Thin film forming device

Abstract

Abstract PURPOSE:To obtain an alloy thin film at a high growing speed by a method wherein plasma is produced by utilizing the microwave discharge in a magnetic field, and the surface of a substrate in a high temperature atmosphere is irradiated. CONSTITUTION:A microwave at 2.45GH, several hundred W is generated by a magnetron 5 and then sent to a plasma chamber 12 impressed by the magnetic field by a wave guide 6. When the mixture gas of H2+CmHn is introduced from a chamber 8 to the chamber 12. The plasma of the mixture gas generates. A high temperature furnace 1 with the substrate 4 built in is connected down the plasma, an auxiliary coil 9 is provided outside of the furnace 1, and, thus guiding the plasma in the chamber to the furnace without loss. The use of H2+CH4 enables to synthesize a diamond thin film of high quality on an Si single crystal substrate 4 at a high speed. The addition of PH3 and B2H6 enables to obtain P type and N type semiconductor diamonds. Since a metallic electrode is not used, microwave discharge causes the extremely slight mixture of an impurity; besides, plasma electron temperature is high, and a hydrogen radical is efficiently generated; therefore the thin film of high quality can grow at a high speed.

Inventors

• 👤 Katsumi Tokikuchi
• 👤 登木口　克巳
• 👤 Kuniyuki Sakumichi
• 👤 訓之 作道
• 👤 Sumitaka Goto
• 👤 後藤　純孝
• 👤 Keizo Suzuki
• 👤 敬三 鈴木
• 👤 Takeshi Ninomiya
• 👤 健 二宮

Bibliographic Details