Quantum wire semiconductor laser

Claim 2

In a quantum wire semiconductor laser structure comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said at least one active quantum wire providing lightwave generation and propagation under lasing conditions, a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, and one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light.

Claim 3

In the quantum wire semiconductor laser structure of claim 1 wherein said at least one groove is V-shaped.

Claim 4

In the quantum wire semiconductor laser structure of claim 1 wherein said at least one groove is formed in said substrate, thereby said subsequent deposited first semiconductor layers forming grooves.

Claim 5

In the quantum wire semiconductor laser structure of claim 1 wherein said at least one groove is formed in one of said first semiconductor layers, thereby all of said subsequent deposited first semiconductor layers forming grooves.

Claim 6

In the quantum wire semiconductor laser structure of claim 1 wherein said at least one active quantum wire is of a low bandgap semiconductor material and said immediately adjacent semiconductor layers of said first semiconductor layers and said second semiconductor layers are of a high bandgap semiconductor material.

Claim 7

In the quantum wire semiconductor laser structure of claim 1 further comprising a current confinement stripe in said second semiconductor layers.

Claim 8

In the quantum wire semiconductor laser structure of claim 1 wherein said first semiconductor layers have a n-type conductivity and said second semiconductor layers have a p-type conductivity.

Claim 9

In a quantum wire semiconductor laser structure with a buried reverse bias junction comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light, and one of said second semiconductor layers being a quantum well layer having a doping content of opposite conductivity type relative to immediately adjacent semiconductor layers of said second semiconductor layers forming a reverse bias junction containing at least one current channel.

Claim 10

In a quantum wire semiconductor laser structure with a buried reverse bias junction comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light, and one of said second semiconductor layers being a quantum well layer having a doping content of opposite conductivity type relative to immediately adjacent semiconductor layers of said second semiconductor layers forming a reverse bias junction containing at least one current channel.

Claim 11

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 8 wherein said reverse bias junction and said immediately adjacent semiconductor layers of said second semiconductor layers form an optical waveguide.

Claim 12

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 9 wherein said optical wavequide is aligned with said at least one quantum wire.

Claim 13

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 9 wherein said optical waveguide is an index guide.

Claim 14

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 9 wherein said optical waveguide is an antiguiding structure.

Claim 15

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 8 wherein said first semiconductor layers have a n-type conductivity and said second semiconductor layers have a p-type conductivity.

Claim 16

In a quantum wire semiconductor laser structure with a buried reverse bias junction comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, one of said first semiconductor layers being a quantum well layer having a doping content of opposite conductivity type relative to immediately adjacent semicomductor layers of said first semiconductor layers forming a reverse bias junction containing at least one current channel, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, and a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, and one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light.

Claim 17

In a quantum wire semiconductor laser structure with a buried reverse bias junction comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, one of said first semiconductor layers being a quantum well layer having a doping content of opposite conductivity type relative to immediately adjacent semicomductor layers of said first semiconductor layers forming a reverse bias junction containing at least one current channel, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, and a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, and one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light.

Claim 18

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 14 wherein said reverse bias junction and said immediately adjacent semiconductor layers of said second semiconductor layers form an optical waveguide.

Claim 19

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 15 wherein said optical waveguide is aligned with said at least one quantum wire.

Claim 20

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 15 wherein said optical waveguide is an index guide.

Claim 21

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 15 wherein said optical waveguide is an antiguiding structure.

Claim 22

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 14 wherein said first semiconductor layers have a n-type conductivity and said second semiconductor layers have a p-type conductivity.

Claim 23

In a quantum wire semiconductor laser structure with a buried reverse bias junction comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, one of said first semiconductor layers being a quantum well layer having a doping content of opposite conductivity type relative to immediately adjacent semiconductor layers of said first semiconductor layers forming a first reverse bias junction containing at least one current channel, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-baising saidp-n junction causes said at least one quantum wire to emit light, and one of said second semiconductor layers being a quantum well layer having a doping content of opposite conductivity type relative to immediately adjacent semiconductor layers of said second semiconductor layers forming a second reverse bias junction containing at least one current channel.

Claim 24

In a quantum wire semiconductor laser structure with a buried reverse bias junction comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, one of said first semiconductor layers being a quantum well layer having a doping content of opposite conductivity type relative to immediately adjacent semiconductor layers of said first semiconductor layers forming a first reverse bias junction containing at least one current channel, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-baising saidp-n junction causes said at least one quantum wire to emit light, and one of said second semiconductor layers being a quantum well layer having a doping content of opposite conductivity type relative to immediately adjacent semiconductor layers of said second semiconductor layers forming a second reverse bias junction containing at least one current channel.

Claim 25

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 20 wherein said first or said second reverse bias junction and said immediately adjacent semiconductor layers form an optical waveguide.

Claim 26

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 21 wherein said optical waveguide is aligned with said at least one quantum wire.

Claim 27

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 21 wherein said optical waveguide is an index guide.

