Manufacture of injection type laser

Abstract

Abstract PURPOSE:To facilitate the manufacture of the injection type laser wherein a crescent shaped active region is embeded, by forming a dove tail shaped groove on a semiconductor substrate and reducing the decomposition of the crystal surface due to evaporation of P during the crystal growth. CONSTITUTION:On the top surfacd 105 of the N-InP substrate 1, N-InGaAsP 100, P-InP 200, and N-InGaAsP 300 are sequentially formed. The dove tail shaped groove is formed in the surface of the N-InGaAsP 300 by photo lithographic technique and selective etching technique. On the substrate 1 on which said groove is formed, are grown N-InP 2, P-InGaAsP 3, P-InP 4, and P-InGaAsP 5 by liquid phase epitaxial method. By forming the dove tail groove, the decomposition of the crystal surface due to the evaporation of P during the crystal growth is reduced, and the injection type laser wherein the crescent active region is embeded is constituted.

Inventors

• 👤 Wataru Suzaki
• 👤 Toshio Murotani
• 👤 Etsuji Omura
• 👤 Jun Ishii

Bibliographic Details