US5155058A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductor memory device
Assignee: Canon Inc
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Filing: 1992-03-23
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Granted: 1992-10-13
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Expires: 2012-03-23
Abstract
Abstract A semiconductor memory device has plural first transistors constituting an information memory circuit and plural second transistors constituting gate units for controlling information input and output. The plural first transistors and the plural second transistors are formed in mutually overlaying structure across an insulating layer. A heterogeneous material of a nucleation density sufficiently higher than that of the insulating layer and of a size small enough to grow a single nucleus of a semiconductor material is formed on the insulating layer. The transistors positioned on the insulating layer are formed in a monocrystalline or substantially monocrystalline semiconductor layer grown around the single nucleus formed on the different material.
Inventors
- 👤 Shinji Fujiwara
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:28
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/276; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
155 words
A method for producing a semiconductor memory device comprising a first plurality of transistors constituting an information memory circuit and a second plurality of transistors constituting gate units for controlling information input to and output from the information memory circuit, the first plurality of transistors and the second plurality of transistors being formed in mutually overlying structure across an insulating layer, the method comprising forming either the first plurality of transistors or the second plurality of transistors by a process comprising the steps of: forming a first material, having a nucleation density sufficiently higher than that of the insulating layer, on the insulating layer in a sufficiently small area so as to form only a single nucleus from which a single crystal of a semiconductor material is grown; and growing a layer of monocrystalline semiconductor material, different from the first material, by a vapor phase process around a single nucleus grown from the first material.
Claim 2
Independent Claim
155 words
A method for producing a semiconductor memory device comprising a first plurality of transistors constituting an information memory circuit and a second plurality of transistors constituting gate units for controlling information input to and output from the information memory circuit, the first plurality of transistors and the second plurality of transistors being formed in mutually overlying structure across an insulating layer, the method comprising forming either the first plurality of transistors or the second plurality of transistors by a process comprising the steps of: forming a first material, having a nucleation density sufficiently higher than that of the insulating layer, on the insulating layer in a sufficiently small area so as to form only a single nucleus from which a single crystal of a semiconductor material is grown; and growing a layer of monocrystalline semiconductor material, different from the first material, by a vapor phase process around a single nucleus grown from the first material.
Claim 3
Dependent Claim
24 words
A method for producing a semiconductor memory device according to claim 1, wherein only the second plurality of transistors are formed by said process.
Claim 4
Independent Claim
125 words
A method for forming a semiconductor memory device comprising a first plurality of transistors constituting an information memory circuit and a second plurality of transistors constituting gate units for controlling information input to and output from said information memory circuit, said method comprising the steps of: forming an insulating layer on a substrate having said first plurality of transistors; forming a first material having a nucleation density sufficiently higher than that of said insulating layer in a small enough area so as to form only a single nucleus from which a single crystal of a semiconductor material is grown; and growing a layer of monocrystalline semiconductor material, different from said first material, by applying vapor deposition around a single nucleus grown from said first material.
Claim 5
Independent Claim
125 words
A method for forming a semiconductor memory device comprising a first plurality of transistors constituting an information memory circuit and a second plurality of transistors constituting gate units for controlling information input to and output from said information memory circuit, said method comprising the steps of: forming an insulating layer on a substrate having said first plurality of transistors; forming a first material having a nucleation density sufficiently higher than that of said insulating layer in a small enough area so as to form only a single nucleus from which a single crystal of a semiconductor material is grown; and growing a layer of monocrystalline semiconductor material, different from said first material, by applying vapor deposition around a single nucleus grown from said first material.
References Cited (Backward Citations)
US4517583A
Cited
US4498226A
Cited
US4489478A
Cited
US4500905A
Cited
JPS5856456A
Cited
US4596604A
Cited
US4768076A
Cited
JPS61180466A
Cited
JPS61180467A
Cited
US4805147A
Cited
US4751561A
Cited
US4685199A
Cited
US5070034A
Cited
US5028976A
Cited
US4800527A
Cited
US4999313A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-13 | 1996-04-13 | 1996-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-13 | 2000-04-13 | 2000-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-13 | 2004-04-13 | 2004-10-13 | $7700.00 | Window Closed / Lapsed |