Claim 28

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 21 wherein said optical waveguide is antiguiding structure.

Claim 29

In the quantum wire semiconductor laser structure with a buried reverse bias junction of claim 20 wherein said first semiconductor layers have a n-type conductivity and said second semiconductor layers have a p-type conductivity.

Claim 30

In a quantum wire semiconductor laser structure with an optical waveguide comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light, and at least two disordered regions of opposing conductivity type to said second semiconductor layers extending at least partially through said second semiconductor layers and at least partially into said first semiconductor layers forming an optical waveguide between said disordered regions.

Claim 31

In a quantum wire semiconductor laser structure with an optical waveguide comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light, and at least two disordered regions of opposing conductivity type to said second semiconductor layers extending at least partially through said second semiconductor layers and at least partially into said first semiconductor layers forming an optical waveguide between said disordered regions.

Claim 32

In the quantum wire semiconductor laser structure with an optical waveguide of claim 26 wherein said optical waveguide is aligned with said at least one quantum wire.

Claim 33

In the quantum wire semiconductor laser structure with an optical waveguide of claim 26 wherein said first semiconductor layers have a n-type conductivity and said second semiconductor layers have a p-type conductivity.

Claim 34

In a multiple quantum wire semiconductor laser structure comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, at least one semiconductor barrier layer deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, at least one active quantum wire formed in the vertex of said immediately adjacent semiconductor layer of said at least one semiconductor barrier layer, and a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor barrier layer of said at least one semiconductor barrier layer, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, and one of said second semiconductor layers and one of said first semiconductor layers form a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light.

Claim 35

In a multiple quantum wire semiconductor laser structure comprising: a plurality of first semiconductor layers deposited on a substrate, said semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, at least one semiconductor barrier layer deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, at least one active quantum wire formed in the vertex of said immediately adjacent semiconductor layer of said at least one semiconductor barrier layer, and a plurality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor barrier layer of said at least one semiconductor barrier layer, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, and one of said second semiconductor layers and one of said first semiconductor layers form a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light.

Claim 36

In the multiple quantum wire semiconductor laser structure of claim 29 wherein said at least one groove is V-shaped.

Claim 37

In the multiple quantum wire semiconductor laser structure of claim 29 wherein said at least one active quantum wire is of a low bandgap semiconductor material and said immediately adjacent semiconductor layers are of a high bandgap semiconductor material.

Claim 38

In the multiple quantum wire semiconductor laser struture of claim 29 further comprising a current confinement stripe in said second semiconductor layers.

Claim 39

In the multiple quantum wire semiconductor laser structure of claim 29 wherein said first semiconductor layers have a n-type conductivity and said second semiconductor layers have a p-type conductivity.

Claim 40

In the multiple quantum wire semiconductor laser structure of claim 29 wherein said at least one groove in said first semiconductor layer or said substrate is aligned with said at least one grooves in said at least one barrier layer.

Claim 41

In a quantum wire semiconductor laser structure comprising: a plurality of first semiconductor layers deposited on a substrate, said first semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, a pluality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light, and at least two disordered regions of opposing conductivity type to said second semiconductor layers extending through said second semiconductor layers and partially into said first semiconductor layers bounding said at least one quantum wire forming an optical cavity between said disordered regions such that said lightwave generation and propagation under lasing conditions is perpendicular to said at least one quantum wire.

Claim 42

In a quantum wire semiconductor laser structure comprising: a plurality of first semiconductor layers deposited on a substrate, said first semiconductor layers and said substrate having the same conductivity type, at least one of said first semiconductor layers or said substrate having at least one groove, at least one active quantum wire formed in the vertex of at least one of said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said active quantum wire providing lightwave generation and propagation under lasing conditions, a pluality of second semiconductor layers deposited on said at least one active quantum wire in said at least one groove in said immediately adjacent semiconductor layer of said first semiconductor layers, said plurality of second semiconductor layers having an opposing conductivity type to said first semiconductor layers and said substrate, one of said second semiconductor layers and one of said first semiconductor layers forming a p-n junction, such that forward-biasing said p-n junction causes said at least one quantum wire to emit light, and at least two disordered regions of opposing conductivity type to said second semiconductor layers extending through said second semiconductor layers and partially into said first semiconductor layers bounding said at least one quantum wire forming an optical cavity between said disordered regions such that said lightwave generation and propagation under lasing conditions is perpendicular to said at least one quantum wire.

Claim 43

In the quantum wire semiconductor laser structure of claims 35 wherein said at least one active quantum wire is of a low bandgap semiconductor material and said immediately adjacent semiconductor layers are of a high bandgap semiconductor material.

Claim 44

In the quantum wire semiconductor laser structure of claim 35 further comprising a current confinement stripe in said second semiconductor layers.

Claim 45

In the quantum wire semiconductor laser structure of claim 35 wherein said first semiconductor layers have a n-type conductivity and said second semiconductor layers have a p-type conductivity.