US4929986A
Expired / Lapsed
US
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High power diamond traveling wave amplifier
Assignee: United States Department of the Navy
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Filing: 1987-09-25
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Granted: 1990-05-29
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Expires: 2007-09-25
Abstract
Abstract An FET device especially useful in common gate amplifier circuits used as amplifiers of microwave and millimeter wave signals. The device has a diamond film layer constituting the device's channel. Device geometry is selected so that, in a common gate amplifier circuit, device input and output are impedance matched to avoid phase cancellation between input and output. In one embodiment a boron nitride layer is disposed heteroepitaxially with the diamond channel and separating the channel from the gate. In another embodiment plural such devices are yoked together integrally source to drain in such a manner that charge carriers entering the second and subsequent stages do so at maximum velocity without the need to accelerate from zero or low velocity. The resulting device has a higher power handling capacity, upper frequency range, and dynamic range.
Inventors
- 👤 Max N. Yoder
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:46
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10D30/00; H10D30/80; H10D30/87; H10D30/873
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
125 words
An FET device comprising one or more FET stages, each stage of said one or more stages comprising: a channel, a source, a gate and a drain formed in a single monolith; said each stage comprising an input portion comprised of said source and said gate, an output portion comprised of said drain and said gate, said input and said output portions having mirror image geometry with respect to one another; said mirror image geometry and the forming of said input portion and said output portion from said single monolith, being effective to make the phase velocity of electromagnetic signals propagating in said input portion and said output portion virtually identical; and said channel of said each stage is a diamond layer in said monolith.
Claim 2
Dependent Claim
125 words
An FET device comprising one or more FET stages, each stage of said one or more stages comprising: a channel, a source, a gate and a drain formed in a single monolith; said each stage comprising an input portion comprised of said source and said gate, an output portion comprised of said drain and said gate, said input and said output portions having mirror image geometry with respect to one another; said mirror image geometry and the forming of said input portion and said output portion from said single monolith, being effective to make the phase velocity of electromagnetic signals propagating in said input portion and said output portion virtually identical; and said channel of said each stage is a diamond layer in said monolith.
Claim 3
Dependent Claim
159 words
An FET device comprising one or more FET stages, each stage of said one or more stages comprising: a channel, a source, a gate and a drain formed in a single monolith; said each stage comprising an input portion comprised of said source and said gate, an output portion comprised of said drain and said gate, said input and said output portions having mirror image geometry with respect to one another; said mirror image geometry and the forming of said input portion and said output portion from said single monolith, being effective to make the phase velocity of electromagnetic signals propagating in said input portion and said output portion virtually identical; said channel of said each stage is a diamond layer in said monolith; wherein said device comprises a layer of boron nitride disposed between said diamond layer and said gate in said each stage, said diamond layer and said layer of boron nitride being heteroepitaxial with one another.
Claim 4
Dependent Claim
159 words
An FET device comprising one or more FET stages, each stage of said one or more stages comprising: a channel, a source, a gate and a drain formed in a single monolith; said each stage comprising an input portion comprised of said source and said gate, an output portion comprised of said drain and said gate, said input and said output portions having mirror image geometry with respect to one another; said mirror image geometry and the forming of said input portion and said output portion from said single monolith, being effective to make the phase velocity of electromagnetic signals propagating in said input portion and said output portion virtually identical; said channel of said each stage is a diamond layer in said monolith; wherein said device comprises a layer of boron nitride disposed between said diamond layer and said gate in said each stage, said diamond layer and said layer of boron nitride being heteroepitaxial with one another.
Claim 5
Dependent Claim
111 words
The device of claim 2 wherein said device comprises a insulating diamond substrate disposed adjacent to said layer of boron nitride and on the face of said layer of boron nitride opposite said diamond layer, and wherein said each gate is produced by the process comprising the steps of: etching a gate trench in said diamond substrate; allowing the difference in etchability between boron nitride and diamond to stop said etching at said layer of boron nitride, effective to expose a portion of said boron nitride; placing metal in said trench, said metal being in abutting contact, and electrical contact, with said portion of said boron nitride exposed by said etching.
Claim 6
Dependent Claim
54 words
The device of claim 3 wherein said one or more stages is a plurality of stages formed in said single monolith and integrally yoked together source to drain, and wherein, for said each stage of said plurality of stages, adjacent said sources and drains of sequential stages of said plurality of stages are unitary.
Claim 7
Dependent Claim
132 words
An FET device comprising one or more FET stages, each stage of said one or more stages comprising: a channel, a source, a gate and a drain formed in a single monolith; said each stage comprising an input portion comprised of said source and said gate, an output portion comprised of said drain and said gate, said input and said output portions having mirror image geometry with respect to one another; said mirror image geometry and the forming of said input portion and said output portion from said single monolith, being effective to make the phase velocity of electromagnetic signals of wavelength smaller than about one millimeter propagating in said input portion and said output portion virtually identical; and said channel of said each stage is a diamond layer in said monolith.
Claim 8
Dependent Claim
132 words
An FET device comprising one or more FET stages, each stage of said one or more stages comprising: a channel, a source, a gate and a drain formed in a single monolith; said each stage comprising an input portion comprised of said source and said gate, an output portion comprised of said drain and said gate, said input and said output portions having mirror image geometry with respect to one another; said mirror image geometry and the forming of said input portion and said output portion from said single monolith, being effective to make the phase velocity of electromagnetic signals of wavelength smaller than about one millimeter propagating in said input portion and said output portion virtually identical; and said channel of said each stage is a diamond layer in said monolith.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-28 | 1993-11-27 | 1994-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-28 | 1997-11-27 | 1998-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-28 | 2001-11-27 | 2002-05-29 | $7700.00 | Window Closed / Lapsed |