Semiconductor laser device

Abstract

Abstract PURPOSE:To realize a semiconductor laser device capable of a lower threshold value with help of built-in waveguide effect attributable to the difference in effective refractive indexes by a method wherein two coating layers are formed, with the first coating layer provided with a refractive index higher than that of an clad layer and occupying the entire region except along the sides of a stripe-shaped groove and the second coating layer provided with a refractive index lower than that of the first coating layer. CONSTITUTION:On an n-GaAs substrate 21 of the facial orientation (100), a clad layer 22, undoped activation layer 23, p-clad layer 24, and n-GaAs current-impeding layer 25 are grown in that order. A photoresist 31 is placed on the current-impeding layer 25 by application, and a stripe-shaped window is provided. The current-impeding layer 25 is subjected to selective etching with the stripe-shaped window serving as a mask. Further, the clad layer 24 is exposed to etching until a stripe-shaped groove 32 is formed. On the entire surface, a first coating layer 26, second coating layer 27, and contact layer 28 are grown. On the contact layer 28, a Cr-Au electrode layer 29 is formed and, on the lower surface of the substrate 21, an Au-Ge electrode layer 30 is formed. An element obtained in this way operates on a threshold current that is as low as 35mA, and has an excellent differential.quantative efficiency of 50%.

Inventors

• 👤 Naoto Mogi
• 👤 茂木　直人
• 👤 Motoyuki Yamamoto
• 👤 山本　基幸
• 👤 Yukio Watanabe
• 👤 幸雄 渡辺

Bibliographic Details