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US4723251A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor laser having an active layer buried in a groove

Assignee: Mitsubishi Electric Corp
•
Filing: 1985-10-24
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Granted: 1988-02-02
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Expires: 2005-10-24
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Abstract

Abstract A semiconductor laser device in which the thickness and position of an active layer grown in a groove are made more controllable. The inventive device includes a buffer layer of a first conductivity type formed on a semiconductor substrate of the same conductivity type, a first current blocking layer of a second conductivity type formed over the first buffer layer, the aforementioned groove being formed through the first and current blocking layer to the buffer layer, the active layer buried in the groove, and mesas formed on both side of the groove. With this structure, during crystal growth of the active layer, atoms which would otherwise diffuse into the groove and make it difficult to control the thickness and position of the active layer diffuse into portions outside the mesas and grow thereon.

Inventors

  • 👤 Yasushi Sakakibara
  • 👤 Hirofumi Namizaki
  • 👤 Etsuji Oomura
  • 👤 Hideyo Higuchi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 20:15
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H01S5/22; H01S5/223; H01S5/2237

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 103 words
A semiconductor laser comprising: a semiconductor substrate of a first conductivity type, a buffer layer of said first conductivity type formed on said substrate, a first current blocking layer of a second conductivity type formed on said buffer layer, a second current blocking layer of said first conductivity type formed on said first current blocking layer, a groove being formed through said second current blocking layer and said first current blocking layer to said buffer layer, an active layer buried in said groove, a mesa formed on each side of said groove, and means for applying a potential difference across said active layer.
Claim 2
Dependent Claim 103 words
A semiconductor laser comprising: a semiconductor substrate of a first conductivity type, a buffer layer of said first conductivity type formed on said substrate, a first current blocking layer of a second conductivity type formed on said buffer layer, a second current blocking layer of said first conductivity type formed on said first current blocking layer, a groove being formed through said second current blocking layer and said first current blocking layer to said buffer layer, an active layer buried in said groove, a mesa formed on each side of said groove, and means for applying a potential difference across said active layer.
Claim 3
Dependent Claim 22 words
The semiconductor laser as claimed in claim 1, wherein said mesa has a width in a range of 2 to 15 microns.
Claim 4
Dependent Claim 22 words
The semiconductor laser as claimed in claim 1, wherein said mesas are formed as at least parts of said current blocking layers.
Claim 5
Dependent Claim 21 words
The semiconductor laser as claimed in claim 3, wherein portions of said first current blocking layer extend outwardly beyond said mesas.
Claim 6
Dependent Claim 25 words
The semiconductor laser as claimed in claim 3, wherein all portions of said first and second current blocking layers outside of said mesas are removed.

References Cited (Backward Citations)

US4317085A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-02-01 1991-08-03 1992-02-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-02-01 1995-08-03 1996-02-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-02-01 1999-08-03 2000-02-02 $7700.00 Window Closed / Lapsed

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