of the same conductivity type formed around the first diffusion layer and containing the first type of impurity at a low density.

Claim 14

A method of fabricating a semiconductor device of a trench type capacitor structure, comprising the steps of: forming a trench in the surface of a semiconductor substrate; forming on an inner wall of the trench a first silicon oxide layer containing at least a first type of impurity; forming a second silicon oxide layer on the first silicon oxide layer, the second silicon oxide layer containing at least a second type of impurity having a conductivity opposite that of the first type of impurity; exposing the first silicon oxide layer to a reducing atmosphere to reduce the first type of impurity in the first silicon oxide layer so as to bring the first type of impurity into a state difficult to diffuse; diffusing impurities other than the first type of impurity into the semiconductor layer; exposing the first silicon oxide layer to an oxidizing atmosphere to oxidize the first type of impurity in the first silicon oxide layer so as to return the first type of impurity to a state easy to diffuse; diffusing the first and second types of impurities into the semiconductor layer, thereby forming a trench type capacitor storage node comprising a first diffusion layer of one conductive type on the inner wall of the trench, which first diffusion layer includes the first type of impurity at a high density, and a second diffusion layer around the first diffusion layer, which second diffusion layer includes the second type of impurity; forming a capacitor insulating film on the storage node; and forming a plate electrode on the capacitor insulating film.

Claim 15

A method of fabricating a semiconductor device of a trench type capacitor structure, comprising the steps of: forming a trench in the surface of a semiconductor substrate; forming on an inner wall of the trench a first silicon oxide layer containing at least a first type of impurity; forming a second silicon oxide layer on the first silicon oxide layer, the second silicon oxide layer containing at least a second type of impurity having a conductivity opposite that of the first type of impurity; exposing the first silicon oxide layer to a reducing atmosphere to reduce the first type of impurity in the first silicon oxide layer so as to bring the first type of impurity into a state difficult to diffuse; diffusing impurities other than the first type of impurity into the semiconductor layer; exposing the first silicon oxide layer to an oxidizing atmosphere to oxidize the first type of impurity in the first silicon oxide layer so as to return the first type of impurity to a state easy to diffuse; diffusing the first and second types of impurities into the semiconductor layer, thereby forming a trench type capacitor storage node comprising a first diffusion layer of one conductive type on the inner wall of the trench, which first diffusion layer includes the first type of impurity at a high density, and a second diffusion layer around the first diffusion layer, which second diffusion layer includes the second type of impurity; forming a capacitor insulating film on the storage node; and forming a plate electrode on the capacitor insulating film.

Claim 21

A method of fabricating a semiconductor device according to any one of claims 4 and 5, wherein the first type of impurity is arsenic (As) and the second type of impurity is boron (B).

Claim 22

A method of fabricating a semiconductor device according to any one of claims 4 and 5, wherein the first type of impurity is antimony (Sb) and the second type of impurity is phosphorus (P).