US4675710A
Expired / Lapsed
US
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Light emitting semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1982-03-24
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Granted: 1987-06-23
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Expires: 2002-03-24
Abstract
Abstract An InGaAsP/InP light emitting semiconductor device which includes an active layer buried in a groove. A (111) B facet of the InP crystal, which is an inclined side plane of the groove, is exposed. The side edges of the InGaAsP active layer reach to the (111) B facet.
Inventors
- 👤 Hiroshi Ishikawa
- 👤 Nobuyuki Takagi
- 👤 Hajime Imai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:26
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H01S5/22; H01S5/2201; H01S5/223; H01S5/2237; H01S5/30; H01S5/32; H01S5/323; H01S5/3235; H01S5/32391; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; H10H20/81; H10H20/817; H10H20/819; H10H20/821
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
67 words
A light emitting semiconductor device comprising: a semiconductor substrate having a groove formed therein; an active layer formed in said groove in said semiconductor substrate, said active layer comprising InGaAsP and said semiconductor substrate comprising an InP crystal, said InP crystal having a (111) B facet forming an inclined side plane of said groove, the side edges of said active layer extending to said (111) B facet.
Claim 2
Dependent Claim
67 words
A light emitting semiconductor device comprising: a semiconductor substrate having a groove formed therein; an active layer formed in said groove in said semiconductor substrate, said active layer comprising InGaAsP and said semiconductor substrate comprising an InP crystal, said InP crystal having a (111) B facet forming an inclined side plane of said groove, the side edges of said active layer extending to said (111) B facet.
Claim 3
Dependent Claim
19 words
A light emitting semiconductor device according to claim 1, wherein a transverse section of said groove has a V-shape.
Claim 4
Dependent Claim
20 words
A light emitting semiconductor device according to claim 1, wherein a transverse section of said groove has a five-sided U-shape.
Claim 5
Dependent Claim
24 words
A light emitting semiconductor device according to claim 2, wherein an upper width of the opening of said groove is less than 4 μm.
Claim 6
Dependent Claim
38 words
A light emitting semiconductor device according to claim 1, 2 or 3, wherein said semiconductor substrate further comprises an n-type InP layer and wherein said InP crystal is a p-type InP layer formed on said n-type InP layer.
Claim 7
Dependent Claim
100 words
A light emitting semiconductor device having a substrate of InP, comprising: a current restriction layer formed on the substrate, having a stripe-shaped groove formed therein, said stripe-shaped groove reaching into the substrate and having inclined side planes of a (111) B facet of the InP; a clad layer having a first portion formed on said current restriction layer and having a second portion formed in said stripe-shaped groove; and an active layer of InGaAsP having a first portion formed on said first portion of said clad layer and a second portion formed on said second portion of said clad layer.
Claim 8
Dependent Claim
100 words
A light emitting semiconductor device having a substrate of InP, comprising: a current restriction layer formed on the substrate, having a stripe-shaped groove formed therein, said stripe-shaped groove reaching into the substrate and having inclined side planes of a (111) B facet of the InP; a clad layer having a first portion formed on said current restriction layer and having a second portion formed in said stripe-shaped groove; and an active layer of InGaAsP having a first portion formed on said first portion of said clad layer and a second portion formed on said second portion of said clad layer.
Claim 9
Dependent Claim
16 words
A light emitting semiconductor device according to claim 6, wherein said stripe-shaped groove has a V-shape.
Claim 10
Dependent Claim
18 words
A light emitting semiconductor device according to claim 6, wherein said stripe-shaped groove has a five sided U-shape.
Claim 11
Dependent Claim
17 words
A light emitting semiconductor device according to claim 6, wherein said current restriction layer comprises p-type InP.
References Cited (Backward Citations)
JPS523392A
Cited
JPS56158496A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-06-22 | 1990-12-22 | 1991-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-22 | 1994-12-22 | 1995-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-22 | 1998-12-22 | 1999-06-23 | $7700.00 | Window Closed / Lapsed |