US5144380A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diamond semiconductor device with a non-doped diamond thin film between a diamond active layer and a substrate
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1990-10-04
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Granted: 1992-09-01
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Expires: 2010-10-04
Abstract
Abstract A semiconductor device utilizing a nondoped diamond layer between a substrate and an active diamond layer. Such a structure decreases the resistivity and increases the carrier density. Further, when contacts are formed on the active layer, this layer structure reduces reverse leak current.
Inventors
- 👤 Tunenobu Kimoto
- 👤 Tadashi Tomikawa
- 👤 Nobuhiko Fujita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:34
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/80; H10D62/83; H10D62/8303; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2905; H10P14/2907; H10P14/2908; H10P14/2921; H10P14/2923; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3406; H10P14/3438; H10P14/3441; H10P14/3444
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
75 words
A semiconductor device comprising: a substrate; a non-doped diamond thin film formed directly on said substrate; a diamond active layer formed directly on the non-doped diamond thin film; and contacts formed directly on said diamond active layer; wherein said non-doped diamond thin film substantially reduces the influence of at least one of interface states and surface impurities upon the active layer, and wherein said non-doped diamond thin film insulates said active layer from said substrate.
Claim 2
Dependent Claim
75 words
A semiconductor device comprising: a substrate; a non-doped diamond thin film formed directly on said substrate; a diamond active layer formed directly on the non-doped diamond thin film; and contacts formed directly on said diamond active layer; wherein said non-doped diamond thin film substantially reduces the influence of at least one of interface states and surface impurities upon the active layer, and wherein said non-doped diamond thin film insulates said active layer from said substrate.
Claim 3
Dependent Claim
22 words
A semiconductor device as claimed in claim 1, wherein said non-doped diamond thin film has a thickness of at least 100 Å.
Claim 4
Dependent Claim
27 words
A semiconductor device as claimed in claim 1, wherein said non-doped diamond thin film has a thickness in the range of from 50 Å to 1000 Å.
Claim 5
Dependent Claim
15 words
A semiconductor device as claimed in claim 1, wherein said substrate is a Si substrate.
Claim 6
Dependent Claim
15 words
A semiconductor device as claimed in claim 1, wherein said substrate is a metal substrate.
Claim 7
Dependent Claim
19 words
A semiconductor device as claimed in claim 1, wherein said contact comprise an ohmic contact and a Schottky contact.
Claim 8
Dependent Claim
73 words
A semiconductor device comprising: a diamond substrate; a non-doped diamond thin film formed on said substrate; a diamond active layer formed on the non-doped diamond thin film; and contacts formed on said diamond active layer; wherein said non-doped diamond thin film substantially reduces the influence of at least one of interface states and surface impurities upon the active layer, and wherein said non-doped diamond thin film insulates said active layer from said substrate.
Claim 9
Dependent Claim
73 words
A semiconductor device comprising: a diamond substrate; a non-doped diamond thin film formed on said substrate; a diamond active layer formed on the non-doped diamond thin film; and contacts formed on said diamond active layer; wherein said non-doped diamond thin film substantially reduces the influence of at least one of interface states and surface impurities upon the active layer, and wherein said non-doped diamond thin film insulates said active layer from said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-09-01 | 1996-03-02 | 1996-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-09-01 | 2000-03-02 | 2000-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-09-01 | 2004-03-02 | 2004-09-01 | $7700.00 | Window Closed / Lapsed |